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2H MoTe2 (molybdenum ditelluride) has generated significant interest because of its superconducting, nonvolatile memory, and semiconducting of new materials, and it has a large range of electrical properties. The combination of transition metal dichalcogenides (TMDCs) and two dimensional (2D) materials like hexagonal boron nitride (h-BN) in lateral heterostructures offers a unique platform for designing and engineering novel electronic devices. We report the fabrication of highly conductive interfaces in crystalline ionic liquid-gated (ILG) field-effect transistors (FETs) consisting of a few layers of MoTe2/h-BN heterojunctions. In our initial exploration of tellurium-based semiconducting TMDs, we directed our attention to MoTe2 crystals with thicknesses exceeding 12 nm. Our primary focus centered on investigating the transport characteristics and quantitatively assessing the surface interface heterostructure. Our transconductance (gm) measurements indicate that the very efficient carrier modulation with an ILG FET is two times larger than standard back gating, and it demonstrates unipolarity of the device. The ILG FET exhibited highly unipolar p-type behavior with a high on/off ratio, and it significantly increased the mobility in MoTe2/h-BN heterochannels, achieving improvement as one of the highest recorded mobility increments. Specifically, we observed hole and electron mobility values ranging from 345 cm2 V−1 s−1 to 285 cm2 V−1 s−1 at 80 K. We predict that our ability to observe the intrinsic, heterointerface conduction in the channels was due to a drastic reduction of the Schottky barriers, and electrostatic gating is suggested as a method for controlling the phase transitions in the few layers of TMDC FETs. Moreover, the simultaneous structural phase transitions throughout the sample, achieved through electrostatic doping control, presents new opportunities for developing phase change devices using atomically thin membranes. [ABSTRACT FROM AUTHOR]

Phase-Change Materials (PCMs) are widely applied in dynamic optical modulation due to the dramatic changes in their complex refractive index caused by temperature variation. As the functionality varies, the application of a single PCM cannot meet the compact, efficient and broadband needs of optical modulators. In this work, we combine vanadium dioxide (VO2) and a chalcogenide (Ge2Sb2Te5 (GST) or In3SbTe2 (IST)) to obtain a VO2–GST/IST multiple-stack film that is optimized by a genetic algorithm. This film has a wide spectrum and high modulation properties with three self-switchable modes varied by temperature, including transmission, absorption and reflection. The optimal results are an average normal transmittance, absorbance, and reflectance of 0.76, 0.91, 0.86 in 3–5 μm and 0.72, 0.90, 0.90 in 8–14 μm under different temperature ranges. The film enhances the transmission and absorption properties due to the formation of anti-reflective coating and Fabry–Perot resonance. Compared with GST, the film maintains high reflectance due to the metal-like interface reflection of crystalline IST, which exhibits metallic properties. For different polarization states, the film demonstrates great directional insensitivity when the incidence angles vary from 0° to 60°. The designed self-adaptive multistage infrared radiative thermo-optic modulator has promising implications for optical fuse, fiber-optic communication and energy storage fields. [ABSTRACT FROM AUTHOR]

Raman spectroscopy has proven its effectiveness as a highly informative and sensitive method for the nondestructive analysis of layered nanostructures and their interfaces. However, there is a lack of information concerning the characteristic phonon modes and their activity in Si/SiO2 nanostructures. In order to overcome this problem, the phonon states and Raman spectra of several Si/SiO2 superlattices (SL) with layer thicknesses varied within 0.5–2 nm are studied using DFT-based computer modeling. Two types of structures with different interfaces between crystalline silicon and SiO2 cristobalite were studied. A relationship between the phonon states of heterosystems and the phonon modes of the initial crystals was established. Estimates of the parameters of deformation potentials are obtained, with the help of which the shifts of phonon frequencies caused by elastic strains in the materials of the SL layers are interpreted. The dependence of intense Raman lines on the SL structure has been studied. Several ways have been proposed to use this information, both for identifying the type of interface and for estimating the structural parameters. The obtained information will be useful for the spectroscopic characterization of the silicon/oxide interfaces. [ABSTRACT FROM AUTHOR]

