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This paper presents an 8 × 8 channel optoelectronic readout array (ORA) realized in the TSMC 180 nm 1P6M RF CMOS process for the applications of short-range light detection and ranging (LiDAR) sensors. We propose several circuit techniques in this work, including an amplitude-to-voltage (A2V) converter that reduces the notorious walk errors by intensity compensation and a time-to-voltage (T2V) converter that acquires the linear slope of the output signals by exploiting a charging circuit, thus extending the input dynamic range significantly from 5 μApp to 1.1 mApp, i.e., 46.8 dB. These results correspond to the maximum detection range of 8.2 m via the action of the A2V converter and the minimum detection range of 56 cm with the aid of the proposed T2V converter. Optical measurements utilizing an 850 nm laser diode confirm that the proposed 8 × 8 ORA with 64 on-chip avalanche photodiodes (APDs) can successfully recover the narrow 5 ns light pulses even at the shortest distance of 56 cm. Hence, this work provides a potential CMOS solution for low-cost, low-power, short-range LiDAR sensors. [ABSTRACT FROM AUTHOR]

Photodetectors play a critical role in space lidars designed for scientific investigations from orbit around planetary bodies. The detectors must be highly sensitive due to the long range of measurements and tight constraints on the size, weight, and power of the instrument. The detectors must also be space radiation tolerant over multi-year mission lifetimes with no significant performance degradation. Early space lidars used diode-pumped Nd:YAG lasers with a single beam for range and atmospheric backscattering measurements at 1064 nm or its frequency harmonics. The photodetectors used were single-element photomultiplier tubes and infrared performance-enhanced silicon avalanche photodiodes. Space lidars have advanced to multiple beams for surface topographic mapping and active infrared spectroscopic measurements of atmospheric species and surface composition, which demand increased performance and new capabilities for lidar detectors. Higher sensitivity detectors are required so that multi-beam and multi-wavelength measurements can be performed without increasing the laser and instrument power. Pixelated photodetectors are needed so that a single detector assembly can be used for simultaneous multi-channel measurements. Photon-counting photodetectors are needed for active spectroscopy measurements from short-wave infrared to mid-wave infrared. HgCdTe avalanche photodiode arrays have emerged recently as a promising technology to fill these needs. This paper gives a review of the photodetectors used in past and present lidars and the development and outlook of HgCdTe APD arrays for future space lidars. [ABSTRACT FROM AUTHOR]

Detecting extremely low light signals is the basis of many scientific experiments and measurement techniques. For many years, a high-voltage photomultiplier has been the only practical device used in the visible and infrared spectral range. However, such a solution is subject to several inconveniences, including high production costs, the requirements of a supply voltage of several hundred volts, and a high susceptibility to mechanical damage. This paper presents two detection systems based on avalanche photodiodes, one cooled and the second operating at room temperature, in terms of their potential application in thermoluminescent dosimeter units. The results show that the detection system with an uncooled photodiode may successfully replace the photomultiplier tube commonly used in practice. [ABSTRACT FROM AUTHOR]

Optical biosensors have emerged as a powerful tool in analytical biochemistry, offering high sensitivity and specificity in the detection of various biomolecules. This article explores the advancements in the integration of optical biosensors with microfluidic technologies, creating lab-on-a-chip (LOC) platforms that enable rapid, efficient, and miniaturized analysis at the point of need. These LOC platforms leverage optical phenomena such as chemiluminescence and electrochemiluminescence to achieve real-time detection and quantification of analytes, making them ideal for applications in medical diagnostics, environmental monitoring, and food safety. Various optical detectors used for detecting chemiluminescence are reviewed, including single-point detectors such as photomultiplier tubes (PMT) and avalanche photodiodes (APD), and pixelated detectors such as charge-coupled devices (CCD) and complementary metal–oxide–semiconductor (CMOS) sensors. A significant advancement discussed in this review is the integration of optical biosensors with pixelated image sensors, particularly CMOS image sensors. These sensors provide numerous advantages over traditional single-point detectors, including high-resolution imaging, spatially resolved measurements, and the ability to simultaneously detect multiple analytes. Their compact size, low power consumption, and cost-effectiveness further enhance their suitability for portable and point-of-care diagnostic devices. In the future, the integration of machine learning algorithms with these technologies promises to enhance data analysis and interpretation, driving the development of more sophisticated, efficient, and accessible diagnostic tools for diverse applications. [ABSTRACT FROM AUTHOR]

Single-photon avalanche diodes (SPADs) belong to a family of avalanche photodiodes (APDs) with single-photon detection capability that operate above the breakdown voltage (i.e., Geiger mode). Design and technology constraints, such as dark current, photon detection probability, and power dissipation, impose inherent device limitations on avalanche photodiodes. Moreover, after the detection of a photon, SPADs require dead time for avalanche quenching and recharge before they can detect another photon. The reduction in dead time results in higher efficiency for photon detection in high-frequency applications. In this work, an electronic interface, based on the pole-zero compensation technique for reducing dead time, was investigated. A nanosecond pulse generator was designed and fabricated to generate pulses of comparable voltage to an avalanche transistor. The quenching time constant (τq) is not affected by the compensation capacitance variation, while an increase of about 30% in the τq is related to the properties of the specific op-amp used in the design. Conversely, the recovery time was observed to be strongly influenced by the compensation capacitance. Reductions in the recovery time, from 927.3 ns down to 57.6 ns and 9.8 ns, were observed when varying the compensation capacitance in the range of 5–0.1 pF. The experimental results from an SPAD combined with an electronic interface based on an avalanche transistor are in strong accordance, providing similar output pulses to those of an illuminated SPAD. [ABSTRACT FROM AUTHOR]

