20 results on '"Radziewicz D"'
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2. DLTS study of electrically active defects in triple quantum well InGaAsN/GaAs heterostructures
3. Deep levels in InGaAsN/GaAs and InGaAs/GaAs heterojunctions
4. Low temperature investigation of electrical and optical properties of InGaAsN/Gas QW Schottky barrier photodetectors
5. Investigation of Si delta-doped InGaAs/GaAs QW MSM photodetectors
6. AP-MOVPE growth and characterization of GaAs1-xNx epilayers.
7. Dislocation in lattice-mismatched InGaAs/GaAs heterostructures as a factor of optoelectronic device degradation.
8. Investigations of MOVPE growth of zinc delta doped GaAs.
9. Profiling of a GaAs structure using the probe method.
10. Investigation of the electrical properties of undoped gallium arsenide epitaxial layers.
11. MOVPE growth and characterisation of silicon δ-doped GaAs, AlAs and AlxGa1-xAs for advanced semiconductor devices.
12. Investigation of INGAAs/GAAs photodetectors with ALAs/GAAS nanolayers.
13. MOVPE growth and characterisation of (Al,Ga)N layers.
14. Investigations of MOVPE growth of zinc delta doped GaAs
15. Investigation of the electrical properties of undoped gallium arsenide epitaxial layers
16. Profiling of a GaAs structure using the probe method
17. Investigation of INGAAs/GAAs photodetectors with ALAs/GAAS nanolayers
18. MOVPE growth and characterisation of (Al,Ga)N layers
19. MOVPE growth and characterisation of silicon δ-doped GaAs, AlAs and Al/sub x/Ga/sub 1-x/As for advanced semiconductor devices
20. Dislocation in lattice-mismatched InGaAs/GaAs heterostructures as a factor of optoelectronic
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