The oxide-semiconductor interface is a key element of MOS transistors, which are widely used in modern electronics. In silicon electronics, SiO2 is predominantly used. The miniaturization requirement raises a problem regarding the growing of heterostructures with ultrathin oxide layers. Two structural models of interface between crystalline Si and cristobalite SiO2 are studied by using DFT-based computer modelling. The structures of several Si/SiO2 superlattices (SL), with layer thicknesses varied within 0.5–2 nm, were optimized and tested for stability. It was found that in both models the silicon lattice conserves its quasi-cubic structure, whereas the oxide lattice is markedly deformed by rotations of the SiO4 tetrahedra around axes perpendicular to the interface plane. Based on the analysis of the calculated total energy of SLs with different thicknesses of the layers, an assessment of the interface formation energy was obtained. The formation energy is estimated to be approximately 3–5 eV per surface Si atom, which is close to the energies of various defects in silicon. Elastic strains in silicon layers are estimated at 5–10%, and their value rapidly decreases as the layer thickens. The elastic strains in the oxide layer vary widely, in a range of 1–15%, depending on the interface structure. [ABSTRACT FROM AUTHOR]

Polymer materials with excellent physicochemical and electrical properties are desirable for energy storage applications in advanced electronics and power systems. Here, Al2O3@ZrO2 nanoparticles (A@Z) with a core-shell structure are synthesized and introduced to a P(VDF-HFP) matrix to fabricate P(VDF-HFP)/A@Z nanocomposite films. Experimental and simulation results confirm that A@Z nanoparticles increase the crystallinity and crystallization temperature owing to the effect of the refined crystal size. The incorporation of A@Z nanoparticles leads to conformational changes of molecular chains of P(VDF-HFP), which influences the dielectric relaxation and trap parameters of the nanocomposites. The calculated total trapped charges increase from 13.63 μC of the neat P(VDF-HFP) to 47.55 μC of P(VDF-HFP)/5 vol%-A@Z nanocomposite, indicating a substantial improvement in trap density. The modulated crystalline characteristic and interfaces between nanoparticles and polymer matrix are effective in inhibiting charge motion and impeding the electric conduction channels, which contributes to an improved electrical property and energy density of the nanocomposites. Specifically, a ~200% and ~31% enhancement in discharged energy density and breakdown strength are achieved in the P(VDF-HFP)/5 vol%-A@Z nanocomposite. [ABSTRACT FROM AUTHOR]

At present, the purchasing prices for silicon-based photovoltaic modules with 20% efficiency and more are between 20 and 40 EURct/Wp. These numbers correspond to 40 to 80 EUR/m2 and are in the same range as the mounting costs (material prices plus salaries) of such modules. Installers and operators of photovoltaic systems carefully balance the module and mounting costs when deciding among modules of different efficiencies. This contribution emulates the installer's decision via a simple, analytical module mounting decision (Mo2De) model. A priori, the model, and the resulting conclusions are completely independent of the photovoltaically active material inside the modules. De facto, however, based on the present state (cost, efficiency, reliability, bankability, etc.) of modules fabricated from (single) crystalline Si cells, conclusions on other photovoltaic materials might also be drawn: On the one hand, the model suggests that lower-efficiency modules with efficiencies below 20% will be driven out of the market. Keeping in mind their installation costs, installers will ask for large discounts for lower-efficiency modules. Technologies based on organic semiconductors, CdTe, CIGS, and even multicrystalline Si, might not survive in the utility market, or in industrial and residential applications. Moreover, this 20% mark will soon reach 23%, and finally will stop at around 25% for the very best, large-area (square meter sized) commercial modules based on single crystalline silicon only. On the other hand, it also seems difficult for future higher-efficiency modules based on tandem/triple cells to compete with standard Si-based reference modules. Compared to their expected higher efficiency, the production costs of tandem/triple cell modules and, therefore, also their required markup in sales, might be too high. Depending on the mounting cost, the Mo2De-model predicts acceptable markup values of 1 EURct/Wp (for low mounting costs of around 10 EUR/m2) to 11 EURct/Wp (for high mounting costs of 100 EUR/m2) if the module efficiency increases from 23% to 30%. Therefore, a 23% to 24% module efficiency, which is possible with silicon cells alone, might be enough for many terrestrial photovoltaic applications. [ABSTRACT FROM AUTHOR]