This paper presents a novel power-efficient topology for receivers in short-range LiDAR sensors. Conventionally, LiDAR sensors exploit complex time-to-digital converters (TDCs) for time-of-flight (ToF) distance measurements, thereby frequently leading to intricate circuit designs and persistent walk error issues. However, this work features a fully differential trans-impedance amplifier with on-chip avalanche photodiodes as optical detectors so that the need of the following post-amplifiers and output buffers can be eliminated, thus considerably reducing power consumption. Also, the combination of amplitude-to-voltage (A2V) and time-to-voltage (T2V) converters are exploited to replace the complicated TDC circuit. The A2V converter efficiently processes weak input photocurrents ranging from 1 to 50 μApp which corresponds to a maximum distance of 22.8 m, while the T2V converter handles relatively larger photocurrents from 40 μApp to 5.8 mApp for distances as short as 30 cm. The post-layout simulations confirm that the proposed LiDAR receiver can detect optical pulses over the range of 0.3 to 22.8 m with a low power dissipation of 10 mW from a single 1.8 V supply. This topology offers significant improvements in simplifying the receiver design and reducing the power consumption, providing a more efficient and accurate solution that is highly suitable for short-range LiDAR sensor applications. [ABSTRACT FROM AUTHOR]

Highly sensitive infrared photodetectors are needed in numerous sensing and imaging applications. In this paper, we report on extended short-wave infrared (e-SWIR) avalanche photodiodes (APDs) capable of operating at room temperature (RT). To extend the detection wavelength, the e-SWIR APD utilizes a higher indium (In) composition, specifically In0.3Ga0.7As0.25Sb0.75/GaSb heterostructures. The detection cut-off wavelength is successfully extended to 2.6 µm at RT, as verified by the Fourier Transform Infrared Spectrometer (FTIR) detection spectrum measurement at RT. The In0.3Ga0.7As0.25Sb0.75/GaSb heterostructures are lattice-matched to GaSb substrates, ensuring high material quality. The noise current at RT is analyzed and found to be the shot noise-limited at RT. The e-SWIR APD achieves a high multiplication gain of M ~ 190 at a low bias of V b i a s = −   2.5   V under illumination of a distributed feedback laser (DFB) with an emission wavelength of 2.3 µm. A high photoresponsivity of R > 140   A / W is also achieved at the low bias of V b i a s = − 2.5   V . This type of highly sensitive e-SWIR APD, with a high internal gain capable of RT operation, provides enabling technology for e-SWIR sensing and imaging while significantly reducing size, weight, and power consumption (SWaP). [ABSTRACT FROM AUTHOR]

Single photon emission tomography/computed tomography (SPECT/CT) is a mature imaging technology with a dynamic role in the diagnosis and monitoring of a wide array of diseases. This paper reviews the technological advances, clinical impact, and future directions of SPECT and SPECT/CT imaging. The focus of this review is on signal amplifier devices, detector materials, camera head and collimator designs, image reconstruction techniques, and quantitative methods. Bulky photomultiplier tubes (PMTs) are being replaced by position-sensitive PMTs (PSPMTs), avalanche photodiodes (APDs), and silicon PMs to achieve higher detection efficiency and improved energy resolution and spatial resolution. Most recently, new SPECT cameras have been designed for cardiac imaging. The new design involves using specialised collimators in conjunction with conventional sodium iodide detectors (NaI(Tl)) or an L-shaped camera head, which utilises semiconductor detector materials such as CdZnTe (CZT: cadmium–zinc–telluride). The clinical benefits of the new design include shorter scanning times, improved image quality, enhanced patient comfort, reduced claustrophobic effects, and decreased overall size, particularly in specialised clinical centres. These noticeable improvements are also attributed to the implementation of resolution-recovery iterative reconstructions. Immense efforts have been made to establish SPECT and SPECT/CT imaging as quantitative tools by incorporating camera-specific modelling. Moreover, this review includes clinical examples in oncology, neurology, cardiology, musculoskeletal, and infection, demonstrating the impact of these advancements on clinical practice in radiology and molecular imaging departments. [ABSTRACT FROM AUTHOR]

The nonlinear characteristics of avalanche photodiodes (APDs) inhibit their performance in high-speed communication systems, thereby limiting their widespread application as optical detectors. Existing theoretical models have not fully elucidated complex phenomena encountered in actual device structures. In this study, actual APD structures exhibiting lower linearity than their ideal counterparts were revealed. Simulation analysis and physical inference based on GaN APDs reveal that electrode size is a noteworthy factor influencing response linearity. This discovery expands the nonlinear theory of APDs, suggesting that APD linearity can be enhanced by suppressing the electrode size effect. A physical model was developed to explain this phenomenon, which is attributed to charge accumulation at the edge of the contact layer. Therefore, we proposed an improved APD design that incorporates an additional gap layer and a buffer layer to stabilize the internal gain under high-current-density conditions, thereby enhancing linearity. Our improved APD design increases the linear threshold for optical input power by 4.46 times. This study not only refines the theoretical model for APD linearity but also opens new pathways for improving the linearity of high-speed optoelectronic detectors. [ABSTRACT FROM AUTHOR]

The document "Advanced Nanomaterials in Biomedical Applications (2nd Edition)" explores the transformative role of nanotechnology in medicine, focusing on drug delivery systems, targeted imaging, regenerative medicine, and diagnostic tools. The Special Issue includes articles on innovative drug delivery strategies using polymeric microsponges, microconductometric sensors for ethanol detection, vaporization dynamics of perfluorocarbon nanodroplets, nanoparticle-based therapy for endometriosis, and advancements in silicon-based avalanche photodiodes for medical imaging. The research highlights the potential of nanomaterials to enhance therapeutic efficacy, improve patient outcomes, and revolutionize healthcare practices. [Extracted from the article]

Since the avalanche phenomenon was first found in bulk materials, avalanche photodiodes (APDs) have been exclusively investigated. Among the many devices that have been developed, silicon APDs stand out because of their low cost, performance stability, and compatibility with CMOS. However, the increasing industrial needs pose challenges for the fabrication cycle time and fabrication cost. In this work, we proposed an improved fabrication process for ultra-deep mesa-structured silicon APDs for photodetection in the visible and near-infrared wavelengths with improved performance and reduced costs. The improved process reduced the complexity through significantly reduced photolithography steps, e.g., half of the steps of the existing process. Additionally, single ion implantation was performed under low energy (lower than 30 keV) to further reduce the fabrication costs. Based on the improved ultra-concise process, a deep-mesa silicon APD with a 140 V breakdown voltage was obtained. The device exhibited a low capacitance of 500 fF, the measured rise time was 2.7 ns, and the reverse bias voltage was 55 V. Moreover, a high responsivity of 103 A/W@870 nm at 120 V was achieved, as well as a low dark current of 1 nA at punch-through voltage and a maximum gain exceeding 1000. [ABSTRACT FROM AUTHOR]

