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Current instabilities and deep level investigation on AlGaN/GaN HEMT's on silicon and sapphire substrates.

Authors :
Sghaier, N.
Yacoubi, N.
Bluet, J.M.
Souifi, A.
Guillot, G.
Gaquiere, C.
De Jaeger, J.C.
Source :
Proceedings the 16th International Conference on Microelectronics, 2004 (ICM 2004); 2004, p672-675, 4p
Publication Year :
2004

Details

Language :
English
ISBNs :
9780780386563
Database :
Complementary Index
Journal :
Proceedings the 16th International Conference on Microelectronics, 2004 (ICM 2004)
Publication Type :
Conference
Accession number :
81655962
Full Text :
https://doi.org/10.1109/ICM.2004.1434755