The development of accident-tolerant materials is of great significance for preventing the zirconium–water reactions and improving the inherent safety of nuclear reactors. In this study, ZrC/Ni multilayers with average layer thicknesses of 5, 10, 20, 50, and 100 nm were designed and successfully fabricated by magnetron sputtering. The characterization results of GIXRD, SEM, AFM, TEM, etc., show that the series of films are mainly composed of alternately deposited Ni crystalline layers and ZrC amorphous layers, and the interface is clear. The films were irradiated with 50 keV He+ with a fluence of 1.0 × 1017 ions/cm2 at room temperature, and the films with different layer thicknesses kept the original phase composition. It was found that an amorphous transition layer with a thickness of about 30 nm appeared between the amorphous and crystalline interface of the 100 nm film by TEM characterization. The analysis shows that this layer is formed by the mixing of Ni and Zr elements induced by irradiation, which is not conducive to He+ migration and produces large-sized helium bubbles. The appearance of the transition layer improves the irradiation stability of the amorphous/crystalline composite film, thus providing a theoretical basis for the application of this type of material in fuel cladding. [ABSTRACT FROM AUTHOR]

In this work, the epitaxial semipolar (11–22) AlN was prepared on nonpolar m-sapphire substrate by combining sputtering and high-temperature annealing. According to our systematic measurements and analysis from XRD, Raman spectra, and AFM, the evolution of crystalline structure and morphology was investigated upon increasing AlN thickness and annealing duration. The annealing operation intensively resets the lattice and improves the crystalline quality. By varying the film thickness, the contribution from the AlN-sapphire interface on crystalline quality and lattice parameters during the annealing process was investigated, and its contribution was found to be not so obvious when the thickness increased from 300 nm to 1000 nm. When the annealing was performed under durations from 1 to 5 h, the crystalline quality was found unchanged; meanwhile, the evolution of morphology was pronounced, and it means the crystalline reorganization happens prior to morphology reset. Finally, the annealing treatment enabled a zig-zag morphology on the AlN template along the sapphire [0001] direction in the plane, which potentially affects the subsequent device epitaxy process. Therefore, our results act as important experience for the semipolar nitride semiconductor laser device preparation, particularly for the epitaxy of microcavity structure through providing the crystalline evolution. [ABSTRACT FROM AUTHOR]

The aim of this review is to summarize studies conducted by temperature-modulated differential scanning calorimetry (TMDSC) on polymer crystallization. This technique can provide several advantages for the analysis of polymers with respect to conventional differential scanning calorimetry. Crystallizations conducted by TMDSC in different experimental conditions are analysed and discussed, in order to illustrate the type of information that can be deduced. Isothermal and non-isothermal crystallizations upon heating and cooling are examined separately, together with the relevant mathematical treatments that allow the evolution of the crystalline, mobile amorphous and rigid amorphous fractions to be determined. The phenomena of 'reversing' and 'reversible' melting are explicated through the analysis of the thermal response of various semi-crystalline polymers to temperature modulation. [ABSTRACT FROM AUTHOR]

Titanium-based alloys are widely used in aerospace engineering. They have good mechanical and corrosion properties but, in some cases, the material itself or the coating should meet some additional requirements. For example, it may be a requirement of high reflectance to provide effective temperature control. Wollastonite is a promising component for reflective coatings because it improves both their whiteness and mechanical properties. This paper presents the results of studying the composition, the structure and the adhesive strength of wollastonite-containing silicate coatings to titanium substrate. The surface of titanium samples was pre-treated by laser cladding with TiC and etching to provide surface porosity. It has been shown that such treatment allows a significantly increase in the adhesive strength of the coating to the substrate. A decrease in the adhesive strength was observed on titanium samples with an excess of TiO2 on the surface. This is caused by the formation of crystalline PbTiO3 at the interface. [ABSTRACT FROM AUTHOR]

In this research, simulations were performed to investigate the effects of carrier selective front contact (CSFC) layer and defect state of hydrogenated amorphous silicon passivation layer/n-type crystalline silicon interface in silicon heterojunction (SHJ) solar cells employing the Automat for Simulation of hetero-structure (AFORS-HET) simulation program. The results demonstrated the effects of band offset determined by band bending at the interface of the CSFC layer/passivation layer. In addition, the nc-SiOx: H CSFC layer not only reduces parasitic absorption loss but also has a tunneling effect and field effect passivation. Furthermore, it increased the selectivity of contact. In the experimental cell, nc-SiOx:H was used as the CSFC layer, where efficiency of the SHJ solar cell was 22.77%. Our investigation shows that if a SiOx layer passivation layer is used, the device can achieve efficiency up to 25.26%. This improvement in the cell is mainly due to the enhancement in open circuit voltage (Voc) because of lower interface defect density resulting from the SiOx passivation layer. [ABSTRACT FROM AUTHOR]

