50 results on '"Guillot G"'
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2. Current instabilities and deep level investigation on AlGaN/GaN HEMT's on silicon and sapphire substrates.
3. Effect on lattice parameter and optical band gap of thallium incorporation in a GaInAs matrix.
4. Strong carrier confinement in self-assembled InAs/InP(001) elongated quantum islands emitting at 1.55 μm.
5. Impact of growth interruption on interface roughness of MOCVD grown InGaAs/InAlAs studied by photoreflectance spectroscopy
6. Influence of deep levels in AlInAs/GalnAs/InP HFETs.
7. Suppression of the kink effect in InGaAs/InAlAs HEMTs grown by MBE by optimizing the InAlAs buffer layer.
8. Optical characterizations of lattice matched and strained GaInAs/AlInAs single quantum wells.
9. Optical and structural characterizations of In/sub 0.53/Fa/sub 0.47/As/In/sub x/Ga/sub 1-x/As strained quantum wells on InP substrate.
10. Deep trap characterization of Al./sub 48/In./sub 52/As/In/sub .52/(Ga/sub .7/Al/sub .3/)/sub .48/As heterostructures.
11. Dopant level freeze-out in 6H-SiC Schottky diodes and junctions.
12. Study on main electron scattering mechanisms in InGaAs/InAlAs single quantum wells by photoreflectance measurements versus temperature.
13. Admittance spectroscopy measurements on AlInAs/GaInAs/AlInAs quantum well structures: Evidence of a deep level assisted tunneling.
14. Optical characterization of InAlAs/InP single and double heterostructures.
15. Electrical and optical characterization of n-GaAs grown by MOCVD on semi-insulating InP and application to defect studies on MESFETs devices.
16. Noise and current characterization of lattice-mismatched LP-MOCVD grown InP/InGaAs/InP photodetector arrays.
17. Correlation between trap characterization by drain conductance dispersion and current transient spectroscopy in InAlAs/InP HFET.
18. Photoreflectance study of surface Fermi level of InAlAs after sulphidation.
19. On the origin of the semi-insulating behaviour of low-temperature In/sub 0.52/Al/sub 0.48/As grown by molecular beam epitaxy.
20. Micromachined structures for vertical microelectrooptical devices on InP.
21. Anomalous optical behaviour of LT-AlInAs related to anisotropic composition modulation.
22. A slow-trap model for the kink effect on InAlAs/InP HFET.
23. Impact of growth interruption on interface roughness of MOCVD grown InGaAs/InAlAs studied by photoreflectance spectroscopy.
24. Use of spectrally resolved scanning photoluminescence for optimizing the growth conditions of InAlAs/InP heterostructures.
25. Investigation of a molecular beam epitaxy regrowth procedure using an in-situ H/sub 2/ plasma probed with an InP/InGaAs/InP quantum well.
26. Characterization of deep levels in 6H-SiC pn junction diodes.
27. Control of the interface roughness in highly strained In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As heterostructures.
28. Surface InAs/InP quantum wells: epitaxial growth and characterization.
29. Electrical characterization of lattice-mismatched In/sub x/Ga/sub 1-x/As photodiode arrays for detection to 1.7 mu m.
30. Burst Noise And Tunneling Currents In Lattice-Mismatched InP/InGaAs/InP Photodetector Arrays.
31. Current transient spectroscopy on AlInAs/GaAlInAs heterojunction field effect transistors.
32. Effects of the passivation process on the electrical characteristics of GaInAs planar photodiodes.
33. Electronic properties of InAs surface quantum wells grown on InP.
34. Tunable microcavity based on InP-air Bragg mirrors.
35. Multi-exciton complexes in single InAs quantum dots grown on InP(001) substrate.
36. New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFETs.
37. Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications.
38. Surface InAs/InP quantum wells: epitaxial growth and characterization
39. Influence of deep levels in AlInAs/GalnAs/InP HFETs
40. Characterization of deep levels in 6H-SiC pn junction diodes
41. Use of spectrally resolved scanning photoluminescence for optimizing the growth conditions of InAlAs/InP heterostructures
42. Effect on lattice parameter and optical band gap of thallium incorporation in a GaInAs matrix
43. A slow-trap model for the kink effect on InAlAs/InP HFET
44. Optimization of a fuse opening switch
45. Multi-exciton complexes in single InAs quantum dots grown on InP[001] substrate
46. Strong carrier confinement in self-assembled InAs/InP[001] elongated quantum islands emitting at 1.5 μm
47. Current instabilities and deep level investigation on AlGaN/GaN HEMT's on silicon and saphir substrates
48. Investigation of a molecular beam epitaxy regrowth procedure using an in-situ H/sub 2/ plasma probed with an InP/InGaAs/InP quantum well
49. Evidence of surface states for 4H-SiC MESFETs on semi-insulating substrates by current transient spectroscopy.
50. Optimization of a fuse opening switch.
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