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The influence of n-octylammonium iodide (OAI, passive layer) on the types of phases formed in a (MACl)0.33FA0.99MA0.01Pb(I0.99Br0.01)3 perovskite film was studied using X-ray diffraction. Using UV spectrophotometric techniques, it was determined how varied OAI additive layer ratios affected the linear and nonlinear optical characteristics of glass substrates/FTO/compact TiO2/mesoporous TiO2/(MACl)0.33FA0.99MA0.01Pb(I0.99Br0.01)3 films. All films' direct optical bandgap energies were determined to be 1.54 eV. The effects of OAI addition on the films' photoluminescence intensity and emitted colors were also investigated. For the fabricated perovskite solar cells (PSCs) without an OAI passivation layer, the corresponding power conversion efficiency (PCE), open-circuit voltage (VOC), short-circuit current density (JSC), and fill factor (FF) values were 18.8%, 1.02 V, 24.6 mAcm−2, and 75%, respectively. When the concentration of OAI reached 2 mg, the maximum obtained values of PCE, VOC, JSC, and FF were 20.2%, 1.06 V, 24.2 mAcm−2, and 79%, respectively. The decreased trap density and increased recombination resistance were responsible for the improvement in solar cell performance. [ABSTRACT FROM AUTHOR]

Iron (Fe) doped zinc sulfide (ZnS) nanoparticles were prepared by thermolysis with varying concentrations of iron. X-ray diffraction (XRD) results revealed the zinc blende cubic structure of ZnS. The effect of iron on lattice parameters such as crystallite size, micro strains, and dislocation density was examined. The defect chemistry inside the samples was analyzed by photoluminescence spectroscopy (PL). The variation in PL intensity introduced by doping can be used in optical applications. The optical parameters of nanostructures were investigated with different doping and the incorporation of Fe substitute for Zn ions using UV-Visible (UV-Vis). [ABSTRACT FROM AUTHOR]

The article presents the results of measuring the luminescence spectra and luminescence excitation spectra for YAG:Eu with europium concentrations of 2, 6, 8, and 10%. The materials were synthesized by solid-phase synthesis. For samples with europium concentrations of 2, 8, and 10%, the diffraction patterns showed full agreement with the phases. However, the yttrium–aluminum–perovskite phase was present in the sample with a concentration of 6%, even though the samples were obtained under the same conditions. The spectra of the photoluminescence excitation and photoluminescence were recorded for all samples. The concentration dependences of the luminescence bands and luminescence excitation bands were also plotted. The bandgap and absorption spectra were simulated for the sample of YAG:Eu, doped with 2–4 ions of europium for comparison. [ABSTRACT FROM AUTHOR]

Here we present comparative studies of: (i) the formation of ZnO thin films via the sol-gel method using zinc acetate dihydrate (ZAD), 2-methoxyethanol (ME) as solvent, and the aminoalcohols (AA): ethanolamine, (S)-(+)-2-amino-1-propanol, (S)-(+)-2-amino-3-methyl-1-butanol, 2-aminophenol, and aminobenzyl alcohol, and (ii) elemental analyses, infrared spectroscopy, X-ray diffraction, scanning electron microscopy, absorption and emission spectra of films obtained after deposition by drop coating on glass surface, and thermal treatments at 300, 400, 500 and 600 °C. The results obtained provide conclusive evidences of the influence of the AA used (aliphatic vs. aromatic) on the ink stability (prior to deposition), and on the composition, structures, morphologies, and properties of films after calcination, in particular, those due to the different substituents, H, Me, or iPr, and to the presence or the absence of a –CH2 unit. Aliphatic films, more stable and purer than aromatic ones, contained the ZnO wurtzite form for all annealing temperatures, while the cubic sphalerite (zinc-blende) form was also detected after using aromatic AAs. Films having frayed fibers or quartered layers or uniform yarns evolved to "neuron-like" patterns. UV and photoluminescence studies revealed that these AAs also affect the optical band gap, the structural defects, and photo-optical properties of the films. [ABSTRACT FROM AUTHOR]