Avalanche photodiodes have emerged as a promising technology with significant potential for various medical applications. This article presents an overview of the advancements and applications of avalanche photodiodes in the field of medical imaging. Avalanche photodiodes offer distinct advantages over traditional photodetectors, including a higher responsivity, faster response times, and superior signal-to-noise ratios. These characteristics make avalanche photodiodes particularly suitable for medical-imaging modalities that require a high detection efficiency, excellent timing resolution, and enhanced spatial resolution. This review explores the key features of avalanche photodiodes, discusses their applications in medical-imaging techniques, and highlights the challenges and future prospects in utilizing avalanche photodiodes for medical purposes. Special attention is paid to the recent progress in silicon-compatible avalanche photodiodes. [ABSTRACT FROM AUTHOR]

In this work, we experimentally analyze the periodic oscillations that take place in staircase APDs with separate absorption and multiplication regions when operating under continuous laser light. These oscillations increase in frequency when the APD gain increases. We have verified that they are not affected by the parameters (gain and bandwidth) of the transimpedance amplifier, and thus originate inside the APD. The phenomenon is analyzed systematically by considering devices with different thicknesses of the absorption region. Possible physical interpretations related to the flux of holes generated by impact ionization are provided. [ABSTRACT FROM AUTHOR]

In this article, the performance and design considerations of the planar structure of germanium on silicon avalanche photodiodes are presented. The dependences of the breakdown voltage, gain, bandwidth, responsivity, and quantum efficiency on the reverse bias voltage for different doping concentrations and thicknesses of the absorption and multiplication layers of germanium on the silicon avalanche photodiode were simulated and analyzed. The study revealed that the gain of the avalanche photodiode is directly proportional to the thickness of the multiplication layer. However, a thicker multiplication layer was also associated with a higher breakdown voltage. The bandwidth of the device, on the other hand, was inversely proportional to the product of the absorption layer thickness and the carrier transit time. A thinner absorption layer offers a higher bandwidth, but it may compromise responsivity and quantum efficiency. In this study, the dependence of the photodetectors' operating characteristics on the doping concentration used for the multiplication and absorption layers is revealed for the first time. [ABSTRACT FROM AUTHOR]

Ge/Si separate absorption, charge, and multiplication avalanche photodiodes (SACM APDs) coupled with waveguides have shown significant potential as high-sensitivity, low-noise, and high-speed photodetectors for optical communications. In this study, we present a waveguide-integrated Ge/Si SACM APD fabricated on an eight-inch silicon photonics platform. The device exhibits a primary responsivity of 0.68 A/W at the unit gain voltage of 6 V for the O-band (1310 nm) wavelength, with a 10 μm-long and 1 μm-wide Ge layer. Additionally, the device demonstrates a 3 dB bandwidth of 25.7 GHz, with an input optical power of −16.8 dBm. The largest gain bandwidth product (GBP) is 247 GHz at a gain of 9.64 and a bias voltage of 15.7 V. The eye diagram is open at the bias voltage of 16 V, with a capacity to receive 28 Gbps of data. This APD shows potential for application in high-speed data transmission systems. [ABSTRACT FROM AUTHOR]

This paper presents three different types of on-chip avalanche photodiodes (APDs) realized in a TSMC 180 nm 1P6M RF CMOS process, i.e., a P+/N-well (NW) APD for its high responsivity and large bandwidth by excluding slow diffusion currents; a P+/Deep N-well (DNW) APD for its improved near-infrared (NIR) sensitivity; and a P+/NW/DNW APD for its capability to prevent premature edge breakdown and improve NIR sensitivity. Thereafter, a conventional voltage-mode optoelectronic receiver (V-OER) was realized to confirm the feasibility of the three on-chip APDs. However, the measured results of the V-OER demonstrate a very narrow dynamic range. Therefore, we propose a current-mode optoelectronic receiver (C-OER) realized in the same CMOS process for the applications of short-range LiDAR sensors, where current-conveyor input buffers are exploited to deliver the photocurrents with no significant signal loss to the following inverter cascode transimpedance amplifier, hence resulting in an extended dynamic range. The optically measured results of the C-OER with an 850 nm laser source demonstrate large output pulses. The C-OER chip consumes 47.8 mW from a 1.8 V supply and the core occupies 0.087 mm2. [ABSTRACT FROM AUTHOR]

Accurate detection of weak optical signals is a key function for a wide range of applications. A key performance parameter is the receiver signal-to-noise ratio, which depends on the noise of the photodetector and the following electrical circuitry. The circuit noise is typically larger than the noise of photodetectors that do not have internal gain. As a result, a detector that provides signal gain can achieve higher sensitivity. This is accomplished by increasing the photodetector gain until the noise associated with the gain mechanism is comparable to that of the output electrical circuit. For avalanche photodiodes (APDs), the noise that arises from the gain mechanism, impact ionization, increases with gain and depends on the material from which the APD is fabricated. Si APDs have established the state-of-the-art for low-noise gain for the past five decades. Recently, APDs fabricated from two Sb-based III-V compound quaternary materials, AlxIn1-xAsySb1-y and AlxGa1-xAsySb1-y, have achieved noise characteristics comparable to those of Si APDs with the added benefit that they can operate in the short-wave infrared (SWIR) and extended SWIR spectral regions. This paper describes the materials and device characteristics of these APDs and their performance in different spectral regions. [ABSTRACT FROM AUTHOR]

Conventional designs of an avalanche photodiode (APD) have been based on a planar p–n junction since the 1960s. APD developments have been driven by the necessity to provide a uniform electric field over the active junction area and to prevent edge breakdown by special measures. Most modern silicon photomultipliers (SiPM) are designed as an array of Geiger-mode APD cells based on planar p–n junctions. However, the planar design faces an inherent trade-off between photon detection efficiency and dynamic range due to loss of an active area at the cell edges. Non-planar designs of APDs and SiPMs have also been known since the development of spherical APDs (1968), metal-resistor-semiconductor APDs (1989), and micro-well APDs (2005). The recent development of tip avalanche photodiodes (2020) based on the spherical p–n junction eliminates the trade-off, outperforms the planar SiPMs in the photon detection efficiency, and opens new opportunities for SiPM improvements. Furthermore, the latest developments in APDs based on electric field-line crowding and charge-focusing topology with quasi-spherical p–n junctions (2019–2023) show promising functionality in linear and Geiger operating modes. This paper presents an overview of designs and performances of non-planar APDs and SiPMs. [ABSTRACT FROM AUTHOR]

