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This paper introduces a wavelength multiplexer (MUX) using the extraneous self-imaging (Ex_SI) phenomenon, which is not mentioned in multimode-interference theory. The Ex_SI phenomenon in silica-based multimode waveguides was experimentally studied. Then, using data for the Ex_SI phenomenon, the wavelength MUX for the wavelengths of 1310 and 1550 nm was developed. The optimum length of the multimode waveguide, with a width of 18 mum, was confirmed as a 3670- mum wavelength MUX. For the wavelengths of 1310 and 1550 nm, the excess losses were determined to be -0.4 and -0.45 dB, respectively, while the extinction ratios were 16.9 and 19.7 dB, respectively [ABSTRACT FROM PUBLISHER]

Based on a comprehensive theoretical model of a recently proposed novel technique known as adaptively modulated optical orthogonal frequency-division multiplexing (AMOOFDM), investigations are undertaken into the impact of an analog-to-digital converter involved in the AMOOFDM modem on the transmission performance of AMOOFDM signals in unamplified intensity-modulation and direct-detection (IMDD) multimode-fiber (MMF)-based links. It is found that signal quantization and clipping effects are significant in determining the maximum achievable transmission performance of the AMOOFDM modem. A minimum quantization bit value of ten and optimum clipping ratio of 13 dB are identified, based on which, the transmission performance is maximized. It is shown that 40-Gb/s-over-220-m and 32-Gb/s-over-300-m IMDD-AMOOFDM signal transmission at 1550 nm with loss margins of about 15 dB is feasible in the installed worst case 62.5-mum MMF links having 3-dB effective bandwidths as small as 150 MHz middot km. Meanwhile, excellent performance, robustness to fiber types, and variation in launch conditions and signal bit rates is observed. In addition, discussions are presented of the potential of 100-Gb/s AMOOFDM signal transmission over installed MMF links [ABSTRACT FROM PUBLISHER]

Optical thermometers have been widely investigated. Here, the temperature behavior of second harmonic generation (SHG) in periodically poled lithium niobate (PPLN) substrates is analyzed; indeed, the QPM tuning in PPLN devices and the obtained SHG efficiency depend on the crystal thermal expansion and dispersion, particularly in the case of guided propagation. Therefore, such devices are suitable to realize optical thermometers for demanding applications. This investigation originated with the request of a thermometer to be installed on the pantographs of high-speed trains. Therefore, it must be sturdy and reliable, but it has even to work in an EMD environment. The temperature behavior of the SHG was theoretically modeled and experimentally validated at 1550 nm, in both bulk propagation and APE channel waveguides. In the first case, by using a 10-mW source, which was obtained from a laser diode and a fiber amplifier, an accuracy of 0.3 degC was found. The pump power was about three orders of magnitude smaller in guided propagation. In view of testing on the trains, our investigation resulted in the design of a device without mechanical contacts with the input and output fibers. Since it works in free propagation, there are no serious alignment and packaging problems. The performances, which are expected to be the same of our tests, widely satisfy all the requirements for working effectively in a strongly hostile and EMD environment and for giving accurate measurements on a wide range of temperatures [ABSTRACT FROM PUBLISHER]

We have fabricated low-stress polyimide membranes for use as high-resolution variable optical attenuator (VOA). Polyimide membranes are assembled with fiber collimators to perform 3-D beam spoiling that varies the optical power with 0.01-dB resolution. The measured residual stress and Young's modulus of the polyimide membrane are 3.2 MPa and 15 GPa, respectively. The 41-mum deformation of the membrane is demonstrated by the electrostatic force with 170 volts. The 0.46-dB insertion loss and >15-dB dynamic range are achieved at 1550-nm wavelength [ABSTRACT FROM PUBLISHER]

Multifiber interconnection technology is one of the important keys to increase package density in optical networks. We present a novel releasable multifiber optical connectivity solution from the initial concept to the functional prototypes. This connectivity solution relies on a V-groove alignment platform and a microlens array. It can, e.g., provide reliable connections between a fiber array and an active optoelectronic component array or between a fiber array and an optical waveguide device. Moreover, within a free-space propagation region, it provides access to collimated optical beams, thus enabling various light manipulation options. The microlens V-groove fabrication process makes use of a dedicated assembly station that has been designed for automation. The microlens array is positioned on the platform, aligned relative to the V-grooves, and fixed with a low-cost adhesive bonding technology. Uniform and stable low losses for fiber-to-fiber coupling via two lenses have been achieved for single-mode and multimode fibers at wavelengths of 850, 1300, and 1550 nm. This connectivity solution represents, therefore, a versatile cost-effective technology for releasable connections of fiber arrays to any other optical multiport device [ABSTRACT FROM PUBLISHER]