In the present study, rough emerald single crystals and rough emeralds in the host rock from the ruins of Alexandria and from the Mount Zabargad in Egypt, preserved in the collection of the museum of the Ecole des Mines (Mines Paris—PSL) since the late 19th or early 20th century, are investigated. All samples were characterized by non-destructive spectroscopic and chemical methods during a week-long loan to the LFG. Raman, FTIR and UV-Vis-NIR spectroscopy revealed that Egyptian emeralds contain H2O molecules accompanied by relatively high concentrations of alkali ions and are colored by chromium and iron. Additionally, EDXRF showed that the emeralds from Egypt contain up to 84 ppm Rb and low amounts (below 200 ppm) of Cs. Inclusions and parts of the host rock were also observed under optical microscope and analyzed with Raman spectroscopy. Tube-like structures, quartz, calcite, dolomite, albite and phlogopite are associated minerals, and inclusions are identified in these historic emeralds from Egypt. This work will hopefully further contribute to the characterization of emeralds of archaeological significance. [ABSTRACT FROM AUTHOR]

Owing to its low resistivity, high transmittance, and tunable optical band gap, ZnO is of great interest for optoelectronic applications. Herein, the sol–gel technique was used to synthesize un-doped and zirconium-doped zinc oxide (ZZO) nanostructures with different concentrations of Zirconium (Zr). X-ray diffraction (XRD), scanning electron microscope (SEM), Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), UV-Vis spectroscopy, and photoluminescence (PL) measurements were used to investigate the influence of Zr doping on the structural, optical, and electrical properties of developed nanostructures. XRD and SEM confirmed the increase in crystallite size with increasing concentrations of Zr. Raman analysis indicated the presence of oxygen vacancies in synthesized nanostructures. UV-Vis spectroscopy illustrated the blue shift of band gap and red shift of the absorption edge for ZZO nanostructures with increasing concentrations of Zr. For the measurement of electrical properties, the spin-coating technique was used to deposit un-doped and Zr-doped ZnO layers of ~165 nm thickness. The four-probe-point (4PP) method illustrated that the doping of Zr caused a reduction in electrical resistance. Hall Effect measurements showed a high value, 3.78 × 1020 cm−3, of the carrier concentration and a low value, 10.2 cm2/Vs, of the carrier mobility for the Zr-doped layer. The high optical transmittance of ~80%, wide band gap of 3.51 eV, low electrical resistivity of 1.35 × 10−3 Ω·cm, and maximum carrier concentration of 3.78 × 1020 cm−3 make ZZO nanostructures one of the most promising candidates for the application of transparent conductive oxide (TCO) in optoelectronic devices. [ABSTRACT FROM AUTHOR]

The photoluminescence characteristics of films consisting of Si nanocrystals either coated with or embedded into Spin on Glass (SOG) were studied. Si nanocrystals showing red or blue luminescence when suspended in alcohol solution were obtained from porous silicon films. These were then either deposited in Si substrates and coated with SOG, or mixed in an SOG solution that was later spun on Si substrates. Both types of films were thermally annealed at 1100 °C for three hours in N2 atmosphere. Transmission electron microscopy measurements showed a mean diameter of 2.5 nm for the Si nanocrystals, as well as the presence of polycrystalline Si nanoagglomerates. These results were confirmed by X-ray diffraction studies, which revealed the (111), (220) and (311) Bragg peaks in Si nanocrystals. Fourier transform infrared spectroscopy studies showed that the coated films present higher chemical reactivity, promoting the formation of non-stoichiometric SiO2, while the embedded films behave as a stoichiometric SiO2 after the thermal annealing. The PL (photoluminescence) characterization showed that both embedded and coated films present emission dominated by the Quantum Confinement Effect before undergoing any thermal treatment. After annealing, the spectra were found to be modified only in the case of the coated films, due to the formation of defects in the nanocrystals/SiO2 interface. [ABSTRACT FROM AUTHOR]

Carbosilane dendrimers with 2-(2-phenyloxy)benzothiazole groups on the periphery were prepared from the 1st to the 7th generation. All dendrimers were characterized by 1H- and 13C-NMR, elemental analysis, MALDI TOF MS, GPC, and PL (photoluminescence) spectroscopy. Characteristic PDI (Polydisperse Index) values of the peaks corresponding to the respective dendrimers in the GPC data is in very narrow range of 1.00~1.04. All PL spectra show a blue-shift increasing with generation from the 1st to the 7th. [ABSTRACT FROM AUTHOR]

