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21 results on '"SUZUKI, NOBUO"'

17. On-Chip Optical Interconnect.

Author

OHASHI, KEISHI, NISHI, KENICHI, SHIMIZU, TAKANORI, NAKADA, MASAFUMI, FUJIKATA, JUNICHI, USHIDA, JUN, TORII, SUNAO, NOSE, KOICHI, MIZUNO, MASAYUKI, YUKAWA, HIROAKI, KINOSHITA, MASAO, SUZUKI, NOBUO, GOMYO, AKIKO, ISHI, TSUTOMU, OKAMOTO, DAISUKE, FURUE, KATSUYA, UENO, TOSHIHIDE, TSUCHIZAWA, TAI, WATANABE, TOSHIFUMI, and YAMADA, KOJI

Subjects
DATA transmission systems, INTEGRATED circuits, ELECTRONIC systems, OPTICAL interconnects, ELECTROMAGNETIC interference, BANDWIDTHS
Abstract

We describe a cost-effective and low-power-consumption approach for on-chip optical interconnection. This approach includes an investigation into architectures, devices, and materials. We have proposed and fabricated a bonded structure of an Si-based optical layer on a large-scale integration (LSI) chip. The fabricated optical layer contains Si nanophotodiodes for optical detectors, which are coupled with SiON waveguides using surface-plasmon antennas. Optical signals were introduced to the optical layer and distributed to the Si nanophotodiodes. The output signals from the photodiodes were sent electrically to the transimpedance-amplifier circuitries in the LSI. The signals from the photodiodes triggered of the circuitries at 5 GHz. Since electrooptical modulators consume the most power in on-chip optical interconnect systems and require a large footprint, they are critical to establish on-chip optical interconnection. Two approaches are investigated: 1) an architecture using a fewer number of modulators and 2) high electrooptical coefficient materials. [ABSTRACT FROM AUTHOR]

Published
2009
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18. All-Optical Switch Utilizing Intersubband Transition in GaN Quantum Wells.

Author

Lizuka, Norio, Kaneko, Kei, and Suzuki, Nobuo

Subjects
QUANTUM wells, CHANGE, GALLIUM nitride, WAVELENGTHS, SPECTRUM analysis, POLARIZATION (Electricity)
Abstract

Intersubband transition (ISBT) in GaN quantum wells (QWs) was investigated from the viewpoint of application to ultrafast all-optical switches. The effect of crystalline quality on the absorption saturation characteristics was examined and reduction of edge dislocations was found to be a crucial factor in decreasing operation energy. Then, the switching performance was investigated for devices with improved crystalline quality. Modulation of signal pulses with a pulse interval of less than 1 ps was confirmed. Another device displayed gate-switch operation with an extinction ratio of greater than 10 dB. Comparison of the absorption recovery process in both devices suggested that the process is strongly affected by the QW structure. [ABSTRACT FROM AUTHOR]

Published
2006
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