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Your search keyword '"V V Chaldyshev"' showing total 6 results
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6 results on '"V V Chaldyshev"'

1. Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature

Author

V. V. Tret’yakov, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskii, D. I. Lubyshev, A. E. Kunitsyn, B. R. Semyagin, and N. N. Faleev

Subjects
Nanostructure, Materials science, business.industry, Precipitation (chemistry), Doping, Inorganic chemistry, chemistry.chemical_element, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter Physics, Epitaxy, Electronic, Optical and Magnetic Materials, Nanoclusters, Condensed Matter::Materials Science, chemistry, Condensed Matter::Superconductivity, Materials Chemistry, Optoelectronics, Condensed Matter::Strongly Correlated Electrons, Electrical and Electronic Engineering, business, Indium, Arsenic, Molecular beam epitaxy
Abstract

We have shown that two-dimensional layers of arsenic nanoclusters separated by a cluster-free GaAs matrix can be formed using indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature . Spatially ordered structures of As clusters have been obtained in epitaxial LT GaAs films doped with Si donors and Be acceptors and also in undoped films.

Published
1997

2. Research of resonant light reflection by a periodic system of GaAs/AlGaAs quantum wells

Author

V. V. Chaldyshev, A. A. Kondikov, and P. A. Tonkaev

Subjects
Physics, History, business.industry, Light reflection, Physics::Optics, Spectral bands, Distributed Bragg reflector, Polarization (waves), Spectral line, Computer Science Applications, Education, Optics, Optoelectronics, Specular reflection, business, Gaas algaas, Quantum well
Abstract

Measurements of the optical reflection spectra from periodic structures with two quantum wells in the elementary cell have been done. The dependencies of the light reflection on the angle of the light incidence, polarization and temperature were studied. An analysis of the experimental data showed that the pattern with 60 cells is a good Bragg reflector with reflectivity more than 90% in the maximum of the spectral band.

Published
2016

3. Modeling of the optical properties of a two-dimensional system of small conductive particles

Author

A. A. Kondikov, V. V. Chaldyshev, Tigran A. Vartanyan, and P. A. Tonkaev

Subjects
History, Materials science, business.industry, Computer Science Applications, Education, Computational physics, Software, Reflection (mathematics), Optics, business, Absorption (electromagnetic radiation), Electrical conductor, Lattice model (physics), Transmittance spectra
Abstract

Software was developed for quick numerical calculations and graphic display of the absorption, reflection and transmittance spectra of two-dimensional systems of small conductive particles. It allowed us to make instant comparison of calculation results and experimental data. A lattice model was used to simulate nearly distributed particles, and the coherent-potential approximation was applied to obtain a solution to the problem of interacting particles. The Delphi programming environment was used.

Published
2016

4. Molecular beam epitaxy growth and characterization of thin (<2 mu m) GaSb layers on GaAs(100) substrates

Author

A. A. Budza, L. M. Sorokin, R.N. Kutt, B. Ya. Mel'tser, V V Chaldyshev, T. S. Argunova, S.V. Shaposhnikov, S. S. Ruvimov, P. D. Altukhov, P. S. Kop’ev, Sergei Ivanov, Yu. A. Kovalenko, V. M. Ustinov, and A. A. Bakun

Subjects
Photoluminescence, Condensed matter physics, Chemistry, Exciton, Superlattice, Substrate (electronics), Condensed Matter Physics, Epitaxy, Electronic, Optical and Magnetic Materials, Hall effect, Materials Chemistry, Electrical and Electronic Engineering, Luminescence, Molecular beam epitaxy
Abstract

This paper reports the effect of growth parameters and buffer structure on the luminescence electrical and structural characteristics of thin (

Published
1993

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