Low-Gain Avalanche Diodes (LGAD) are a class of silicon sensors developed for the fast detection of Minimum Ionizing Particles (MIPs). The development was motivated by the need of resolving piled-up tracks of charged particles emerging from several vertexes originating from the same bunch-crossing in High-Energy Physics (HEP) collider experiments, which, however, are separated not only in space but also in time by a few tens of picoseconds. Built on thin silicon substrates and featuring an internal moderate gain, they provide fast signals for excellent timing performance, which are therefore useful to distinguish the different tracks. Unfortunately, this comes at the price of poor spatial resolution. To overcome this limitation, other families of LGAD-based silicon sensors which can deliver in the same substrate both excellent timing and spatial information are under development. Such devices are, to name a few, capacitively coupled LGADs (AC-LGAD), deep-junction LGADs (DJ-LGAD) and trench-isolated LGADs (TI-LGADs). These devices can be fabricated by even small-scale research-focused clean rooms for faster development within the scientific community. However, to scale up production, efforts towards integrating these sensor concepts in CMOS substrates, with the obvious advantage of the possibility of integrating part of the read-out electronics in the same substrate, have begun. [ABSTRACT FROM AUTHOR]

We report on the design of an attached guard ring (AGR) and a floating guard ring (FGR) in a planar separate absorption, grading, charge, and multiplication In0.53Ga0.47As/InP avalanche photodiode to prevent premature edge breakdowns. The depths of the two Zn diffusions were utilized to manipulate the guard ring structures. Results from TCAD simulation indicate that the optimal AGR diffusion depth is right at the turning point where the breakdown current shifts from the edge of active region to the AGR region. The devices with optimal AGR depth contain significantly higher breakdown voltages than those of devices either with shallower—or without any— AGR. For the FGR design, a series of devices with different spacings between AGR and FGR and different FGR opening widths for diffusion were fabricated and characterized. We show that when the spacing is longer than the critical value, the breakdown voltage can increase ~1.5 V higher than those of the APD devices without FGR. In addition, the wider the FGR opening width, the higher the breakdown voltage. TCAD simulations were also performed to study the effect of FGR, but showed less pronounced improvements, which could be due the discrepancy between the calculated and experimental diffusion profile. [ABSTRACT FROM AUTHOR]

Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology. [ABSTRACT FROM AUTHOR]

Free-running InGaAs/InP single-photon avalanche photodiodes (SPADs) typically operate in the active-quenching mode, facing the problems of long dead time and large timing jitter. In this paper, we demonstrate a 1-GHz gated InGaAs/InP SPAD with the sinusoidal gating signals asynchronous to the incident pulsed laser, enabling free-running single-photon detection. The photon-induced avalanche signals are quenched within 1 ns, efficiently reducing the SPAD's dead time and achieving a count rate of up to 500 Mcount/s. However, the timing jitter is measured to be ~168 ps, much larger than that of the SPAD with synchronous gates. We adjust the delay between the gating signals and the incident pulsed laser to simulate the random arrival of the photons, and record the timing jitter, respectively, to figure out the cause of the jitter deterioration. In addition, the effects of the incident laser power and working temperature of the APD on the time resolution have been investigated, broadening the applications of the GHz gated free-running SPAD in laser ranging and imaging, fluorescence spectroscopy detection and optical time-domain reflectometry. [ABSTRACT FROM AUTHOR]

We present the design of Ge/Si avalanche photodetectors with SiN stressor-induced Ge strain for the C+L band light detection. By optimizing the placement position and thickness of the SiN layer with compressive stress, a uniform strain distribution with a maximum magnitude of 0.59% was achieved in Ge. The surface-illuminated APDs have been studied in respect of the photo-dark current, responsivity, gain, and 3-dB bandwidth. After introducing SiN stressor, the APD exhibits high primary responsivity of 0.80 A/W at 1.55 μm, 0.72 A/W at 1.625 μm, and 3-dB bandwidth of 17.5 GHz. The increased tensile strain in Ge can significantly improve the responsivity and broaden the response band of the device. This work provides a constructive approach to realizing high-responsivity high-speed Ge/Si APD working in the C+L band. [ABSTRACT FROM AUTHOR]

Depth imaging using single-photon lidar (SPL) is crucial for long-range imaging and target recognition. Subtractive-dithered SPL breaks through the range limitation of the coarse timing resolution of the detector. Considering the weak signals at kilometer distances, we present a novel imaging method based on blending subtractive dither with a total variation image restoration algorithm. The spatial correlation is well-considered to obtain more accurate depth profile images with fewer signal photons. Subsequently, we demonstrate the subtractive dither measurement at ranges up to 1.8 km using an array of avalanche photodiodes (APDs) operating in the Geiger mode. Compared with the pixel-wise maximum-likelihood estimation, the proposed method reduces the depth error, which has great promise for high-depth resolution imaging at long-range imaging. [ABSTRACT FROM AUTHOR]

This paper introduces an indoor-monitoring LiDAR sensor for patients with Alzheimer disease residing in long-term care facilities (LTCFs), and this sensor exploits an optoelectronic analog front-end (AFE) to detect light signals from targets by utilizing on-chip avalanche photodiodes (APDs) realized in a 180 nm CMOS process and a neural processing unit (NPU) used for motion detection and decisions, especially for incidents of falls occurring in LTCFs. The AFE consists of an on-chip CMOS P+/N-well APD, a linear-mode transimpedance amplifier, a post-amplifier, and a time-to-digital converter, whereas the NPU exploits network sparsity and approximate processing elements for low-power operation. This work provides a potential solution of low-cost, low-power, indoor-monitoring LiDAR sensors for patients with Alzheimer disease in LTCFs. [ABSTRACT FROM AUTHOR]