We report triple wavelength demultiplexers adopting a thin-film filter (TFF) and a waveguide Bragg grating as a reflector for low-cost integrated optical triplexer transceivers deployed for the triple play service-based fiber-to-the-home (FTTH) networks. In the proposed demultiplexers, 1310- and 1550-nm lights were designed to be divided after passing the planar lightwave circuit-based directional coupler by half-cycle and full-cycle coupling actions, respectively. The 1490-nm light was reflected by a TFF or Bragg grating. The losses of the demultiplexers were less than 2.0 dB at all ports. The average crosstalk among the three lights for the demultiplexers was about -20 dB or better. Through a single reflector, the demultiplexer structures are significantly simplified, and cost is reduced. The proposed triple wavelength demultiplexers provide cost-effective and high-performance solutions for FTTH network systems [ABSTRACT FROM PUBLISHER]

Single-mode (SM) ultrashort optical interconnections between the fibers and waveguides using self-forming polymeric waveguides with low optical losses at 1300 and 1550 nm were demonstrated. The localized refractive index in the SM regime is estimated by measuring the surface topography induced by monomer diffusion during the waveguide formation. A loss less than -1 dB can be obtained from self-aligning SM-to-multimode (MM) fibers and SM-to-SM fibers interconnections, respectively. A self-formed waveguide-to-fiber interconnection is fabricated and measured with loss less than 0.2 dB at 1550 nm. The polymer waveguide relaxes the positioning requirements for single-mode chip-to-chip optical interconnections, showing great potential to improve the short-term yield and long-term reliability [ABSTRACT FROM PUBLISHER]

The monolithic integration of components holds promise to increase network functionality and reduce packaging expense. Integration also drives down yield due to manufacturing complexity and the compounding of failures across devices. Consensus is lacking on the economically preferred extent of integration. Previous studies on the cost feasibility of integration have used high-level estimation methods. This study instead focuses on accurate-to-industry detail, basing a process-based cost model of device manufacture on data collected from 20 firms across the optoelectronics supply chain. The model presented allows for the definition of process organization, including testing, as well as processing conditions, operational characteristics, and level of automation at each step. This study focuses on the cost implications of integration of a 1550-nm DFB laser with an electroabsorptive modulator on an InP platform. Results show the monolithically integrated design to be more cost competitive over discrete component options regardless of production scale. Dominant cost drivers are packaging, testing, and assembly. Leveraging the technical detail underlying model projections, component alignment, bonding, and metal-organic chemical vapor deposition (MOCVD) are identified as processes where technical improvements are most critical to lowering costs. Such results should encourage exploration of the cost advantages of further integration and focus cost-driven technology development [ABSTRACT FROM PUBLISHER]

To the best of our knowledge, for the first time, a single-crystal silicon carbide (SiC)-based minimally invasive smart optical sensor suited for harsh environments has been designed and demonstrated. The novel sensor design is based on an agile wavelength source, instantaneous single-wavelength strong two-beam interferometry, full optical power cycle data acquisition, free-space targeted laser beams, multiple single-crystal-thick SiC optical front-end chips, and multiwavelength signal processing for unambiguous temperature measurements to form a fast and distributed smart optical sensor system. Experiments conducted using a 1550-nm eye-safe band-tunable laser and a 300-mum coating-free thick SiC chip demonstrate temperature sensing from room temperature to 1000degC with an estimated average 1.3degC resolution. Applications for the proposed sensor include use in fossil fuel-based power systems, aerospace/aircraft systems, satellite systems, deep-space exploration systems, and drilling and oil mining industries [ABSTRACT FROM PUBLISHER]

A new concept for a 1 times 2 micromechanical optical switch with 10 mus of switching speed, 29 dB of ON/OFF ratio, and insertion loss of -7.22 dB for lambda=1550 nm and -4.96 dB for lambda=635 nm is presented. The idea is to insert a micromechanical switching mechanism composed of a vertical silicon cantilever beam inside a hollow planar optical waveguide structured in a silicon-on-insulator (SOI) wafer. The switching beam in the Y hollow waveguide is electrostatically actuated, which makes it deflect to one side or the other in order to redirect light in one of the two outputs. Switching times of less than 10 mus were measured with the produced devices. Compared to classical microelectromechanical systems (MEMS) switches, the concept presents the advantage to decrease the risks of misalignment between the mirror and the optical waveguide, as the two elements are defined in the same process step, and as the mirror position is less critical than for classical MEMS switches. It also limits the optical losses due to beam spreading that occurs in free-space configuration. Three different optical surfaces for the hollow waveguides were studied-a gold coating, an antiresonant reflecting optical waveguide (ARROW) optical coating, and bare hollow silicon [ABSTRACT FROM PUBLISHER]

