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It was recently demonstrated in the experiments [1,2] that the internal photoemission efficiency can reach several tens of percents because of "coherent" or, "surface" photoemission. In present work we provide theoretical description of this effect assuming the surface photoemissionin the structureconsisting ofthe Schottky-barrier metal-semiconductor interface with the Quantum Well (QW) inside. We take into account the difference of dielectric permittivities for the metal and the semiconductor which strongly affects the photoemission efficiency. We show that QW inside the Schottky-barrier can lead to (a) lowering the threshold energy of the photoemission due to resonance tunneling of electrons through the intermediate quasi-level of energy in QW; (b) the photoemission efficiency can be increased by several orders of magnitude.

Traditionally, the active material in a laser is modelled as independent emitters, but in recent years it has become increasingly clear that radiative coupling between emitters can significantly change the characteristics of small lasers. Collective effects in free space such as superradiance have been studied extensively [1,2], but the effects of inter-emitter correlation in micro- and nano-cavities need further examination to be put on firm theoretical ground. Several studies of collective effects in nano-cavities have been made [3-6], but the theoretical models employed are intricate, and numerical methods are needed both to generate the dynamic equations and to solve them. We propose a model where the complexity is strongly reduced, allowing analytical solutions [7]. We consider a collection of identical two-level emitters interacting with a single cavity mode. We start from Maxwell-Bloch equations, but instead of making the typical adiabatic elimination of the polarization, we allow the polarization decay rate to be of the same magnitude or smaller than other decay rates. Hence, the traditional laser rate equations for the photon number and the population inversion must be supplemented by equations for the emitter-field correlation and the emitter-emitter correlation. This gives us four generalized laser rate equations, which we solve analytically in steady state. Comparing with the steady state results obtained from the traditional laser rate equations we see that inclusion of collective effects leads to a reduction of the photon number for small pump rates, similarly to what is found in [4]. From the generalized laser rate equations, we derive a measure of the strength of collective effects in terms of laser parameters: This describes the difference between results with and without inter-emitter correlations, and it goes smoothly to zero as we approach parameter values where the traditional laser rate equations become valid. To gain insight into the photon statistics of the laser, we construct dynamic equations for higher order correlations of operators. We derive an analytical expression for the zero-delay photon auto-correlation function, and for low pump rates we find that the interaction of emitters results in super-thermal values of the auto-correlation. This feature is observed in experiments and numerical models [4-5], and with our analytical expressions, we are able to pinpoint the parameter combinations for which the collective effects have the largest impact. Considering the same model in terms of the Fourier components of the operators, we find results for the photon number that agree well with the previous approach, while allowing computation of the linewidth. Thus, we can examine how emitter-emitter correlation affects the line broadening of the laser.

We model output characteristics of the 1645 nm 8 mJ 10 ns 100 Hz Q-switched Er:YAG DPSSL. The laser is end pumped at a wavelength of 1532 nm. Fiber-coupled diode laser module was 10 nm FWHM, 12 W CW, 200 μm, NA 0.22. Various tapering of the active rod has been considered for 1 mm diameter, 20 mm long and 0.5% Er doping. We discuss the heat deposition process, the energy storage efficiency and the average power limitations for Q-switched regime of generation and amplification, and find the system scalable for the high power operation.

Electrically driven optical antennas are attracting much attention, in particular, due to necessity to develop integrated electrical source of surface plasmons for future plasmonic nanocircuitries. By default, this term denotes a metal nanostructure, in which electromagnetic oscillations at optical frequencies are excited by electrons, tunneling between metallic parts of the structure when a bias voltage is applied between them. Instead of relying on an inefficient inelastic light emission in a tunnel gap, we are suggesting to use ballistic nanoconstrictions as the feed element of an optical antennas in order to excite electromagnetic plasmonic modes. Similarly to tunneling structures, the voltage applied at the constriction falls over the contact of nanoscale length. Electron passing through the contact ballistically can gain the energy provided by the bias ~1eV and exchange it into an mode of the optical antenna. We discussed the underlying mechanisms responsible for the optical emission, and show that with nanoscale contact, one can reach quantum efficiency orders of magnitude larger than with standard tunneling structures.

