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1.55 μm photoconductive THz emitters based on ErAs:In0.53Ga0.47As superlattices
- Source :
- 2010 IEEE Photonics Society Winter Topicals Meeting Series (WTM).
- Publication Year :
- 2010
- Publisher :
- IEEE, 2010.
-
Abstract
- ErAs:In 0.53 Ga 0.47 As superlattice THz emitters are fabricated and characterized at an excitation wavelength of 1.55 µm. Photocurrent-voltage characteristics, carrier lifetimes and bandwidth of the THz output are discussed as a function of the superlattice period.
- Subjects :
- Excitation wavelength
Materials science
business.industry
Terahertz radiation
Superlattice
Photoconductivity
Physics::Optics
Carrier lifetime
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Gallium arsenide
Condensed Matter::Materials Science
chemistry.chemical_compound
Optics
chemistry
Optoelectronics
Semiconductor superlattices
High Energy Physics::Experiment
Astrophysics::Earth and Planetary Astrophysics
business
Indium gallium arsenide
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2010 IEEE Photonics Society Winter Topicals Meeting Series (WTM)
- Accession number :
- edsair.doi...........235fedddf897ebea2a514352c3683221