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Influence of the Carrier Selective Front Contact Layer and Defect State of a-Si:H/c-Si Interface on the Rear Emitter Silicon Heterojunction Solar Cells.
- Source :
-
Energies (19961073) . Jun2020, Vol. 13 Issue 11, p2948. 1p. - Publication Year :
- 2020
-
Abstract
- In this research, simulations were performed to investigate the effects of carrier selective front contact (CSFC) layer and defect state of hydrogenated amorphous silicon passivation layer/n-type crystalline silicon interface in silicon heterojunction (SHJ) solar cells employing the Automat for Simulation of hetero-structure (AFORS-HET) simulation program. The results demonstrated the effects of band offset determined by band bending at the interface of the CSFC layer/passivation layer. In addition, the nc-SiOx: H CSFC layer not only reduces parasitic absorption loss but also has a tunneling effect and field effect passivation. Furthermore, it increased the selectivity of contact. In the experimental cell, nc-SiOx:H was used as the CSFC layer, where efficiency of the SHJ solar cell was 22.77%. Our investigation shows that if a SiOx layer passivation layer is used, the device can achieve efficiency up to 25.26%. This improvement in the cell is mainly due to the enhancement in open circuit voltage (Voc) because of lower interface defect density resulting from the SiOx passivation layer. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 19961073
- Volume :
- 13
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Energies (19961073)
- Publication Type :
- Academic Journal
- Accession number :
- 144301631
- Full Text :
- https://doi.org/10.3390/en13112948