This study presented an analysis of the TeO2/GeO2 molar ratio in an oxide glass system. A family of melt-quenched glasses with the range of 0–35 mol% of GeO2 has been characterized by using DSC, Raman, MIR, refractive index, PLE, PL spectra, and time-resolved spectral measurements. The increase in the content of germanium oxide caused an increase in the transition temperature but a decrease in the refractive index. The photoluminescence spectra of europium ions were examined under the excitation of 465 nm, corresponding to 7F0 → 5D2 transition. The PSB (phonon sidebands) analysis was carried out to determine the phonon energy of the glass hosts. It was reported that the red (5D0 → 7F2) to orange (5D0 → 7F1) fluorescence intensity ratio for Eu3+ ions decreased from 4.49 (Te0Ge) to 3.33 (Te15Ge) and showed a constant increase from 4.58 (Te20Ge) to 4.88 (Te35Ge). These optical features were explained in structural studies, especially changes in the coordination of [4]Ge to [6]Ge. The most extended lifetime was reported for the Eu3+ doped glass with the highest content of GeO2. This glass was successfully used for the drawing of optical fiber. [ABSTRACT FROM AUTHOR]

We have investigated the electrical and optical properties of Cd0.9Zn0.1Te:(In,Pb) wafers obtained from the tip, middle, and tail of the same ingot grown by modified vertical Bridgman method using I-V measurement, Hall measurement, IR Transmittance, IR Microscopy and Photoluminescence (PL) spectroscopy. I-V results show that the resistivity of the tip, middle, and tail wafers are 1.8 × 1010, 1.21 × 109, and 1.2 × 1010 Ω·cm, respectively, reflecting native deep level defects dominating in tip and tail wafers for high resistivity compared to the middle part. Hall measurement shows the conductivity type changes from n at the tip to p at the tail in the growth direction. IR Transmittance for tail, middle, and tip is about 58.3%, 55.5%, and 54.1%, respectively. IR microscopy shows the density of Te/inclusions at tip, middle, and tail are 1 × 103, 6 × 102 and 15 × 103/cm2 respectively. Photoluminescence (PL) spectra reflect that neutral acceptor exciton (A0,X) and neutral donor exciton (D0,X) of tip and tail wafers have high intensity corresponding to their high resistivity compared to the middle wafer, which has resistivity a little lower. These types of materials have a large number of applications in radiation detection. [ABSTRACT FROM AUTHOR]

Cd1−xZnxTe (0 ≤ x ≤ 0.1) ingots were obtained by Bridgman's method using two different speeds in order to find the optimal conditions for single-crystalline growth. Crystalline quality was studied by chemical etching, the elemental composition by wavelength dispersive spectroscopy (WDS), tellurium (Te) precipitates/inclusions concentration by differential scanning calorimetry (DSC), optical transmission by Fourier transformed infrared spectrometry (FTIR), and band gap energy (Egap) by photoluminescence (PL). It was observed that the ingots grown at a lower speed were those of the best crystalline quality, having at most three grains of different crystallographic orientation. The average dislocations density in all of them were similar and correspond to materials of good quality. EPMA results indicated that the homogeneity in the composition was excellent in the ingots central part. The concentration of Te precipitates/inclusions in all ingots was below the instrument (DSC) detection limit, 0.25% wt/wt. In the case of wafers from Cd0.96Zn0.04Te and Cd0.90Zn0.10Te ingots, the optical transmission was better than that of commercial materials and varied between 60% and 70%, while for pure CdTe, the transmission range was between 50% and 55%, the latter being decreased by the presence of Te precipitates/inclusions. The band gap energy Eg of different wafers was experimentally obtained by PL measurements at 76 K. We observed that Eg increased with the Zn concentration of the wafers, following a linear regression comparable to those proposed in the literature, and consistent with the results obtained with other techniques. [ABSTRACT FROM AUTHOR]

This study presented an analysis of the TeO 2 /GeO 2 molar ratio in an oxide glass system. A family of melt-quenched glasses with the range of 0-35 mol% of GeO 2 has been characterized by using DSC, Raman, MIR, refractive index, PLE, PL spectra, and time-resolved spectral measurements. The increase in the content of germanium oxide caused an increase in the transition temperature but a decrease in the refractive index. The photoluminescence spectra of europium ions were examined under the excitation of 465 nm, corresponding to 7 F 0 → 5 D 2 transition. The PSB (phonon sidebands) analysis was carried out to determine the phonon energy of the glass hosts. It was reported that the red ( 5 D 0 → 7 F 2 ) to orange ( 5 D 0 → 7 F 1 ) fluorescence intensity ratio for Eu 3+ ions decreased from 4.49 (Te0Ge) to 3.33 (Te15Ge) and showed a constant increase from 4.58 (Te20Ge) to 4.88 (Te35Ge). These optical features were explained in structural studies, especially changes in the coordination of [4] Ge to [6] Ge. The most extended lifetime was reported for the Eu 3+ doped glass with the highest content of GeO 2 . This glass was successfully used for the drawing of optical fiber.