With the rapid development of photo-communication technologies, avalanche photodiode (APD) will play an increasingly important role in the future due to its high quantum efficiency, low power consumption, and small size. The monolithic integration of optical components and signal processing electronics on silicon substrate chips is crucial to driving cost reduction and performance improvement; thus, the technical research on InGaAs/Si APD is of great significance. This work is the first to demonstrate the use of a photon-trapping (PT) structure to improve the performance of the InGaAs/Si APD based on an SOI substrate, which exhibits very high absorption efficiency at 1310 nm wavelength while the thickness of the absorption layer is kept at 800 nm. Based on the optical and electrical simulations, an optimized InGaAs/Si PT-APD is proposed, which exhibits a better performance and a higher responsivity compared to the original InGaAs/Si APD. [ABSTRACT FROM AUTHOR]

Data receiving frontends using avalanche photodiodes are used in optical free-space communications for their effective sensitivity, large detection area, and uncomplex operation. Precise control of the high voltage necessary to trigger the avalanche effect inside the photodiode depends on the semiconductor's excess noise factor, temperature, received signal power, background light, and also the subsequent thermal noise behavior of the transimpedance amplifier. Several prerequisites must be regarded and are explained in this document. We focus on the application of using avalanche photodiodes as data receivers for the on/off-keying of modulated bit streams with a 50% duty cycle. Also, experimental verification of the performance of the receiver with background light is demonstrated. [ABSTRACT FROM AUTHOR]

The high luminosity upgrade of the LHC (HL-LHC) at CERN will provide unprecedented instantaneous and integrated luminosities of up to 7.5 × 10 34 cm − 2 s − 1 and 4500 fb − 1 , respectively, from 2029 onwards. To cope with the extreme conditions of up to 200 collisions per bunch crossing, and increased data rates, the on- and off-detector electronics of the CMS electromagnetic calorimeter (ECAL) will be replaced. A dual gain trans-impedance amplifier and an ASIC providing two 160 MHz ADC channels, gain selection, and data compression will be used. The lead tungstate crystals and avalanche photodiodes (APDs) in the current ECAL will keep performing well and will therefore be maintained. The noise increase in the APDs, due to radiation-induced dark currents, will be minimised by reducing the ECAL operating temperature from 18 °C to around 9 °C. Prototype HL-LHC electronics have been tested and have shown promising results. In two test beam periods using the CERN SPS H4 beamline and an electron beam, the new electronics achieved the target energy resolution and a timing resolution consistent that is consistent with our requirements of 30 ps timing for energies greater than 50 GeV. [ABSTRACT FROM AUTHOR]

The current state of the art of single-photon detectors operating in the mid-infrared wavelength range is reported in this review. These devices are essential for a wide range of applications, such as mid-infrared quantum communications, sensing, and metrology, which require detectors with high detection efficiency, low dark count rates, and low dead times. The technological challenge of moving from the well-performing and commercially available near-infrared single-photon detectors to mid-infrared detection is discussed. Different approaches are explored, spanning from the stoichiometric or geometric engineering of a large variety of materials for infrared applications to the exploitation of alternative novel materials and the implementation of proper detection schemes. The three most promising solutions are described in detail: superconductive nanowires, avalanche photodiodes, and photovoltaic detectors. [ABSTRACT FROM AUTHOR]

In hard X-ray applications that require high detection efficiency and short response times, such as synchrotron radiation-based Mössbauer absorption spectroscopy and time-resolved fluorescence or photon beam position monitoring, III–V-compound semiconductors, and dedicated alloys offer some advantages over the Si-based technologies traditionally used in solid-state photodetectors. Amongst them, gallium arsenide (GaAs) is one of the most valuable materials thanks to its unique characteristics. At the same time, implementing charge-multiplication mechanisms within the sensor may become of critical importance in cases where the photogenerated signal needs an intrinsic amplification before being acquired by the front-end electronics, such as in the case of a very weak photon flux or when single-photon detection is required. Some GaAs-based avalanche photodiodes (APDs) were grown by a molecular beam epitaxy to fulfill these needs; by means of band gap engineering, we realised devices with separate absorption and multiplication region(s) (SAM), the latter featuring a so-called staircase structure to reduce the multiplication noise. This work reports on the experimental characterisations of gain, noise, and charge collection efficiencies of three series of GaAs APDs featuring different thicknesses of the absorption regions. These devices have been developed to investigate the role of such thicknesses and the presence of traps or defects at the metal–semiconductor interfaces responsible for charge loss, in order to lay the groundwork for the future development of very thick GaAs devices (thicker than 100 μ m) for hard X-rays. Several measurements were carried out on such devices with both lasers and synchrotron light sources, inducing photon absorption with X-ray microbeams at variable and controlled depths. In this way, we verified both the role of the thickness of the absorption region in the collection efficiency and the possibility of using the APDs without reaching the punch-through voltage, thus preventing the noise induced by charge multiplication in the absorption region. These devices, with thicknesses suitable for soft X-ray detection, have also shown good characteristics in terms of internal amplification and reduction of multiplication noise, in line with numerical simulations. [ABSTRACT FROM AUTHOR]

Highly sensitive ultraviolet (UV) photodetectors are highly desired for industrial and scientific applications. However, the responsivity of silicon photodiodes in the UV wavelength band is relatively low due to high-density Si/SiO2 interface states. In this paper, a coplanar avalanche photodiode (APD) was developed with a virtual guard ring design. When working in Geiger mode, it exhibited a strong UV response. The responsivity of 4 × 103 A/W (corresponding to a gain of 8 × 106) at 261 nm is measured under the incident power of 0.6 μW with an excess bias of 1.5 V. To the best of our knowledge, the maximum 3-dB bandwidth of 1.4 GHz is the first report ever for a Si APD when working in the Geiger mode in spite of the absence of an integrated CMOS read-out circuit. [ABSTRACT FROM AUTHOR]

A large-area, solid-state detector with single-hit precision timing measurement will enable several breakthrough experimental advances for the direct measurement of particles in space. Silicon microstrip detectors are the most promising candidate technology to instrument the large areas of the next-generation astroparticle space borne detectors that could meet the limitations on power consumption required by operations in space. We overview the novel experimental opportunities that could be enabled by the introduction of the timing measurement, concurrent with the accurate spatial and charge measurement, in Silicon microstrip tracking detectors, and we discuss the technological solutions and their readiness to enable the operations of large-area Silicon microstrip timing detectors in space. [ABSTRACT FROM AUTHOR]

