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Design and Optimization of High-Responsivity High-Speed Ge/Si Avalanche Photodiode in the C+L Band.
- Source :
- Micromachines; Jan2023, Vol. 14 Issue 1, p108, 10p
- Publication Year :
- 2023
-
Abstract
- We present the design of Ge/Si avalanche photodetectors with SiN stressor-induced Ge strain for the C+L band light detection. By optimizing the placement position and thickness of the SiN layer with compressive stress, a uniform strain distribution with a maximum magnitude of 0.59% was achieved in Ge. The surface-illuminated APDs have been studied in respect of the photo-dark current, responsivity, gain, and 3-dB bandwidth. After introducing SiN stressor, the APD exhibits high primary responsivity of 0.80 A/W at 1.55 μm, 0.72 A/W at 1.625 μm, and 3-dB bandwidth of 17.5 GHz. The increased tensile strain in Ge can significantly improve the responsivity and broaden the response band of the device. This work provides a constructive approach to realizing high-responsivity high-speed Ge/Si APD working in the C+L band. [ABSTRACT FROM AUTHOR]
- Subjects :
- AVALANCHE photodiodes
PHOTODETECTORS
STRAINS & stresses (Mechanics)
BANDWIDTHS
Subjects
Details
- Language :
- English
- ISSN :
- 2072666X
- Volume :
- 14
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Micromachines
- Publication Type :
- Academic Journal
- Accession number :
- 161564040
- Full Text :
- https://doi.org/10.3390/mi14010108