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Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application.
- Source :
- Japanese Journal of Applied Physics; 8/10/2023, Vol. 62 Issue 8, p1-5, 5p
- Publication Year :
- 2023
-
Abstract
- GaN films were grown on hydride vapor phase epitaxy (HVPE) AlN/SiC templates by metalorganic CVD (MOCVD) without annealing the reactor to eliminate the memory effect. A step-terrace structure and smooth surface were obtained for the GaN film, which had a thickness of ∼200 nm. Subsequently, AlGaN/GaN heterostructures for application in high electron mobility transistors (HEMTs) with thin GaN channels were fabricated without a C- or Fe-doped GaN buffer layer. The interface quality at the AlGaN/GaN heterostructure was good enough for a two-dimensional electron gas to exhibit Shubnikov–de Haas oscillation in a magnetic field at 1.8 K. The GaN HEMTs with a thin channel on the AlN/SiC templates exhibited both a pinch-off character and conventional properties. In view of both the shorter epitaxial growth time and higher thermal conduction, HVPE AlN/SiC templates are applicable to the fabrication of GaN HEMTs by MOCVD. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00214922
- Volume :
- 62
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Japanese Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 169807563
- Full Text :
- https://doi.org/10.35848/1347-4065/ace671