Transducers, such as photodiodes, phototransistors, and photovoltaic cells are promising radiation detectors. However, for accurate radiation detection and dosimetry, signals that emanate from these devices have to be sufficient to facilitate accurate calibrations, i.e., assigning a quantity of radiation dose to a specific magnitude of the signal. More so, purposely fabricated for luminescence, LEDs produce significantly low signals during radiation detection applications. Therefore, this paper investigates the enhancement and augmentation of photovoltaic signals that were generated when LED strips were being exposed to diagnostic X-rays. Initially, signal amplification was achieved through increasing the effective LED active area (from 60 to 120 chips); by successively connecting LED strips. Further, signal amplification was undertaken by injecting the raw LED strip signal into an amplifier board with adjustable gains. In both the signal amplification techniques, the tube voltage (kVp), tube current-time product (mAs), and source-to-detector distance (SDD) were varied. The principal findings show that effective active area-based signal amplifications produced an overall average of 91.16% signal enhancement throughout all of the X-ray parameter variations. On the other hand, the amplifier board produced an average of 36.48% signal enhancement for the signals that were injected into it. Chip number increment-based signal amplifications had a 0.687% less coefficient of variation than amplifier board signal amplifications. The amplifier board signal amplifications were impaired by factors, such as dark currents, amplifier board maximum operational output voltage, and saturation. Therefore, future electronic signal amplification could use amplifier boards having low dark currents and high operational voltage headroom. The low-cost and simplicity that are associated with active-area amplification could be further exploited in a hybrid amplification technique with electronic amplification and scintillators. [ABSTRACT FROM AUTHOR]

This paper describes a fabrication process for realizing Indium-Phosphide-based photonic-integrated circuits (PICs) with a high level of integration to target a wide variety of optical applications. To show the diversity in PICs achievable with our open-access foundry process, we illustrate two examples: a fully-integrated 20 Gb/s dual-polarization electro-absorption-modulated laser, and a balanced detector composed of avalanche photodiodes for detection of 28 Gb/s optical signals. On another note, datacenters are increasingly relying on hybrid integration of PICs from different technology platforms to increase transmission capacity, while simultaneously lowering cost, size, and power consumption. Several technology platforms require surface coupling rather than the traditional edge coupling to couple the light from one PIC to another. To accommodate the surface-coupling approach in our integration platform, we have developed a strategy to transfer the following optical Input/Output devices into our fabrication process: grating couplers, and vertical mirrors. In addition, we introduced etched facets into the process to improve the usability of our edge-coupling elements. We believe that the additional flexibility in Input/Output interfacing combined with the integration of multiple devices onto one PIC to reduce the number of PIC-to-PIC alignments can contribute significantly to the development of compact, low-cost, and high-performance datacenter modules. [ABSTRACT FROM AUTHOR]

Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs) are particularly suitable for their high photon sensitivity and quantum efficiency in the UV region and for their inherent insensitivity to visible wavelengths. Challenges exist however for practical utilization. With growing interests in such photodetectors, hybrid readout solutions are becoming prevalent with CMOS technology being adopted for its maturity, scalability, and reliability. In this paper, we describe our approach to combine GaN APDs with a CMOS readout circuit, comprising of a linear array of 1 × 8 capacitive transimpedance amplifiers (CTIAs), implemented in a 0.35 µm high voltage CMOS technology. Further, we present a simple, yet sustainable circuit technique to allow operation of APDs under high reverse biases, up to ≈80 V with verified measurement results. The readout offers a conversion gain of 0.43 µV/e−, obtaining avalanche gains up to 103. Several parameters of the CTIA are discussed followed by a perspective on possible hybridization, exploiting the advantages of a 3D-stacked technology. [ABSTRACT FROM AUTHOR]

This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging. [ABSTRACT FROM AUTHOR]

A single-photon avalanche diode (SPAD) with enhanced near-infrared (NIR) sensitivity has been developed, based on 0.18 μm CMOS technology, for use in future automotive light detection and ranging (LIDAR) systems. The newly proposed SPAD operating in Geiger mode achieves a high NIR photon detection efficiency (PDE) without compromising the fill factor (FF) and a low breakdown voltage of approximately 20.5 V. These properties are obtained by employing two custom layers that are designed to provide a full-depletion layer with a high electric field profile. Experimental evaluation of the proposed SPAD reveals an FF of 33.1% and a PDE of 19.4% at 870 nm, which is the laser wavelength of our LIDAR system. The dark count rate (DCR) measurements shows that DCR levels of the proposed SPAD have a small effect on the ranging performance, even if the worst DCR (12.7 kcps) SPAD among the test samples is used. Furthermore, with an eye toward vehicle installations, the DCR is measured over a wide temperature range of 25–132 °C. The ranging experiment demonstrates that target distances are successfully measured in the distance range of 50–180 cm. [ABSTRACT FROM AUTHOR]

We present the design of Ge/Si avalanche photodetectors with SiN stressor-induced Ge strain for the C+L band light detection. By optimizing the placement position and thickness of the SiN layer with compressive stress, a uniform strain distribution with a maximum magnitude of 0.59% was achieved in Ge. The surface-illuminated APDs have been studied in respect of the photo-dark current, responsivity, gain, and 3-dB bandwidth. After introducing SiN stressor, the APD exhibits high primary responsivity of 0.80 A/W at 1.55 μm, 0.72 A/W at 1.625 μm, and 3-dB bandwidth of 17.5 GHz. The increased tensile strain in Ge can significantly improve the responsivity and broaden the response band of the device. This work provides a constructive approach to realizing high-responsivity high-speed Ge/Si APD working in the C+L band.