In this paper, a model is presented for the simulation of integrated passively mode-locked InP-InGaAsP ring laser systems that include active components such as an amplifier and saturable absorber, and passive components that can be frequency dispersive. These dispersive components can have a complex frequency dependence, such as arrayed waveguide gratings (AWGs). The model is a lumped-element model that is used as a design tool for developing integrated femtosecond pulse sources with internal dispersion control. Simulations based on an InP/InGaAsP amplifier and absorber show the possibility of laser designs that are able to generate pulses with pulse durations down to 300 fs in the 1550-nm wavelength range. The designs are based on femtosecond laser systems in bulk and fiber optics that are published in the literature. The femtosecond laser sources presented here can be realized using existing InP-InGaAsP active-passive integration technology. [ABSTRACT FROM PUBLISHER]

A single-mode waveguide and a 1 × 3 multimode interference (MMI) power splitter are fabricated in hybrid zirconium (Zr)-doped sol-gel material by a microreplication technology with a polydimethylsiloxane (PDMS) replica. The power splitter, as optimized using a finite-difference beam-propagation method (FD-BPM) simulation with self-imaging effects, represents one of the first experimental demonstrations of a high-tolerance manufactured device using replication methods. The fabrication of the microreplicated power splitter demonstrates high-quality optical and geometrical properties. The local uniformity in thickness of the multimode waveguide is less than 1.0%, and the average surface roughness is about 5.35 nm. The measured splitting loss is less than 0.6 dB for both transverse polarizations at the 1550-nm wavelength. Experimental achievements indicate that the soft lithography technology allows for the performance of applications in integrated optical devices in Zr-doped sol-gel materials with high standards. [ABSTRACT FROM PUBLISHER]

In this paper, the tuning mechanism for a two-dimensional (2-D) guided-wave photonic-crystal (PhC) filter obtained by varying the angle-of-incidence in the waveguide plane is demonstrated. Modeling and design of the filter have been carried out by using the Bloch-Floquet formalism. The device shows a resonance wavelength at 1550 nm for the p=30 order at normal incidence. The free spectral range (FSR) is about 38 nm and can be spanned with an in-plane angle of incidence θ ranging from 0° to 14°. The full width at half maximum (FWHM) is in the range 0.14-0.18 nm. The filter performance is suitable for 50-GHz dense-wavelength-division-multiplexing (DWDM) systems and shows that variable oblique incidence can be exploited as a tuning mechanism. [ABSTRACT FROM PUBLISHER]

A novel optical signal modulation concept of adaptively modulated optical orthogonal frequency division multiplexing (AMOOFDM) is proposed, and a comprehensive theoretical model of AMOOFDM modems is developed. Numerical simulations of the transmission performance of the AMOOFDM signals are undertaken in unamplified multimode fiber (MMF)-based links using directly modulated distributed feedback (DFB) lasers (DMLs). It is shown that 28 Gb/s over 300 m and 10 Gb/s over 900 m transmission of intensity modulation and direct detection (IMDD) AMOOFDM signals at 1550 nm is feasible in DML-based links using MMFs with 3-dB effective bandwidths of 200 MHz·km. Apart from a higher signal capacity, AMOOFDM also has a greater spectral efficiency and is less susceptible to different launching conditions, modal dispersion, and fiber types, compared with all existing schemes. In addition, a large noise margin of about 15 dB is also observed. The bits of resolution of analog-to-digital converters (ADCs) and the cyclic prefix of AMOOFDM symbols are the main factors limiting the maximum achievable performance, on which the influence of DMLs is, however, negligible under the optimum operating condition. [ABSTRACT FROM PUBLISHER]

Polarization mode dispersion (PMD) is a potential limiting factor in long-haul high-speed optical communications, especially in systems beyond 10 Gb/s. Although considerable effort has been devoted to compensation methods for PMD, most of the research is restricted to a small bandwidth, within the limits of the first- and second-order PMD approximations. For the first-order approximation to be valid, the distortions induced by PMD must remain less than a few tenths of the pulse duration or the bit period for return-to-zero (RZ) or non-return-to-zero (NRZ) systems, respectively. In this work, as far as the authors know, the application of ultrafast optical pulse-shaping techniques for experimental broadband all-order PMD compensation is demonstrated for the first time. PMD is treated as arbitrary variations of state of polarization (SOP) and phase versus wavelength, in an all-order sense. Two fiber-pigtailed pulse shapers are implemented in a serial manner to compensate the polarization and phase spectra independently. The first step corrects the wavelength-dependent polarization states to a fixed wavelength-independent state. This reduces the PMD compensation problem to a generalized chromatic dispersion compensation problem. Consequently, equalization of the spectral phase in the second step restores the clean broadband pulse signal. In the experiments, compensation of subpicosecond pulses (14 nm bandwidth around 1550 nm) that are anomalously spread to more than 2 ps due to PMD is demonstrated. These results are potentially relevant for future ultra-high-speed time-division-multiplexed (TDM) systems. Research challenges that must be addressed to bring this approach to practical application are also briefly enumerated, and the potential for scaling to a range compatible with wavelength-division-multiplexed (WDM) systems is discussed. [ABSTRACT FROM PUBLISHER]

