Search

Your search keyword '"D. C. Driscoll"' showing total 5 results
Start Over Author "D. C. Driscoll" Publisher ieee
5 results on '"D. C. Driscoll"'

1. 1.55 μm photoconductive THz emitters based on ErAs:In0.53Ga0.47As superlattices

Author

A. Schwagmann, F. Ospald, K. von Klitzing, Jurgen H. Smet, Micah Hanson, Hong Lu, Arthur C. Gossard, D. C. Driscoll, and Z.-Y. Zhao

Subjects
Excitation wavelength, Materials science, business.industry, Terahertz radiation, Superlattice, Photoconductivity, Physics::Optics, Carrier lifetime, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Gallium arsenide, Condensed Matter::Materials Science, chemistry.chemical_compound, Optics, chemistry, Optoelectronics, Semiconductor superlattices, High Energy Physics::Experiment, Astrophysics::Earth and Planetary Astrophysics, business, Indium gallium arsenide
Abstract

ErAs:In 0.53 Ga 0.47 As superlattice THz emitters are fabricated and characterized at an excitation wavelength of 1.55 µm. Photocurrent-voltage characteristics, carrier lifetimes and bandwidth of the THz output are discussed as a function of the superlattice period.

Published
2010

2. THz-emitters based on ballistic transport in semiconductor nanostructures

Author

P. Pohl, G. H. Döhler, D. C. Driscoll, A. C. Gossard, M. Eckardt, A. Friedrich, A. Schwanhausser, S. Malzer, M. Hanson, F. Renner, and P. Kiesel

Subjects
Materials science, business.industry, Photoconductivity, Energy conversion efficiency, Impedance matching, Gallium arsenide, chemistry.chemical_compound, Nanoelectronics, chemistry, Ballistic conduction, Optoelectronics, Charge carrier, Antenna (radio), business
Abstract

A novel concept for THz-photomixers based on semiconductor nanostructures with strongly increased conversion efficiency is presented. In THz-photomixers, typically based on photoconductivity in "low-temperature-grown-GaAs." (LT-GaAs), the performance is typically limited by the (very low) photoconductive gain and depends critically on an extremely short lifetime of photo-generated charge carriers in LT-GaAs. In contrast to those devices, in our photomixer the gain does not depend on the recombination lifetime but only on the transit time and on the path length of the photo-generated electrons within suitably designed p-i-n nanostructures, which both can be optimised for (primarily) ballistic transport. In addition, impedance matching to the attached antenna can be achieved.

Published
2004

3. Gigahertz manipulation of electron spins in semiconductor nanostructures

Author

Jeremy Levy, Roberto C. Myers, D. C. Driscoll, Yuichiro K. Kato, Arthur C. Gossard, and David D. Awschalom

Subjects
Materials science, Spins, Condensed matter physics, business.industry, Intrinsic semiconductor, Physics::Optics, Electron, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Gallium arsenide, Condensed Matter::Materials Science, chemistry.chemical_compound, Semiconductor, chemistry, Optoelectronics, Semiconductor optical gain, Photonics, business, Quantum
Abstract

We analyse electronic, photonic, and magnetic manipulation of electrons and nuclear spins in a variety of semiconductor nanostructures for quantum spin information processing in the solid state. Temporally-and spatially-resolved magneto-optical measurements on semiconductor quantum structures are also discussed.

Published
2004

4. Novel concept for THz-photomixer based on periodically doped heterostructures and quasi ballistic transport

Author

D. C. Driscoll, P. Pohl, M. Eckardt, Gottfried H. Döhler, Arthur C. Gossard, A. Friedrich, F. Renner, Stefan Malzer, Micah Hanson, A. Schwanhausser, Peter Kiesel, and L. Robledo

Subjects
Electron mobility, Materials science, business.industry, Terahertz radiation, Impedance matching, Physics::Optics, Carrier lifetime, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Gallium arsenide, Condensed Matter::Materials Science, chemistry.chemical_compound, chemistry, Ballistic conduction, Optoelectronics, Spontaneous emission, Antenna (radio), business
Abstract

Reports on a new concept for THz photomixers, which are not (as usually) frequency limited by the carrier lifetime in low-temperature-grown GaAs. The concept is based on ballistic electron transport in a periodically doped heterostructure (p-i-n-p-i-n-superlattice) and allows for impedance matching to the attached antenna.

Published
2003

5. Growth and microstructure of semi-metallic ErAs particles embedded in an In/sub 0.53/Ga/sub 0.47/As matrix

Author

Micah Hanson, Elisabeth Müller, A. C. Gossard, and D. C. Driscoll

Subjects
Materials science, business.industry, Composite number, Carrier lifetime, Epitaxy, Microstructure, Gallium arsenide, Photoexcitation, Wavelength, chemistry.chemical_compound, chemistry, Optoelectronics, business, Molecular beam epitaxy
Abstract

We report the growth by molecular beam epitaxy of composite epitaxial materials consisting of layers of semimetallic ErAs particles embedded in an In/sub 0.53/Ga/sub 0.47/As matrix. These structures are grown on [100]-oriented semi-insulating InP:Fe substrates at 490/spl deg/C. This material may serve as a fast photoconductor for applications at longer wavelengths than low temperature grown GaAs or ErAs:GaAs. In the ErAs:InGaAs material, the ErAs particles act as fast carrier recombination centers, while the In/sub 0.53/Ga/sub 0.47/As matrix allows for photoexcitation at wavelengths of 1.55 /spl mu/m.

Published
2003

Catalog

Books, media, physical & digital resources
See catalog results