The long-term reliability of open-tube diffused planar InGaAs/InP APDs was investigated via accelerated life testing in this study. For the proposed life testing scheme, both thermal and electrical stresses were applied simultaneously to reduce the testing periods while maintaining statistical significance. Additionally, the Eyring model was used to extrapolate the activation energy. To determine the optimum life testing conditions, high-temperature storage tests, preliminary accelerated life tests, and main accelerated life tests were conducted. From the test results, the mean-time-to-failure was utilized to verify the suitability of the Eyring model. The proposed testing scheme, which utilizes a hybrid of accelerated stress factors, allows us to estimate the device reliability within an acceptable testing period, minimizing the time to market. [ABSTRACT FROM AUTHOR]

New equations for paralyzable, non paralyzable and hybrid DT models, valid for any time dependent sources are presented. We show how such new equations include the equations already used for constant rate sources, and how it's is possible to correct DT losses in the case of time dependent sources. Montecarlo simulations were performed to compare the equations behavior with the three DT models. Excellent accordance between equations predictions and Montecarlo simulation was found. We also obtain good results in the experimental validation of the new hybrid DT equation. Passive quenched SPAD device was chosen as a device affected by hybrid DT losses and active quenched SPAD with 50 ns DT was used as DT losses free device. [ABSTRACT FROM AUTHOR]

The trend related to reach the high operating temperature condition (HOT, temperature, T > 190 K) achieved by thermoelectric (TE) coolers has been observed in infrared (IR) technology recently. That is directly related to the attempts to reduce the IR detector size, weight, and power dissipation (SWaP) conditions. The room temperature avalanche photodiodes technology is well developed in short IR range (SWIR) while devices operating in mid-wavelength (MWIR) and long-wavelength (LWIR) require cooling to suppress dark current due to the low energy bandgap. The paper presents research on the potential application of the HgCdTe (100) oriented and HgCdTe (111)B heterostructures grown by metal-organic chemical vapor deposition (MOCVD) on GaAs substrates for the design of avalanche photodiodes (APDs) operating in the IR range up to 8 µm and under 2-stage TE cooling (T = 230 K). While HgCdTe band structure with molar composition xCd < 0.5 provides a very favorable hole-to-electron ionization coefficient ratio under avalanche conditions, resulting in increased gain without generating excess noise, the low level of background doping concentration and a low number of defects in the active layer is also required. HgCdTe (100) oriented layers exhibit better crystalline quality than HgCdTe (111)B grown on GaAs substrates, low dislocation density, and reduction of residual defects which contribute to a background doping within the range ~1014 cm–3. The fitting to the experimentally measured dark currents (at T = 230 K) of the N+-ν-p-P+ photodiodes commonly used as an APDs structure allowed to determine the material parameters. Experimentally extracted the mid-bandgap trap concentrations at the level of 2.5 × 1014 cm−3 and 1 × 1015 cm−3 for HgCdTe (100) and HgCdTe (111)B photodiode are reported respectively. HgCdTe (100) is better to provide high resistance, and consequently sufficient strength and uniform electric field distribution, as well as to avoid the tunneling current contribution at higher bias, which is a key issue in the proper operation of avalanche photodiodes. It was presented that HgCdTe (100) based N+-ν-p-P+ gain, M > 100 could be reached for reverse voltage > 5 V and excess noise factor F(M) assumes: 2.25 (active layer, xCd = 0.22, k = 0.04, M = 10) for λcut-off = 8 μm and T = 230 K. In addition the 4-TE cooled, 8 μm APDs performance was compared to the state-of-the-art for SWIR and MWIR APDs based mainly on III-V and HgCdTe materials (T = 77–300 K). [ABSTRACT FROM AUTHOR]

This review concentrates on the state-of-the-art hardware-oriented receiver aspects for optical wireless communication (OWC), and points to the importance of BER performance analysis and modeling in presence of non-perpendicular light incidence. Receivers in OWC networks for 6G applications have to work for strongly different light incidence angles, to allow the formation of connections to locally separated transceivers without the need for rotation units and accurate adjustment. In turn, and in combination with fully integrated optical receivers, reduction of cost and increased comfort can be achieved. Fully integrated [bipolar] complementary metal-oxide-semiconductor ([Bi]CMOS) receivers with on-chip avalanche photodiodes (APDs) and single-photon avalanche diodes (SPADs) are presented and their performance in optical wireless communication is summarized. Impressive data rates up to 2 Gbit/s and free-space transmission distances up to 27 m at bit error ratios (BER) below 10−9 are reached with linear-mode APD receivers. The importance of optical interference in the isolation and passivation stack on top of the integrated photodiodes is illuminated. To be able to predict the dependence of the BER of single-photon avalanche diode (SPAD) receivers on the light incidence angle, a model, which includes a model for the photon detection probability and a standing-wave model for the isolation and passivation stack, is extended. The dependence of the BER on the light incidence angle onto the photodiodes is investigated by electromagnetic simulation for optical transmission of the layers on top of the photodiode, device simulation for the avalanche triggering probability and BER modeling with MATLAB. It is found that incidence angles up to 30° have moderate influence on the BER and that the BER degrades significantly for incidence angles larger than 50°. [ABSTRACT FROM AUTHOR]

We experimentally studied the interaction between a millisecond pulse laser and silicon avalanche photodiode (Si-APD) in an external capacitance circuit. The temperature rise law of Si-APD irradiated by a millisecond pulse laser under different external capacitance conditions was obtained. The results show that the surface temperature rise in a Si-APD is strongly dependent on the external capacitance. That is, the smaller the external capacitance, the smaller the surface temperature rise. The effect of the external capacitance on the surface temperature rise in a Si-APD was investigated for the first time in the field of laser damage. The research results have a certain practical significance for the damage and protection of mid-infrared detectors. [ABSTRACT FROM AUTHOR]

We demonstrate low noise short wavelength infrared (SWIR) Sb-based type II superlattice (T2SL) avalanche photodiodes (APDs). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by molecular beam epitaxy on a GaSb substrate. At room temperature, the device exhibits a 50% cut-off wavelength of 1.74 µm. The device was revealed to have an electron-dominated avalanching mechanism with a gain value of 48 at room temperature. The electron and hole impact ionization coefficients were calculated and compared to give a better prospect of the performance of the device. Low excess noise, as characterized by a carrier ionization ratio of ~0.07, has been achieved. [ABSTRACT FROM AUTHOR]

