28 results on '"Manchanda, L."'
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2. Si-doped aluminates for high temperature metal-gate CMOS: Zr-Al-Si-O, a novel gate dielectric for low power applications.
3. The impact of nitrogen profile engineering on ultrathin nitrided oxide films for dual-gate CMOS ULSI.
4. A boron-retarding and high interface quality thin gate dielectric for deep-submicron devices.
5. Impact of boron diffusion through O/sub 2/ and N/sub 2/O gate dielectrics on the process margin of dual-poly low power CMOS.
6. Hot-Electron Trapping and Generic Reliability of p + Polysilicon/SiO2/Si Structures for Fine-Line CMOS Technology.
7. The Effect of TaSi2/n+ Poly Gate on Hot-Electron Instability of Small Channel MOSFETs.
8. Fluorine effect on boron diffusion of p/sup +/ gate devices (MOSFETs).
9. Gate quality doped high K films for CMOS beyond 100 nm: 3-10 nm Al/sub 2/O/sub 3/ with low leakage and low interface states.
10. Thickness dependence of boron penetration through O/sub 2/- and N/sub 2/O-grown gate oxides and its impact on threshold voltage variation.
11. A high-performance directly insertable self-aligned ultra-rad-hard and enhanced isolation field-oxide technology for gigahertz silicon NMOS/CMOS VLSI.
12. Inversion layer mobility of MOSFET's fabricated with NMOS Submicrometer technology.
13. Gate capacitance attenuation in MOS devices with thin gate dielectrics.
14. Anomalous C-V characteristics of implanted poly MOS structure in n/sup +//p/sup +/ dual-gate CMOS technology.
15. A high-performance directly insertable self-aligned ultra-radiation-hard and enhanced isolation field-oxide technology for gigahertz Si-CMOS VLSI.
16. Yttrium oxide/silicon dioxide: a new dielectric structure for VLSI/ULSI circuits.
17. γ—Radiation effects on MOSFET's fabricated with NMOS Submicrometer technology.
18. Gate quality doped high K films for CMOS beyond 100 nm: 3-10 nm Al/sub 2/O/sub 3/ with low leakage and low interface states
19. Si-doped aluminates for high temperature metal-gate CMOS: Zr-Al-Si-O, a novel gate dielectric for low power applications
20. A robust, 1.8 V 250 μW direct-contact 500 dpi fingerprint sensor
21. The impact of nitrogen profile engineering on ultrathin nitrided oxide films for dual-gate CMOS ULSI
22. A robust, 1.8 V 250 /spl mu/W direct-contact 500 dpi fingerprint sensor.
23. Temperature and channel-length dependence of impact ionization in p-channel MOSFETs.
24. IVB-7 yttrium oxide/silicon dioxide: A new dielectric structure for VLSI/ULSI.
25. Author index.
26. Numerical simulation of MOS devices with non-degenerate gate.
27. Hot carrier energy distributions in short channel MOSFETs and the persistence of substrate currents at low drain voltages.
28. [Back cover].
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