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The ultra-wide bandgap semiconductor gallium oxide (Ga2O3) offers substantial promise to significantly advance power electronic devices as a result of its high breakdown electric field and maturing substrate technology. A key remaining challenge is the ability to grow electronic-grade epitaxial layers at rates consistent with 20–40 μm thick drift regions needed for 20 kV and above technologies. This work reports on extensive characterization of epitaxial layers grown in a novel metalorganic chemical vapor deposition tool that permits growth rates of 1.0–4.0 μm h−1. Specifically, optical, structural and electrical properties of epilayers grown at ∼1 μm h−1 are reported, including employment in an operating MOSFET. The films demonstrate relatively smooth surfaces with a high degree of structural order, limited point defectivity (Nd − Na ≈ 5 × 1015 cm−3) and an optical bandgap of 4.50 eV. Further, when employed in a MOSFET test structure with an n+ doped channel, a record high mobility for a transistor structure with a doped channel of 170 cm2 V−1 s−1 was measured via the Hall technique at room temperature. This work reports for the first time a β-Ga2O3 MOSFET grown using Agnitron Technology's high growth rate MOCVD homoepitaxial process. These results clearly establish a significant improvement in epilayer quality at growth rates that can support future high voltage power device technologies. [ABSTRACT FROM AUTHOR]

We have employed the aerosol deposition method (ADM) to direct-write 39-µm-thick polycrystalline films of yttrium iron garnet at room temperature onto sapphire at a rate of 1–3 µm/min as a first step toward integration into microwave magnetic circuits. The resulting randomly oriented polycrystalline films are composed of fractured compact nanosized crystallites. Upon postdeposition sintering at 1280 °C the density and magnetic properties become closer to those of the bulk. These results suggest that the ADM shows promise for depositing very thick films at high deposition rates to produce structurally and magnetically uniform films that retain the structural properties of the starting powder. [ABSTRACT FROM AUTHOR]

Patterned layers of Al2O3 prepared by atomic layer deposition (ALD) are used to produce structures of alternating polarity (c-plane orientation) of GaN on Ga-polar GaN epilayers. Annealing prior to epitaxial growth allows the amorphous ALD layers to attain sufficient crystallinity, which enables N-polar GaN growth over the annealed ALD Al2O3 and Ga-polar growth over the bare substrate. Transmission electron microscopy and electron channeling contrast imaging were carried out to characterize the structural nature of the material and confirm crystallinity. ALD Al2O3 may be suitable for fabricating novel variable-polarity devices, particularly where growth on native, Ga-polar GaN substrates is beneficial. [ABSTRACT FROM AUTHOR]