Quantum emitters, such as q-dots and dye molecules, in the immediate vicinity of plasmonic nanostructures, resonantly excite surface plasmon-polaritons (SPPs) under incoherent pump. The efficiency in the excitation of SPPs per emitter increases with the number of the emitters, because the SPP field synchronizes emission of the coupled emitters, in analogy with the superadiance (SR) in free space. Using fully quantum mechanical model for two emitters coupled with a metal nanorod, we predict up to 15% increase in the emission yield of single emitter compared to only one emitter near the nanorod. Such emission enhancement is stationary and should be observable even with strong dissipation and dephasing under incoherent pump of emitters. Solid-state quantum emitters with blinking behaviors may be utilized to demonstrate such plasmonic SR emission enhancement. Plasmonic SR may find implications in the excitation of nonradiative modes in plasmonic waveguides, in lowing threshold of plasmonic nanolasers.

We control the optical comb in Nd:YVO 4 mode-locked lasers with intracavity frequency doubling based on KTP crystals via changing the cavity length and its dispersion properties and achieve high-purity radiofrequency (RF) signals. The laser output wavelength (532 nm) is in the range of the molecular iodine absorption spectrum with narrow (1.5 kHz) homogeneously broadened lines. We propose to stabilize the two longitudinal modes on two narrow iodine absorption lines. The third derivative of the absorption line could be obtained by heterodyning the absorption signal with the third harmonic of the modulation signal. The resulting RF error signal could be used to stabilize two locked longitudinal modes separated by 1.37 GHz which results in stabilized beat note signal.

We demonstrate a pulse-bursting phenomenon in Yb:Er glass laser operating at 1.54 μm. Glass-ceramic material with a low value of saturation threshold based on Co2+:β-ZnSiO4 nanocrystals was used as a passive gate for pulse-burst operation. The bursts of pulses were 1.5 ms long, each burst consisted of 40-55 pulses with 9-30 μJ energy per pulse and 0.2-3 μs pulse width. Bursting outputs arise via a coupling between slow switching arising via a slow pump modulation and fast pulsations resulting from Q-switch mechanism. We show that absorption cross-section strongly affects the mode of laser operation ranging from relaxation oscillations corresponding to low cross-section values to bursting and conventional Q-switch operation in the case of their higher values.

Photoelectric properties of metamaterials comprising asymmetrically shaped, similarly oriented metallic nanoparticles embedded in a homogeneous semiconductor matrix are theoretically and numerically studied. The asymmetric shape of the nanoparticles is found to result in the existence of a preferred direction where “hot” photoelectrons are emitted from the nanoparticle surface under the action of the localized plasmonic resonance excited in the nanoparticles. The resulting directional photocurrent flow occurring when nanoparticles are uniformly illuminated by a homogeneous plane wave is the direct analogy of the photogalvanic effect known to exist in naturally occurring non-centrosymmetric media. This plasmonic bulk photovoltaic effect is intermediate between the inner photoelectric effect in bulk media and the outer photoelectric effect at macroscopic interfaces. The results obtained are valuable for characterizing photoemission and photoconductive properties of plasmonic nanostructures. They can find many uses for photodetection-related and photovoltaic applications.

In order to improve the photoconversion efficiency, we consider the possibility of increasing the photocurrent in solar cells exploiting the electron photoemission from small metal nanoparticles into a semiconductor. The effect is caused by the absorption of photons and generation of local surface plasmons in the nanoparticles with optimized geometry. An electron photoemission from metal into semiconductor occurs if photon energy is larger than Schottky barrier at the metal-semiconductor interface. The photocurrent resulting from the absorption of photons with energy below the bandgap of the semiconductor added to the solar cell photocurrent can extend spectral response range of the device. We study the effect on a model system, which is a Schottky barrier n-GaAs solar cell, with an array of Au nanoparticles positioned at the interface between the semiconductor and the transparent top electrode. Based on the simulations, we chose to study disk-shaped Au nanoparticles with sizes ranging from 25nm to 50nm using electron beam lithography. Optical characterization of the fabricated devices shows the presence of LSP resonance around the wavelength of 1250nm, below the bandgap of GaAs.

Theoretically predicted "dipole lasing" as spontaneous excitation of coherent oscillations of dipole momentum of metal nano-particles placed inside or near the surface of the medium with optical amplification. It has close analogy with ordinary lasing, but the polarization of nano-particles stands for the optical cavity mode. Oscillations of polarization cause coherent radiation from nano-particles acting as "nano-antennas". Optical cavity is not necessary, so that the minimum size of the dipole laser can be on the nano-scale. Dipole laser frequency corresponds to the localized plasmon resonance of nano-particles. The manifestation of the dipole lasing is in the divergence of the nano-particle polarisability, that is a second-order phase transition. Threshold conditions, enhancement of the spontaneous emission and optical bistability is dipole lasers are found.

