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In this work, we have studied the dominant transport mechanism in an Au/InSb/InP diode. The InP (n) substrate is restructured with some monolayers of an InSb thin film. The structures have been characterized electrically and the C(V) and I(V) curves have been plotted. The saturation current , the serial resistance and the mean ideality factor n were calculated using the I(V) characteristics and are respectively equal to , and 1.7. Thus, the doping level and diffusion voltage were deduced from the C(V) curves and are evaluated to and . The analysis of I(V) and C(V) characteristics allows us to determine that the mean interfacial density of states and the transmission coefficient are respectively equal to and . The presence of deep discrete donor levels in the semiconductor bulk and/or the distributed density of states is responsible for the nonlinearity of the characteristic because the C(V) curve is controlled by two donor levels located at 0.76 eV and 1.02 eV relative to the conduction band edge .

This paper deals with both the theoretical and experimental analysis of electronic properties of n-type indium phosphide (n-InP) epitaxial layers covered by native oxides for gas sensor applications. The rigorous calculations of the influence of continuous surface states with U-shaped density distribution NSS(E) as well as surface fixed charge (QFC) representing adsorbed ionized species or surface ?-doping on the conductivity of n-InP layers were carried out. The surface state density minimum (NSS0) was changed from 1011 to 1013 eV-1cm-2. From the Hall effect measurements upon NO2 exposition the concentration of charge carriers was determined as a function of gas concentration. Additionally, the roughness of the n-InP surface before and after gas action was investigated by using AFM.