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An electronically tunable reflection polarizer which exploits the dielectric anisotropy of nematic liquid crystals (LC) has been designed, fabricated and measured in a frequency band centered at 130 GHz. The phase agile polarizing mirror converts an incident slant 45^\circ signal upon reflection to right hand circular (RHCP), orthogonal linear (-45 ^\circ) or left hand circular (LHCP) polarization depending on the value of the voltage biasing the LC mixture. In the experimental set-up this is achieved by applying a low frequency bias voltage of 0 V, 40 V and 89 V respectively, across the cavity containing the LC material. [ABSTRACT FROM PUBLISHER]

UltraIow substrate crosstalk is demonstrated using a novel metal Faraday cage isolation scheme in silicon-on-insulator technology. Over ten times reduction in crosstalk is demonstrated up to 10 GHz, compared to previously reported substrate crosstalk suppression technologies. [ABSTRACT FROM AUTHOR]

Silicon-on-insulator (SOI) substrates incorporating tungsten silicide ground planes (GPs) have been shown to offer the lowest reported crosstalk figure of merit for application in mixed signal integrated circuits. The inclusion of the silicide layer in the structure may lead to stress or defects in the overlying SOI layers and resultant degradation of device performance. It is therefore essential to establish the quality of the silicon on the GPSOI substrate. MOS capacitor structures have been employed in this paper to characterize these GPSOI substrates for the first time. High quality MOS capacitor characteristics have been achieved with minority carrier lifetime of ∼ 0.8 ms. These results show that the substrate is suitable for device manufacture with no degradation in the silicon due to stress or metallic contamination resulting from the inclusion of the underlying silicide layer. [ABSTRACT FROM AUTHOR]