Ultrafast intraband carrier dynamics strongly influence many important characteristics in bulk and quantum well lasers and amplifiers through Spectral-Hole Burning (SHB) leading to nonlinear gain effects. In Quantum Dot (QD) devices, where the inter-level relaxation times can be even longer than the intraband relaxation times in conventional devices, SHB effects should also be substantial. A number of promising applications of QD amplifiers in high-speed optical processing (Cross-Gain Modulation, for instance) are based on features of the carrier dynamics in QD structures. In the present paper, based on a density matrix approach, we develop a theory of SHB-based nonlinear gain in QD lasers and amplifiers, which can affect such important characteristics as the modulation bandwidth in QD lasers and the saturation power and pulse energy in QD amplifiers. We give an expression for the nonlinear gain in QD devices, and show how it depends, particularly, on the capture/escape and relaxation/excitation rates.

We have developed a theory of the nonlinear refractive index in Quantum Dot (QD) Semiconductor Optical Amplifiers (SOAs) due to Spectral Hole Burning (SHB). Estimates show that this SHB nonlinear refractive index can be of order of 4x10 -16 m 2 /W that is by four orders higher than the nonlinear refractive index in silica, and offers the possibility of an efficient ultrafast Cross-Phase-Modulation (XPM) in QD SOAs. The opportunity of XPM without patterning effects via this refractive index nonlinearity is discussed. The Pattern-Effect-Free (PEF) XPM is possible in QD SOAs at high pumps, when maximal (constant) gain is achieved in SOAs, and the linear and nonlinear refractive indices also become independent of the total carrier density in the QD structure. In whole, use of the ultrafast refractive index nonlinearity in the regime of maximum gain in QD SOAs can lead to the development of a new generation of nonlinear interferometers for ultrafast optical switching.

We analyse the sensitivity of quantum dot semiconductor lasers to optical feedback. While bulk and quantum well semiconductor lasers are usually extremely unstable when submitted to back reflection, quantum dot semiconductor lasers exhibit a reduced sensitivity. Using a rate equation approach, we show that this behaviour is the result of a relatively low but nonzero line-width enhancement factor and strongly damped relaxation oscillations.

We have developed a theory of high-speed operation of quantum dot (QD) semiconductor optical amplifiers (SOAs), and showed that pattern-effect-free amplification of pulse trains, cross gain modulation (XGM) and cross phase modulation (XPM) can take place in QD SOA in the regime with maximum gain. Formulas, which relate the maximum bit-rate for the pattern-effect-free operation and the average SOA output power to the SOA pump current density, were derived. XGM without pattern effect can be realized in the regime with maximum gain due to spectral hole burning effects. Possibility of ultrafast frequency conversion and demultiplexing of data pulse streams through this nonlinearity is illustrated. Expression for the nonlinear refractive index η nl due to spectral hole burning in QD structure was obtained. The value of η nl in QD SOAs can be by 4-5 orders larger than η nl in silica; and efficient ultrafast XPM without pattern effects can be carried out in QD SOA through this nonlinearity. In whole, usage of the regime with maximum gain in QD SOAs can lead to development of new generation of high-speed devices for ultrafast optical processing and communications.

We analyse the sensitivity of quantum dot semiconductor lasers to optical. While bulk and quantum well semiconductor lasers are usually extremely unstable when submitted to back reflection, quantum dot semiconductor lasers exhibit a reduced sensitivity. Using a rate equation approach, we show that this behaviour is the result of a relatively low but nonzero line-width enhancement factor and of strongly damped relaxation oscillations.

The effects of carrier cooling on the saturation characteristics of quantum well absorbers are theoretically investigated. A comprehensive many-body model is employed, and both excitonic effects and bandgap renormalization are shown to play a significant role. The detailed interplay between band-filling and many-body effects at low carrier temperatures is shown to lead to saturation characteristics that are highly spectrally dependent, and that cannot in general be identified by a linear saturation characteristic. In addition, a spectral regime of enhanced fast saturation is identified at or slightly below the exciton peak energy, which may provide a mechanism for previously observed mode-locking behavior.

It is shown that a chemical oxygen-iodine laser (COIL) is a high power and highly efficient laser operated in a CW and a pulse-repetition regime. An active medium of this laser admits to realize a coherent amplification of high power pulses. Some features of the coherent amplification in such a medium and a feasible scheme of an experiment for obtaining of powerful pulses are considered.