A long photonic-crystal fiber (PCF) with a low loss was successfully fabricated by first preparing a large pure silica glass preform. The fiber is 100 km long and has a low loss of 0.3 dB/km at 1550 nm. The fiber has a Rayleigh scattering coefficient of 0.85 dB/(km·μm4), which is the lowest value ever reported in a PCF. Using this fiber, the first penalty-free dispersion-managed soliton transmission at 10 Gb/s was achieved in a PCF. [ABSTRACT FROM PUBLISHER]

Optical rib waveguides with various widths and heights were fabricated on silicon-on-insulator (SOI) substrates. Silicon etching was based on dry etching with inductively coupled plasma (ICP)-type reactive ion etcher. The etching process was developed to ensure low optical losses. Propagation loss of 0.13±0.02 dB/cm was measured for the fundamental mode at the wavelength of 1550 nm in a curved 114-cm-long waveguide. The reflection losses were suppressed by applying atomic layer deposition (ALD) in the growth of antireflection coatings (ARCs). [ABSTRACT FROM PUBLISHER]

In this paper, the first fiber-coupled no-moving-parts scanning heterodyne interferometer design using a single acoustooptic device (AOD) is reported. The design features a high-stability inline reflective architecture with free-space-scanned minimally invasive sensing via a multizone reflective sensor chip. The common path fiber interconnection allows robust remoting of the compact sensing front end. A proof-of-concept sensing experiment measuring voltage-dependent birefringence is successfully conducted using a voltage-controlled nematic liquid crystal (NLC) sensor chip. The system features a 4.69-dB optical loss, a 200-MHz output frequency, and a 1550-nm eye-safe operation wavelength. Applications for the system include any fiber-remoted sensing using the proposed free-space minimally invasive interrogating optical beams. [ABSTRACT FROM PUBLISHER]

There is a growing need for compact, efficient integrated waveguide optical amplifiers for use in optoelectronic communication. Zn2Si0.5Ge0.5O4 (ZSG) doped with Er (ZSG-Er) is a promising new host material due to the high concentration of Er that can be incorporated and the high optical activity of the incorporated Er. In this paper, the absorption and emission cross sections of Er in ZSG-Er (to the authors' knowledge, for the first time) are measured both through photoluminescence spectra and direct gain and absorption measurements. Peak absorption and emission cross sections are about 3×10-24 m2 from a Landenburg-Fuchtbauer analysis of the photoluminescence spectra, comparable to measurements on other oxide-based glass amplifiers. The population statistics of the excited Er level, along with the excited-state lifetime, are determined through a novel frequency-domain method in which the spontaneous emission power at 1550 nm is measured as a function of frequency under a modulated 980-nm input. The determined lifetime of 2 ms is comparable to the 2.3 ms measured using a conventional pump-probe technique. The novel analysis technique yields the population statistics of the excited Er atoms and the lifetime of the excited Er state under given pumping conditions independent of the unknown and variable coupling in and out of the waveguide. This method predicts zero net gain at 70 mW, about what is observed. Comparison of calculated gain and absorption based on Er density and measured cross sections with measured gains suggest that only about 20%-30% of the Er in the material is optically active. A 4.7-cm-long sample demonstrated a signal enhancement of ∼13dB. Cavity characteristics were measured using an analysis of coherent reflection under no pumping. The facet reflectivity was determined to be 0.27, and the scattering/absorption loss was 1.05/cm, for a total distributed loss of 1.65/cm in a 4-cm cavity. These losses, compared with an estimated achievable gain of 0.25/cm under full inversion, suggest that optically pumped lasing at this concentration is not possible. Measurements of both the cross sections and population statistics, compared with actual gain and absorption properties, give insight into the - contribution of the Er dopant under different conditions and can be used to model and improve rare-earth-based amplifiers. [ABSTRACT FROM PUBLISHER]

Undoped fluoride glass slides have been exposed to pulsed 193-nm ultraviolet (UV) irradiation. Their absorption changes have been measured to evaluate UV-induced index changes using Kramers-Kronig relation. A layer-peeling polishing technique was applied to characterize the local UV-induced index change of highly absorbing glass. Index changes up to 1.75×10-4 have been evaluated with this method in fluorozirco-aluminate glass. Fluoroaluminate and fluorozirconate glass showed only small index changes of about 2.0×10-6 and 2.6×10-6 at a wavelength of 1550 nm. [ABSTRACT FROM PUBLISHER]