We developed silver-doped Cd1–xAgxO thin films (where x = 0, 0.01, 0.02, 0.03 and 0.04) on amorphous glass substrate by an automated nebulizer spray pyrolysis set-up. The XRD patterns show rock salt cubic crystal structures, and the crystallite sizes vary with respect to Ag doping concentrations. SEM images exhibited a uniform distribution of grains with the addition of Ag; this feature could support the enhancement of electron mobility. The transmittance spectra reveal that all films show high transmittance in the visible region with the observed bandgap of about 2.40 eV. The room temperature photoluminescence (PL) studies show the increase of near-band-edge (NBE) emission of the films prepared by different Ag doping levels, resulting in respective decreases in the bandgaps. The photodiode performance was analyzed for the fabricated p-Si/n-Cd1–xAgxO devices. The responsivity, external quantum efficiency and detectivity of the prepared p-Si/n-Cd1–xAgxO device were investigated. The repeatability of the optimum (3 at.% Ag) photodiode was also studied. The present investigation suggests that Cd1–xAgxO thin films are the potential candidates for various industrial and photodetector applications. [ABSTRACT FROM AUTHOR]

Copper oxide (CuxO) films are considered to be an attractive hole-transporting material (HTM) in the inverted planar heterojunction perovskite solar cells due to their unique optoelectronic properties, including intrinsic p-type conductivity, high mobility, low-thermal emittance, and energy band level matching with the perovskite (PS) material. In this study, the potential of reactive sputtered CuxO thin films with a thickness of around 100 nm has been extensively investigated as a promising HTM for effective and stable perovskite solar cells. The as-deposited and annealed films have been characterized by using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Photoluminescence (PL), UV-Vis spectroscopy, and Hall-effect measurement techniques. The significant change in structural and optoelectronic properties has been observed as an impact of the thermal annealing process. The phase conversion from Cu2O to CuO, including grain size increment, was observed upon thermal annealing. The transmittance and optical bandgap were found to vary with the films' crystallographic transformation. The predominant p-type conductivity and optimum annealing time for higher mobility have been confirmed from the Hall measurement. Films' optoelectrical properties were implemented in the complete perovskite solar cell for numerical analysis. The simulation results show that a 40 min annealed CuxO film yields the highest efficiency of 22.56% with a maximum open-circuit voltage of 1.06 V. [ABSTRACT FROM AUTHOR]

Tetragonal Er0.5Nb0.5O2 and monoclinic ErNbO4 micro- and nanoparticles were prepared by the citrate sol–gel method and heat-treated at temperatures between 700 and 1600 °C. ErNbO4 revealed a spherical-shaped crystallite, whose size increased with heat treatment temperatures. To assess their optical properties at room temperature (RT), a thorough spectroscopic study was conducted. RT photoluminescence (PL) spectroscopy revealed that Er3+ optical activation was achieved in all samples. The photoluminescence spectra show the green/yellow 2H11/2, 4S3/2→4I15/2 and red 4F9/2→4I15/2 intraionic transitions as the main visible recombination, with the number of the crystal field splitting Er3+ multiplets reflecting the ion site symmetry in the crystalline phases. PL excitation allows the identification of Er3+ high-energy excited multiplets as the preferential population paths of the emitting levels. Independently of the crystalline structure, the intensity ratio between the green/yellow and red intraionic transitions was found to be strongly sensitive to the excitation energy. After pumping the samples with a resonant excitation into the 4G11/2 excited multiplet, a green/yellow transition stronger than the red one was observed, whereas the reverse occurred for higher excitation photon energies. Thus, a controllable selective excited tunable green to red color was achieved, which endows new opportunities for photonic and optoelectronic applications. [ABSTRACT FROM AUTHOR]

