Spatially resolved study of Schottkey barriers

Authors :: P. Perfetti
Antonio Cricenti
O. Bergossi
Renato Generosi
Tiziana dell’Orto
Carlo Coluzza
J. Almeida
Daniel Courjon
M. Spajer
Stephane Davy
Giancarlo Faini
Source :: SPIE Proceedings.
Publication Year :: 1996
Publisher :: SPIE, 1996.
Abstract: We studied the fully-formed (80 angstroms) Pt/GaP and (140 angstroms) Au/GaAs interfaces by scanning near-field optics microscopy, internal photoemission, atomic force microscopy, and by x-ray photoemission electron microscopy. These complementary techniques enabled us to correlate the spatial variations of the diodes transport properties with the chemical and topographic inhomogeneities of the buried metal-semiconductor interfaces.© (1996) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.