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Temperature- and field-dependent electron and hole mobilities were simultaneously derived from admittance measurements on an InP/InGaAsP/InAs/InP long wavelength laser structure. Each carrier’s mobility was separated in the frequency domain due to the corresponding different relaxation times from C versus log f curves. Derived electron and hole mobilities followed the Poole–Frenkel-type field dependence, indicating the transport of carriers through hopping. Extracted thermal energy gap ( \Delta ) and disorder temperature ( T0 ) values were in mutual agreement with previous current density–voltage measurements and from the energy band diagram of the present structure, constructed from other studies in the literature by photoluminescence and photoluminescence excitation experiments. [ABSTRACT FROM PUBLISHER]

The properties of InP/InGaAsP/InAs/InP laser structure, mainly used in the fiber optic telecommunication industry, were investigated through current density-voltage- temperature ( $J$ – $V$ – $T$ ) measurement within dark and light conditions. Tunneling and generation-recombination carrier conduction mechanisms were identified within a junction bias voltage of 0–0.6 V. Above 0.6 V, Poole–Frenkel was the actual path in conduction and the mobility of carrier was determined quantitatively by means of temperature-dependent $J$ – $V$ curves in the space charge bias region. A thermal energy gap of 0.8 eV corresponded to the band gap of quantum dashes in which radiative recombination took place to emit a laser light at 1550 nm. [ABSTRACT FROM AUTHOR]