The use of amorphous drug delivery systems is an attractive approach to improve the bioavailability of low molecular weight drug candidates that suffer from poor aqueous solubility. However, the pharmaceutical performance of many neat amorphous drugs is compromised by their tendency for recrystallization during storage and lumping upon dissolution, which may be improved by the application of coatings on amorphous surfaces. In this study, hot melt coating (HMC) as a solvent-free coating method was utilized to coat amorphous carvedilol (CRV) particles with tripalmitin containing 10% (w/w) and 20% (w/w) of polysorbate 65 (PS65) in a fluid bed coater. Lipid coated amorphous particles were assessed in terms of their physical stability during storage and their drug release during dynamic in vitro lipolysis. The release of CRV during in vitro lipolysis was shown to be mainly dependent on the PS65 concentration in the coating layer, with a PS65 concentration of 20% (w/w) resulting in an immediate release profile. The physical stability of the amorphous CRV core, however, was negatively affected by the lipid coating, resulting in the recrystallization of CRV at the interface between the crystalline lipid layer and the amorphous drug core. Our study demonstrated the feasibility of lipid spray coating of amorphous CRV as a strategy to modify the drug release from amorphous systems but at the same time highlights the importance of surface-mediated processes for the physical stability of the amorphous form. [ABSTRACT FROM AUTHOR]

In this article, the melting blend was used to prepare the Micro-ZnO/LDPE, Nano-ZnO/LDPE and Micro-Nano-ZnO/LDPE with different inorganic particles contents. The effect of Micro-ZnO and Nano-ZnO particles doping on interface microdomain and corona-resistance breakdown characteristics of LDPE composite could be explored. Based on the energy transfer and heat exchange theory of energetic electrons, the inner electrons energy transfer model of different ZnO/LDPE composites was built. Besides, the microstructure and crystalline morphology of inorganic ZnO-particles and polymer composites were detected by SEM, XRD, FTIR, PLM and DSC test, and the AC breakdown and corona-resistance breakdown characteristics of composites could be explored. From the experimental results, the Nano-ZnO particles after surface modification dispersed uniformly in LDPE matrix, and the nanoparticles agglomeration almost disappeared. The inorganic particles doping acted as the heterogeneous nucleation agent, which improved the crystallization rate and crystallinity of polymer composites effectively. The ZnO particles with different size doping constituted the different interface structure and crystalline morphology, which made different influence on composites macroscopic properties. When the Nano-ZnO particle size was 40nm and the mass fraction was 3%, the breakdown field strength of Nano-ZnO/LPDE was the highest and 15.8% higher than which of pure LDPE. At the same time, the shape parameter β of Micro-Nano-composite was the largest. It illustrated the microparticles doping reduced the probability of nanoparticles agglomeration in matrix. Besides, both Micro-ZnO and Micro-Nano-ZnO particles doping could improve the ability of corona corrosion resistance of LDPE in varying degrees. The corona-resistant breakdown time order of four samples was as follows: LDPE < Micro-ZnO/LDPE < Nano-ZnO/LDPE < Micro-Nano-ZnO/LDPE. When the mass fraction of Micro-ZnO and Nano-ZnO particles was 2% and 3% respectively, the corrosion depth and area of Micro-Nano-ZnO/LDPE was the least, and the ability of corona corrosion resistance was the strongest. [ABSTRACT FROM AUTHOR]

Interfaces in heterostructures of crystalline materials could strongly affect the slip of dislocations. Such interfaces have become one of the most popular methods to tailor material strength and ductility. This review focuses on the interaction of dislocations and interfaces in heterostructures, in which at least one component is metallic, as investigated by molecular dynamics, in order to systematically summarize our understanding about how dislocations interact with the interfaces. All the possible heterostructures of metallic materials are covered, such as twin boundaries, grain boundaries, bi-metal interfaces and metal/non-metal interfaces. Dislocations may either penetrate the interfaces by inducing steps into the interfaces or dissociate within the interfaces, depending on the type and orientation of the interface as well as the applied strain. Related dislocation interactions at the interface are also presented. In addition, we also discuss the effect of dislocation types, of applied strain and of the deformation method on the interaction of dislocations and interfaces. [ABSTRACT FROM AUTHOR]