Ba2SiO4−δN2/3δ:Eu2+ (BSON:Eu2+) materials with different N3− contents were successfully prepared and characterized. Rietveld refinements showed that N3− ions were partially substituted for the O2− ions in the SiO4-tetrahedra because the bond lengths of Si‒(O,N) (average value = 1.689 Å) were slightly elongated compared with those of Si‒O (average value = 1.659 Å), which resulted in the minute compression of the Ba(2)‒O bond lengths from 2.832 to 2.810 Å. The average N3− contents of BSON:Eu2+ phosphors were determined from 100 nm to 2000 nm depth of grain using a secondary ion mass spectrometry (SIMS): 0.064 (synthesized using 100% α-Si3N4), 0.035 (using 50% α-Si3N4 and 50% SiO2), and 0.000 (using 100% SiO2). Infrared (IR) and X-ray photoelectron spectroscopy (XPS) measurements corroborated the Rietveld refinements: the new IR mode at 850 cm−1 (Si‒N stretching vibration) and the binding energy at 98.6 eV (Si-2p) due to the N3- substitution. Furthermore, in UV-region, the absorbance of N3−-substituted BSON:Eu2+ (synthesized using 100% α-Si3N4) phosphor was about two times higher than that of BSO:Eu2+ (using 100% SiO2). Owing to the N3− substitution, surprisingly, the photoluminescence (PL) and LED-PL intensity of BSON:Eu2+ (synthesized using 100% α-Si3N4) was about 5.0 times as high as that of BSO:Eu2+ (using 100% SiO2). The compressive strain estimated by the Williamson−Hall (W−H) method, was slightly increased with the higher N3− content in the host-lattice of Ba2SiO4, which warranted that the N3- ion plays an important role in the highly enhanced PL intensity of BSON:Eu2+ phosphor. These phosphor materials could be a bridgehead for developing new phosphors and application in white NUV-LEDs field. [ABSTRACT FROM AUTHOR]

This work is focused on making a correlation between results obtained by using spectroscopy and microscopy techniques from single and twofold-layer Silicon-Rich Oxide (SRO) films. SRO films single-layer and twofold-layer characterizations were compared considering the conditions as-grown and with thermal treatment at 1100 °C for 60 min in a nitrogen atmosphere. The thickness of the single-layer film is 324.7 nm while for the twofold-layer film it is 613.2 nm; after heat-treated, both thicknesses decreased until 28.8 nm. X-ray Photoelectron Spectroscopy shows changes in the excess-silicon in single-layer SRO films, with 10% in as-grown films and decreases to 5% for the heat-treated films. Fourier Transform Infrared Spectroscopy (FTIR) exhibits three characteristic vibrational modes of SiO2, as well as, the vibrating modes associated with the Si-H bonds, which disappear after the heat treatment. With UV–Vis spectroscopy results we obtained the absorbance and the absorption coefficient for the SRO films in order to calculate the optical bandgap energy (Egopt), which increased with heat-treatment. The energy peaks of the photoluminescence spectra were used to calculate the silicon nanocrystal size, obtaining thus an average size of 1.89 ± 0.32 nm for the as-grown layer, decreasing the size to 1.64 ± 0.01 nm with the thermal treatment. On the other hand, scanning electron microscopy and high-resolution transmission electron microscopy images confirm the thickness of the twofold-layer SRO films as 628 nm for the as-grown layer and 540 nm for the layer with heat-treatment, and the silicon nanocrystal size of 2.3 ± 0.6 nm for the films with thermal treatment. [ABSTRACT FROM AUTHOR]

In this work, we used the chemical vapor transport (CVT) method to grow PbI2 crystals using iodine as a self-transporting agent. The crystals' structure, composition, and uniformity were confirmed by X-ray diffraction (XRD) and electron probe microanalysis (EPMA) measurements. We investigated the band gap energy using absorption spectroscopy measurements. Furthermore, we explored the temperature dependence of the band gap energy, which shifts from 2.346 eV at 300 K to 2.487 eV at 20 K, and extracted the temperature coefficients. A prototype photodetector with a lateral metal–semiconductor–metal (MSM) configuration was fabricated to evaluate its photoelectric properties using a photoconductivity spectrum (PC) and persistent photoconductivity (PPC) experiments. The resonance-like PC peak indicates the excitonic transition in absorption. The photoresponse ILight/IDark-1 is up to 200%. [ABSTRACT FROM AUTHOR]

