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Clathrates are a materials class with an extremely low phonon thermal conductivity, which is a key ingredient for a high thermoelectric conversion efficiency. Here, we present a study on the type-I clathrate La 1.2 Ba 6.8 Au 5.8 Si 38.8 □ 1.4 directed at lowering the phonon thermal conductivity even further by forming mesoscopic wires out of it. Our hypothesis is that the interaction of the low-energy rattling modes of the guest atoms (La and Ba) with the acoustic modes, which originate mainly from the type-I clathrate framework (formed by Au and Si atoms, with some vacancies □), cuts off their dispersion and thereby tilts the balance of phonons relevant for thermal transport to long-wavelength ones. Thus, size effects are expected to set in at relatively long length scales. The structuring was carried out using a top-down approach, where the wires, ranging from 1260 nm to 630 nm in diameter, were cut from a piece of single crystal using a focused ion beam technique. Measurements of the thermal conductivity were performed with a self-heating 3 ω technique down to 80 K. Indeed, they reveal a reduction of the room-temperature phonon thermal conductivity by a sizable fraction of ∼40 % for our thinnest wire, thereby confirming our hypothesis. [ABSTRACT FROM AUTHOR]

With an attempt to improve the thermoelectric properties of type I clathrates in the Ba-Ga-Si system, we introduce Cu into the framework of the crystal structure. Single crystals are prepared in Ga-flux and characterized by X-ray diffraction techniques and transport measurements for the structural and thermoelectric properties. Our composition analyses show that only a small amount of Cu is determined in the clathrates. The single crystal X-ray diffraction data refinements confirm that Ga atoms prefer the 6c and 24k sites and avoid the 16i sites in the crystal structure. The small amount of Cu affects the crystal structure by compressing the tetrakaidecahedral cage along the direction perpendicular to the six-atom-ring plane. This could be the reason for the high charge carrier concentration, and low electrical resistivity and Seebeck coefficient. We analyze the principal mechanism for our observation and conclude that the Cu substitution can adjust some subtle details of the structure, maintaining the Zintl rule in the type I clathrates. [ABSTRACT FROM AUTHOR]

Thermoelectric materials are actively considered for waste heat recovery applications. To improve the heat to electricity conversion efficiency, fundamental understanding on composition, crystal structure, and interrelation with the thermoelectric properties is necessary. Here, we report the chemical and thermoelectric properties of type-I clathrates Ba 8 Ni 3.8 Si x Ge 42.2 − x (x = 0, 10, 20, 42.2), to show that the Si substitution can retain the low lattice thermal conductivity as in pure Ge-based clathrates by adding defects (cage distortion) scattering and/or alloying effect, and the charge carrier concentration can be optimized and thus the electronic properties can be improved by tailoring the vacancy content. We demonstrate the vacancies in the pure Ge-based compound by Rietveld refinement, and possible vacancies in the quaternary compound by transport property measurements. We also show that, for intrinsic property studies in these compounds with such a complex crystal structure, a heat treatment for as cast alloys is necessary for phase purity and composition homogeneity. The highest Z T value of 0.19 at 550 ° C is reached in the compound with x = 10 . [ABSTRACT FROM AUTHOR]

Thermoelectric materials are actively considered for waste heat recovery applications. To improve the heat to electricity conversion efficiency, fundamental understanding on composition, crystal structure, and interrelation with the thermoelectric properties is necessary. Here, we report the chemical and thermoelectric properties of type-I clathrates Ba 8 Ni 3.8 Si x Ge 42.2 - x ( x = 0, 10, 20, 42.2), to show that the Si substitution can retain the low lattice thermal conductivity as in pure Ge-based clathrates by adding defects (cage distortion) scattering and/or alloying effect, and the charge carrier concentration can be optimized and thus the electronic properties can be improved by tailoring the vacancy content. We demonstrate the vacancies in the pure Ge-based compound by Rietveld refinement, and possible vacancies in the quaternary compound by transport property measurements. We also show that, for intrinsic property studies in these compounds with such a complex crystal structure, a heat treatment for as cast alloys is necessary for phase purity and composition homogeneity. The highest Z T value of 0.19 at 550 ° C is reached in the compound with x = 10 .