Molecular beam epitaxy growth and characterization of thin (<2 mu m) GaSb layers on GaAs(100) substrates

Authors :: A. A. Budza
L. M. Sorokin
R.N. Kutt
B. Ya. Mel'tser
V V Chaldyshev
T. S. Argunova
S.V. Shaposhnikov
S. S. Ruvimov
P. D. Altukhov
P. S. Kop’ev
Sergei Ivanov
Yu. A. Kovalenko
V. M. Ustinov
A. A. Bakun
Source :: Semiconductor Science and Technology. 8:347-356
Publication Year :: 1993
Publisher :: IOP Publishing, 1993.
Abstract: This paper reports the effect of growth parameters and buffer structure on the luminescence electrical and structural characteristics of thin (

Subjects :: Photoluminescence
Condensed matter physics
Chemistry
Exciton
Superlattice
Substrate (electronics)
Condensed Matter Physics
Epitaxy
Electronic, Optical and Magnetic Materials
Hall effect
Materials Chemistry
Electrical and Electronic Engineering
Luminescence
Molecular beam epitaxy

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