The present study applied LA–ICP-MS on gem-quality emeralds from the most important sources (Afghanistan, Brazil, Colombia, Ethiopia, Madagascar, Russia, Zambia and Zimbabwe). It revealed that emeralds from Afghanistan, Brazil, Colombia and Madagascar have a relatively lower lithium content (7Li < 200 ppmw) compared to emeralds from other places (7Li > 250 ppmw). Alkali element contents as well as scandium, manganese, cobalt, nickel, zinc and gallium can further help us in obtaining accurate origin information for these emeralds. UV-Vis spectroscopy can aid in the separation of emeralds from Colombia and Afghanistan from these obtained from the other sources as the latter present pronounced iron-related bands. Intense Type-II water vibrations are observed in the infrared spectra of emeralds from Madagascar, Zambia and Zimbabwe, as well as in some samples from Afghanistan and Ethiopia, which contain higher alkali contents. A band at 2818 cm−1, supposedly attributed to chlorine, was observed only in emeralds from Colombia and Afghanistan. Samples with medium to high alkalis from Ethiopia, Madagascar, Zambia and Zimbabwe can also be separated from the others by Raman spectroscopy based on the lower or equal relative intensity of the Type I water band at around 3608 cm−1 compared to the Type II water band at around 3598 cm−1 band (with some samples from Afghanistan, Brazil and Russia presenting equal relative intensities). [ABSTRACT FROM AUTHOR]

The juice sacs of pummelo fruit is susceptible to softening during storage at 25 °C, which causes quality deterioration and flavor loss during postharvest pummelo storage. This study investigated the changes in metabolisms of antioxidant and cell wall in juice sacs of three pummelo cultivars—Hongroumiyou (HR), Bairoumiyou (BR) and Huangroumiyou (HuR)—during postharvest storage. The results revealed that, with the extension of storage, the juice sacs of three pummelo cultivars exhibited a decrease in total antioxidant capacity (TAC), DPPH and ABTS radical scavenging activity; a decline in total phenols (TP) content and an increase firstly then a decrease in total ascorbic acid (TAA) content; and a decrease in lipoxygenase (LOX) activity and a rise initially, but a decline in activities of ascorbate peroxidase (APX) and glutathione peroxidase (GPX). Additionally, increased water-soluble pectin (WSP), but declined propectin, ionic-soluble pectin (ISP) and chelator-soluble pectin (CSP); as well as an increase from 0 d to 60 d then followed by a decline in activities of pectinesterase (PE), polygalacturonase (PG) and pectate lyase (PL) were observed. These results suggested that the metabolisms of antioxidant and cell wall could result in softening and senescence of pummelo fruit. [ABSTRACT FROM AUTHOR]

Copper from a solid source was diffused into undoped n-type bulk ZnO (001) single crystals at 1000 °C under a nitrogen atmosphere at different diffusion times. The Cu diffusion profiles were obtained by Secondary ion mass spectroscopy (SIMS), and the fitting reveals a diffusion case from a constant concentration source. A value for the diffusion coefficient of 2.42(±0.2) × 10−12 cm2∙s−1 was obtained. Electrical measurements present an increment of carrier concentration with diffusion time, but remains n-type which indicates an increase in the donor levels produced by structural defects in ZnO. Photoluminescence (PL) spectra showed an increment of green emission intensity associated with Cu incorporation. [ABSTRACT FROM AUTHOR]

In this study the effects of 1-Octadecanethiol (ODT, 1-CH3 [CH2]17SH) passivation on GaAs (100) surface and GaAs/Al2O3 MOS capacitors are investigated. The results measured by X-ray photoelectric spectroscopy (XPS), Raman spectroscopy and scan electron microscopy (SEM) show that the ODT passivation can obviously suppress the formation of As-O bonds and Ga-O bonds on the GaAs surface and produce good surface morphology at the same time, and especially provide better protection against environmental degradation for at least 24 h. The passivation time is optimized by photoluminescence (PL), and the maximum enhancement of PL intensity was 116%. Finally, electrical property of a lower leakage current was measured using the metal-oxide-semiconductor capacitor (MOSCAP) method. The results confirm the effectiveness of ODT passivation on GaAs (100) surface. [ABSTRACT FROM AUTHOR]