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2. Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application.

11. Valence band edge tail states and band gap defect levels of GaN bulk and InxGa1−xN films detected by hard X-ray photoemission and photothermal deflection spectroscopy

12. Determination of the transition point from electron accumulation to depletion at the surface of InxGa1−xN films

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