Semicooled operation at 40°C of electroabsorptive modulator integrated laser (EML) for intermediate reach communication has been demonstrated. Reproducible operation at the elevated temperature was achieved through a device parameter optimized based on the temperature dependence of the dc characteristics of EML and a design of multi-quantum-well structure providing both relevant output power and high-frequency bandwidth at 40°C. Good eye pattern and near zero chirp with the average power over 0 dBm are obtained at 40°C, with an estimated lifetime over 20 years. [ABSTRACT FROM PUBLISHER]

High-performance vertically illuminated Schottky photodiodes with indium-tin-oxide (ITO) Schottky layers were designed, fabricated, and tested. Ternary and quarternary III-V material systems (AlGaN-GaN, AlGaAs-GaAs, InAlGaAs-InP, and InGaAsP-InP) were utilized for detection in the ultraviolet (UV) (λ<400 nm), near-IR (λ∼850 nm), and IR (λ∼1550 nm) spectrum. The material properties of thin ITO films were characterized. Using resonant-cavity-enhanced (RCE) detector structures, improved efficiency performance was achieved. Current-voltage, spectral responsivity, and high-speed measurements were carried out on the fabricated ITO-Schottky devices. The device performances obtained with different material systems are compared. [ABSTRACT FROM PUBLISHER]

The design and fabrication of an electrostatic MEMS variable optical attenuator (VOA) is described. The VOA is a reflection type with a folded micromirror actuated by a comb-drive actuator. The VOA is fabricated by a simple single-mask process. One photolithography and subsequent deep silicon reactive ion etching define all the microstructures of the VOA. The folded micromirror structure can reduce the overall size of the device by enabling the parallel alignment of an input fiber and an output fiber. Lensed fibers are used to maximize the coupling efficiency and the ease of assembly. The electrooptic characteristics and dynamic characteristics of fabricated VOA are measured. The initial insertion loss is 0.5 dB at 1550 nm and the maximum attenuation is 45 dB, respectively. The polarization dependent loss is measured to be 0.2 dB at 20-dB attenuation. The response time for maximum attenuation is less than 5 ms. [ABSTRACT FROM PUBLISHER]

This paper presents the design, fabrication, and measurement results of a 2×2 microelectromechanical systems optical switch. The switch comprises an electromagnet and lensed fibers assembled with a micromachined movable vertical micromirror. The optical switch utilizes the out-of-plane motion of the vertical micromirror actuated by electromagnetic force compared to the comb-driven linear actuation achieved by the electrostatic force. At a wavelength of 1550 nm, the insertion loss of 0.2-0.8 dB and the polarization-dependent loss of 0.02-0.2 dB are measured. The switching time is 1 ms. A novel method of realizing a latchable optical switch using an electromagnetic actuator is also provided and verified. The latch mechanism is based on the latchability of the electropermanent magnet instead of the mechanical one using conventional arch-shaped leaf springs. [ABSTRACT FROM PUBLISHER]

A family of thin film interference filters is described that incorporates amorphous silicon layers for wide thermo-optic tunability and the potential for multiple cavity designs. Plasma enhanced chemical vapor deposition (PECVD) of hydrogenated amorphous silicon (a-Si:H) onto fused silica or crystalline silicon wafer substrates produces films with high index (n=3.71), low loss at 1500 nm (k<4×10-6), and thermo-optic index coefficients approximately ten times larger than those of the dielectric materials typically used in wavelength division multiplexing (WDM) filters. Pairing amorphous silicon with low index (n=1.77, k=1×10-6) silicon nitride companion layers followed by post-process annealing leads to multilayer film stacks which may be cycled up to 400 C without delamination or failure, resulting in thermal index modulations as large as 4% and enabling a wide variety of dynamic thin film device designs. In this paper we survey the range of device applications and show experimental demonstrations for two quite different classes of functionality. One class of filters is tunable in wavelength in the conventional sense. Single and dual-cavity narrowband filters are described with temperature coefficients of center wavelength 85-172 pm/°C in the 1550 nm WDM band and tuning ranges as large as 60 nm, an order of magnitude larger thermal tunability than for conventional thin film narrowband filters. A second class of filters is fixed in wavelength but switchable in transmission, based on hybrid structures which combine tunable semiconductor films and cavities with static dielectric films and cavities in an integrated coating design. To demonstrate the principle of a switchable add/drop filter, we fabricated a five-cavity, 117 layer, 200 GHz filter by combining a single cavity of a-Si:H/a-SixNy films deposited by PECVD with four cavities of dielectrics Ta2O5/SiO2 deposited by ion assisted e-beam evaporation. By varying the temperature, this device can be switched thermo-optically between transmission and reflection states at a fixed channel 1548.3 nm with a contrast ratio 18.4 dB. Stable devices can be obtained even with large internal temperature changes in microscopic volumes provided that layer- -to-layer and layer-to-substrate adhesion is robust, film stresses are well controlled through coefficients of thermal expansion matching, and devices are annealed at or above maximum operational temperatures. "Hitless" filters can be obtained by structuring thermo-optic filters in two independently heated portions. Thermo-optically actuated thin film semiconductor devices are manufacturable and testable on a wafer scale and may be packaged by methods adapted from those for conventional thin film filters. [ABSTRACT FROM PUBLISHER]

