Discrimination of Carrier Conduction Mechanisms of InP/InGaAsP/InAs/InP Laser Structure Through $J$ – $V$ – $T$ Measurements.

The properties of InP/InGaAsP/InAs/InP laser structure, mainly used in the fiber optic telecommunication industry, were investigated through current density-voltage- temperature ( $J$ – $V$ – $T$ ) measurement within dark and light conditions. Tunneling and generation-recombination carrier conduction mechanisms were identified within a junction bias voltage of 0–0.6 V. Above 0.6 V, Poole–Frenkel was the actual path in conduction and the mobility of carrier was determined quantitatively by means of temperature-dependent $J$ – $V$ curves in the space charge bias region. A thermal energy gap of 0.8 eV corresponded to the band gap of quantum dashes in which radiative recombination took place to emit a laser light at 1550 nm. [ABSTRACT FROM AUTHOR]