Fast gating in Raman spectroscopy is used to reject the fluorescence contribution from the sample and/or the substrate. Several techniques have been set up in the last few decades aiming either to enhance the Raman signal (CARS, SERS or Resonant Raman scattering) or to cancel out the fluorescence contribution (SERDS), and a number of reviews have already been published on these sub-topics. However, for many reasons it is sometimes necessary to reject fluorescence in traditional Raman spectroscopy, and in the last few decades a variety of papers dealt with this issue, which is still challenging due to the time scales at stake (down to picoseconds). Fast gating (<1 ns) in the time domain allows one to cut off part of the fluorescence signal and retrieve the best Raman signal, depending on the fluorescence lifetime of the sample and laser pulse duration. In particular, three different techniques have been developed to accomplish this task: optical Kerr cells, intensified Charge Coupling Devices and systems based on Single Photon Avalanche Photodiodes. The utility of time domain fast gating will be discussed, and In this work, the utility of time domain fast gating is discussed, as well as the performances of the mentioned techniques as reported in literature. [ABSTRACT FROM AUTHOR]

In this work, we demonstrate In0.52Al0.48As top/backside-illuminated avalanche photodiodes (APD) with dual multiplication layers for high-speed and wide dynamic range performances. Our fabricated top-illuminated APDs, with a partially depleted p-type In0.53Ga0.47As absorber layer and thin In0.52Al0.48As dual multiplication (M-) layer (60 and 88 nm), exhibit a wide optical-to-electrical bandwidth (16 GHz) with high responsivity (2.5 A/W) under strong light illumination (around 1 mW). The measured bias dependent 3-dB O-E bandwidth was pinned at 16 GHz without any serious degradation near the saturation current output. To further increase the speed, we downscaled the active diameter and adopted a back-side illuminated structure with flip-chip bonding for batter optical alignment tolerance. A significant improvement in maximum bandwidth was demonstrated (25 versus 18 GHz). On the other hand, we adopted a thick dual M-layer (200 and 300 nm) and 2 μm absorber layer in the APD design to circumvent the problem of serious bandwidth degradation under high gain (>100) and high-power operation which significantly enhanced the dynamic range. Due to dual M-layer, the carriers could be energized in the first M-layer then propagate to the second M-layer to trigger the avalanche process. In both cases, despite variation in thickness of the absorber and M-layer, the cascade avalanche process leads to values close to the ultra-high gain bandwidth product (GBP) of around 460 GHz with a responsivity of 0.4 and 1 A/W at unit gain for the thin and thick M-layer devices, respectively. We successfully achieved a good sensitivity of around −20.6 dBm optical modulation amplitude (OMA) at a data rate of 25.78 Gb/s, by packaging the fabricated APDs (thin dual M-layer (60 and 88 nm) version) with a 25 Gb/s trans-impedance amplifier in a 100 Gb/s ROSA package. The results show that, the incorporation of a dual multiplication (M) layer structure in the APD opens a new window to obtaining the higher GBP in order to meet the requirements for high-speed transmission without the need of further downscaling the multiplication layer. [ABSTRACT FROM AUTHOR]

Laser time transfer is of great significance in timing and global time synchronization. However, the temperature drift may occur and affect the delay of the electronics system, optic generation and detection system. This paper proposes a post-processing method for the compensation of temperature-induced system delay, which does not require any changes to the hardware setup. The temperature drift and time stability of the whole system are compared with and without compensation. The results show that the propagation delay drift as high as 240 ps caused by temperature changes is compensated. The temperature drift coefficient was diminished down to ~0.05 ps/°C from ~20.0 ps/°C. The system precision was promoted to ~2 ps from ~11 ps over a time period of 80,000 s. This method performs significant compensation of single-photon laser time transfer system propagation drift and will help to establish an ultra-stable laser time transfer link in space applications. [ABSTRACT FROM AUTHOR]

High detection efficiency appears to be associated with a high afterpulse probability for InP-based single-photon avalanche diodes. In this paper, we present a new hybrid quenching technique that combines the advantages of both fast active quenching and high-frequency gated-passive quenching, with the aim of suppressing higher-order afterpulsing effects. Our results showed that the hybrid quenching method contributed to a 10% to 85% reduction of afterpulses with a gate-free detection efficiency of 4% to 10% at 1.06 μ m, with 40 ns dead time, compared with the counter-based hold-off method. With the improvement of the afterpulsing performance of high-frequency gated single-photon detectors, especially at relatively high average detection efficiencies with wide gate widths, the proposed method enables their use as high-performance free-running detectors. [ABSTRACT FROM AUTHOR]

We present an analysis of carrier dynamics of the single-photon detection process, i.e., from Geiger mode pulse generation to its quenching, in a single-photon avalanche diode (SPAD). The device is modeled by a parallel circuit of a SPAD and a capacitance representing both space charge accumulation inside the SPAD and parasitic components. The carrier dynamics inside the SPAD is described by time-dependent bipolar-coupled continuity equations (BCE). Numerical solutions of BCE show that the entire process completes within a few hundreds of picoseconds. More importantly, we find that the total amount of charges stored on the series capacitance gives rise to a voltage swing of the internal bias of SPAD twice of the excess bias voltage with respect to the breakdown voltage. This, in turn, gives a design methodology to control precisely generated charges and enables one to use SPADs as conventional photodiodes (PDs) in a four transistor pixel of a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) with short exposure time and without carrier overflow. Such operation is demonstrated by experiments with a 6 µm size 400 × 400 pixels SPAD-based CIS designed with this methodology. [ABSTRACT FROM AUTHOR]

Photodiode is one of the key components in optoelectronic technology, which is used to convert optical signal into electrical ones in modern communication systems. In this paper, an avalanche photodiode (APD) is designed and fulfilled, which is compatible with Taiwan Semiconductor Manufacturing Company (TSMC) 45-nm standard complementary metal–oxide–semiconductor (CMOS) technology without any process modification. The APD based on 45 nm process is beneficial to realize a smaller and more complex monolithically integrated optoelectronic chip. The fabricated CMOS APD operates at 850 nm wavelength optical communication. Its bandwidth can be as high as 8.4 GHz with 0.56 A/W responsivity at reverse bias of 20.8 V. Its active area is designed to be 20 × 20 μm2. The Simulation Program with Integrated Circuit Emphasis (SPICE) model of the APD is also proposed and verified. The key parameters are extracted based on its electrical, optical and frequency responses by parameter fitting. The device has wide potential application for optical communication systems. [ABSTRACT FROM AUTHOR]