Single-mode perfluoropolymer waveguide structures exhibiting a polarization-independent ultra low loss of <0.05 dB/cm at 1310 nm and <0.07 dB/cm at 1550 nm with a Δn of 1.6% have been fabricated for the first time. These new low-loss structures indicate relatively high-power-handling reliability at 1310 and 1550 nm. Based on this, a highly efficient arrayed-waveguide grating multi-demultiplexer with a crosstalk of 30±2 dB and an insertion loss of 2.8±0.3 dB is realized. [ABSTRACT FROM PUBLISHER]

We present a compact integrated fiber laser with more than 200 mW of output power. It combines polarized fiber output with very narrow linewidth of less than 2 kHz. The coherence length of the laser is measured to be longer than 5 km. The laser features high mode stability of less than ±10 MHz over hours. The relative intensity noise (RIN) spectrum is dominated by a peak at the relaxation oscillation frequency and is shot-noise limited otherwise. The RIN peak at 1 MHz is reduced to ∼-130 dB/Hz by integrating a negative feedback circuit. In addition to thermal wavelength tuning, the laser frequency can be modulated at a bandwidth of up to 10 kHz via the piezoelectric effect. [ABSTRACT FROM PUBLISHER]

We have succeeded in fabricating a low-loss and long length photonic crystal fiber (PCF) by improvement of fabrication process. The fiber is 10 km long and has a lowest loss of 0.37 dB/km at 1550 nm ever reported. We also succeeded in reducing the OH absorption loss to 3 dB/km. This is almost the half of the value ever reported. Using the low-loss PCF, we performed the first DWDM transmission experiment. DWDM signal of 8×10 Gbit/s is successfully transmitted through the PCF. [ABSTRACT FROM PUBLISHER]

A polymer containing fine droplets of liquid crystal (LC) is investigated for obtaining an optical phase-shifting attenuator at 1550-nm wavelength. Two mixtures of liquid crystals and monomers are compared for a cell thickness of 15 μm. The first method uses nanosized LC droplets to achieve 2.29-rad phase shifting for an applied voltage of 230 Vrms. The second method uses microsized LC droplets to achieve 2.35-rad phase shifting for an applied voltage of 15 Vrms. Theoretical analysis of the phase shifting is developed. This optical property is used to achieve a variable optical attenuator (VOA) between two single-mode fibers. An optical architecture using graded index rod lenses and a pattern of photoresist polymer is presented. Typical characteristics of such VOA are: 12-dB range of attenuation, a maximum polarization dependence loss of 0.5 dB, 1.1-dB insertion loss, and a saturation voltage of 20 Vrms. [ABSTRACT FROM PUBLISHER]

An intensity modulation using a hybrid electrooptic (EO) polymer/sol-gel straight channel waveguide, useful in the 1550-nm wavelength regime is demonstrated without using Mach-Zehnder interferometric waveguide. The sol-gel waveguide is selectively buried so that a vertical transition into and out of an EO polymer coated on the sol-gel waveguide is arranged. The throughput ratio for transverse electric (TE) and transverse magnetic (TM) modes of the light coupled out of the hybrid waveguide is improved up to 0.9 dB with the help of reduced birefringence of the EO polymer after corona poling. We show that the fabrication process of such hybrid-type waveguides enables production of a phase modulator operating at 1550-nm wavelength. The fabricated straight channel waveguide modulator exhibits stable- and high-intensity modulation efficiency (82%) using a simple cross-polarization setup after the polarization dependence is reduced. We demonstrate an all wet-etching process to fabricate polymeric EO modulators. [ABSTRACT FROM PUBLISHER]

