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Current instabilities and deep level investigation on AlGaN/GaN HEMT's on silicon and sapphire substrates.
- Source :
- Proceedings the 16th International Conference on Microelectronics, 2004 (ICM 2004); 2004, p672-675, 4p
- Publication Year :
- 2004
Details
- Language :
- English
- ISBNs :
- 9780780386563
- Database :
- Complementary Index
- Journal :
- Proceedings the 16th International Conference on Microelectronics, 2004 (ICM 2004)
- Publication Type :
- Conference
- Accession number :
- 81655962
- Full Text :
- https://doi.org/10.1109/ICM.2004.1434755