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A wafer-level-packaging technology was used to integrate the 0.1 µm AlSb/InAs HEMT low-noise amplifiers with power amplifiers, switches and phase shifters to form a compact tri-stack transmit/receive module for light-weight and ultralow-power applications. The high manufacturability of AlSb/InAs HEMT receivers operating at 0.9 mW was demonstrated on a tri-stack wafer. This demonstration of manufacturable tri-stack transmit/receive modules is essential for phased-array applications requiring light weight and ultralow power.

The degradation mechanisms of 0.1 mum AlSb/InAs HEMTs subjected to elevated-temperature lifetesting at three temperatures in N2 atmosphere were investigated. Device degradation exhibits the increase of non-pinch-off drain current (IDS), the decrease of transconductance (gm) and the gate current (IG) increase. The IG increase was found to correlate with material degradation on the gate-recess and Al0.7Ga0.3Sb-mesa-floor surfaces. Higher oxygen content was detected on these surfaces, indicating that they were modified by oxidation, which resulted in the IG increase. Despite the degradation observed in 0.1 mum AlSb/InAs HEMTs, the three-temperature lifetesting shows that the activation energy (Ea) is approximately 1.5 eV and demonstrates a median time to failure (MTF)of 2times106 hours at Tjunction of 85degC. This reliability result is essential for successful insertion of AlSb/InAs HEMTs into systems with ultralow-power requirements. Moreover, ohmic-metal lateral diffusion of Pd and Au elements was observed. To avoid potential ohmic-metal-lateral-diffusion induced device failure, lifetesting temperatures were kept below 190degC in this investigation.

Three-temperature lifetesting was performed to evaluate the reliability performance of 0.1 μm AlSb/InAs HEMT low noise amplifiers (LNAs) for ultralow-power applications. For the first time, the reliability performance of 0.1 μm AISb/lnAs HEMT LNAs was demonstrated. The results show a median time to failure of approximately 2x106 hours at Tjunction of 85°C with activation energy of 1.5 eV. High-reliability performance is essential for successful insertion of 0.1 μm AISb/lnAs HEMT LNAs for military and space applications with ultralow-power requirements.

A 0.1 μm In02Al08Sb-InAs HEMT MMIC technology was developed for phased-array applications with ultralow-power and oxidation-free requirements. An In02Al08Sb layer was utilized to replace the upper AlSb layer in the conventional AlSb-InAs HEMT in order to mitigate the oxidation incurred by the AlSb layer. In this work, we have demonstrated excellent dc and rf performance on both devices and low-noise amplifiers (LNAs) using 0.1 μm In02Al08Sb-InAs HEMTs on 3-inch GaAs substrates. This accomplishment is crucial for phased-array applications with ultralow-power and oxidation-free requirements.

In this paper, we present a two-stage low-power/low-noise MMIC amplifier. At 10-GHz, the amplifier demonstrates high gain (~18-dB) and moderate noise figure (

In this paper, we report AlSb/InAs HEMT high frequency perfornance up to 260 GHz fT. The 0.1-μm gate length and 80-um total gate periphery devices exhibited a small-signal available gain of 10 dB at 100 GHz, and extrapolated fT and fmAx performance of 260 and 280 GHz, respectively at a drain voltage of 0.4 volts and drain current of 18 mA.

In this paper, we report record AlSb/InAs HEMT high frequency gain performance up to 275 GHz f/sub MAX/. The 0.1-/spl mu/m gate length and 80-/spl mu/m total gate periphery devices exhibited a small-signal available gain of 10 dB at 100 GHz, and extrapolated f/sub T/ and f/sub MAX/ performance of 220 and 275 GHz, respectively, at a drain voltage of 0.5 V and drain current of 27 mA. To the best of our knowledge, this is the highest reported f/sub MAX/ and high-frequency available gain reported for InAs-channel HEMTs. Furthermore, it is first AlSb/InAs HEMT result that has achieved f/sub MAX/ greater than f/sub T/, which clearly demonstrates that this approach is not intrinsically limited in regards to achieving high frequency and high-gain characteristics.

In addition to the significant impact that VCSELs have on design, performance and cost of fiber optic modules, there is a potential for high density integration for SONET in the form of 1.3 /spl mu/m InGaAsN VCSEL arrays.