This paper reports our investigation on widely tunable fiber-ring lasers and broadband amplified spontaneous emission (ASE) light sources with thulium-doped fluoride fibers (TDFs). The experimental results for thulium-doped optical fiber amplifiers will also be discussed. We achieved widely tunable fiber lasers that had tuning ranges of 94 nm with 1550 nm + 1050 nm pump configurations and of 85 nm with 1550 nm + 1400 nm pump configurations, respectively. It was observed that the lasers oscillated under multilongitudinal-mode operation with linewidth of 400 MHz, signal-to-source noise ratio of 60 dB, and power stability of 0.003 dB for a laser output of 1 mW. A broadband ASE source with a power density of more than -15 dBm/nm between 1465 and 1535 nm was also demonstrated with a novel hybrid configuration by using both TDF and erbium-doped fiber. [ABSTRACT FROM PUBLISHER]

In this paper, we report on the design of a compact (≍ 226 μm) on-chip InGaAsP/InP polarization converter based on an asymmetric rib waveguide. Our theoretical analysis demonstrates that the device displays a conversion efficiency of < -25 dB (> 99.68% power conversion between orthogonal polarization) at 1550-nm wavelength with a nearly flat response over the optical C band. Regarding fabrication tolerances, we predict that the most sensitive design parameter is the waveguide width as the conversion efficiency drops to 10 dB for a deviation of ± 0.1 μm from the optimized value. [ABSTRACT FROM PUBLISHER]

We propose a simple method of characterizing the sensitivities of the cladding modes of an optical fiber to environmental conditions through the analysis of a single device. These sensitivities to conditions such as temperature, strain, and the refractive index of the surrounding medium are of particular relevance to the fabrication of long-period gratings (LPGs). The inferred sensitivities are all valid around the design wavelength of the analyzed fiber Bragg grating (FBG) device, and so can provide important design information for the manufacture of a LPG device that couples to a single or several cladding modes. To demonstrate the method, we use a FBG with a design wavelength of 1550 nm to determine the sensitivity of the cladding modes of a standard telecomm fiber to both temperature and strain. Using this information we infer the environmental sensitivity of any LPG fabricated in this fiber that operates around this wavelength. We design and fabricate LPGs to couple to selected cladding modes and measure the sensitivities of these devices directly. We find good agreement between the directly measured and inferred sensitivities. [ABSTRACT FROM PUBLISHER]

We have developed a microlaser encoder that can detect displacements relative to an external grating scale with a resolution on the order of 10 nm. Its size is only a few tens of a percent of a conventional encoder's. A long-lasting InP laser diode with a wavelength of 1550 nm was bonded, along with several photodiode chips, within an alignment accuracy of 1 μm onto a silicon planar lightwave circuit chip. The chip is 2.3 mm × 1.7 mm and includes a fluorinated polyimide lightwaveguide fabricated in advance. A wide gap of more than 600 μm was obtained between the external grating scale and the encoder despite the tiny size of the sensor. When used as a rotary encoder, the number of rotations could also be detected. Thus, this microencoder satisfies the market requirements for practical use. [ABSTRACT FROM PUBLISHER]

We have demonstrated the transmission performance of 10-Gb/s transmitters based on LiNbO3 modulator using semiconductor optical amplifiers (SOAs) as booster amplifiers. Utilizing the negative chirp converted in SOAs and self-phase modulation induced by high optical power, we can successfully transmit 10-Gb/s optical signals over 80 km through the standard single-mode fiber with the transmitter using SOAs as booster amplifiers. SOAs can be used for booster amplifiers with a careful adjustment of the operating conditions. In order to further understand an SOA's characteristics as a booster amplifier, we model SOAs and other subsystems to verify the experimental results. Based on the good agreement between the experimental and simulation results, we can find the appropriate parameters of input signals for SOAs, such as extinction ratio, rising/falling time, and chirp parameter to maximize output dynamic range and available maximum output power (Po,max). [ABSTRACT FROM PUBLISHER]

A rapidly tunable, polarization-independent, low-loss optical add-drop multiplexer (OADM) for the 1550-nm wavelength regime is reported. The four-port device consists of two input waveguides, a polarization beam splitter (PBS), two polarization conversion/electrooptic tuning waveguide sections, a second PBS and two output waveguides. The waveguides, which are single mode for both TE and TM polarizations, are fabricated on a LiNbO3 substrate by Ti diffusion. Spectral selection is based on phase-matched polarization conversion due to shear strain induced by a dielectric grating overlay film. An applied voltage tunes the device by changing the waveguide birefringence and hence the optical wavelength at which most efficient polarization conversion occurs. Tuning of 0.1 nm/V with a maximum range of 24 nm has been obtained. A tuning speed of 50 ns, corresponding to a rate of 0.128 nm/ns, has been achieved. Channel isolation is better than 24 dB. Fiber-to-fiber insertion loss <5.4 dB has been obtained and polarization independent loss (PDL) of 0.24 dB for both drop and through ports have been realized over the tuning range. Thermal tuning has also been demonstrated. [ABSTRACT FROM PUBLISHER]

A high-output-power 1550 nm polarization-insensitive semiconductor optical amplifier (SOA) was developed for use as a compact in-line optical amplifier. A very thin tensile-strained bulk structure was used for the active layer and active width-tapered spot-size converters (SSCs) were integrated on both input and output sides. The SOA module exhibited a high saturation output power of +17 dBm together with a low noise figure of 7 dB, large gain of 19 dB, and low polarization sensitivity of 0.2 dB for optical signals of 1550 nm wavelength. For the amplification of optical signals modulated at 10 Gb/s in the nonreturn-to-zero (NRZ) format, a good eye pattern without waveform distortion due to the pattern effect was obtained at an average output power of up to +12 dBm. Additionally, good amplification characteristics were demonstrated for the signal wavelength range corresponding to the C-band. [ABSTRACT FROM PUBLISHER]

We present a metal-organic-chemical-vapor-deposition-grown low-optical-insertion-loss InGaAsP/InP multiple-quantum-well electroabsorption modulator (EAM), suitable for both nonreturn-to-zero (NRZ) and return-to-zero (RZ) applications. The EAM exhibits a dynamic (RF) extinction ratio of 11.5 dB at 1550 nm for 3 Vp-p drive under 40-Gb/s modulation. The optical insertion loss of the modulator in the on-state is -5.2 dB at 1550 nm. In addition, the EAM also exhibits a 3-dB small-signal response (S21) of greater than 38 GHz, allowing it to be used in both 40-Gb/s NRZ and 10-Gb/s RZ applications. The dispersion penalty at 40 Gb/s is measured to be 1.2 dB over ±40 ps/nm of chromatic dispersion. Finally, we demonstrate 40-Gb/s transmission performance over 85 km and 700 km. [ABSTRACT FROM PUBLISHER]

Micro-ring wavelength filters and resonant modulators using polymer materials at 1300 nm and 1550 nm are analyzed, designed, and demonstrated. The rings are integrated with vertically coupled input and output waveguides. The devices are fabricated using optical lithography. Filters with a finesse of 141 and free spectral range of 5 nm at 1300 nm and finesse of 117 with a free spectral range (FSR) of 8 nm at 1550 nm are demonstrated. Ring resonators with a Q as high as 1.3 × 105 at 1300 nm are demonstrated. The filters can be temperature tuned at the rate of 14 GHz/°C. Resonant ring modulators, which use an electrooptic polymer, are demonstrated. The resonance wavelength voltage tunes at the rate of 0.82 GHz/V. The modulators have a bandwidth larger than 2 GHz. Using the resonant modulator, and open eye diagram at 1 Gb/s is demonstrated. [ABSTRACT FROM PUBLISHER]

In this paper, we discuss the conditions under which we can correctly extract a variety of module parameters of single mode bidirectional optoelectronic duplexer and diplexer modules during relatively slow thermal cycling between -40°C and +85°C. The obtained values of parameters such as tracking error, optical crosstalk, and the laser diode characteristic temperature have been compared for bidirectional modules from different manufacturers and the impact on these parameters of different interconnect techniques, like microoptic (Mo), silicon optical bench, and planar lightwave circuit technologies is discussed. It is shown that there is a conflict between small threshold currents and good temperature stability for InGaAsP-based Fabry-Perot laser diodes emitting at 1300 and 1550 nm. Then the results of spatially low coherence reflectometry for the different bidirectional module types are presented. [ABSTRACT FROM PUBLISHER]

An experimental demonstration of an energy limiter for short pulses at 1550 nm is reported. The limiter is based on an optical fiber Sagnac loop with an intraloop dichroic saturable absorber based on an InGaAsP-based waveguide with compressively strained multiple quantum wells. The saturable absorber is placed asymmetrically in the loop and is used as a Kerr-like nonlinear phase shifter. The device is operated in a novel dual polarization scheme, which offers some unique advantages. Excellent limiting for noise reduction purposes is demonstrated with the device. [ABSTRACT FROM PUBLISHER]

We report on a commercially reproducible silicon wafer with a high-reflectance buried distributed Bragg reflector (DBR). The substrate consists of a two-period DBR fabricated using a double silicon-on-insulator (SOI) process. The buried DBR provides a 90% reflecting surface. We have fabricated resonant cavity-enhanced Si photodetectors with 40% quantum efficiency at 860 nm and a full-width at half-maximum of 29 ps suitable for 10 Gbps data communications. We have also implemented double-SOI substrates with 90% reflectivity covering 1300 and 1550 nm for use in Si-based optoelectronics. [ABSTRACT FROM PUBLISHER]

Vertically coupled, wafer-bonded III-V semiconductor waveguide devices provide a means to obtain more powerful, compact photonic integrated circuits and allow for the combination of different materials onto a single chip. Various switching, filtering, multiplexing, and beam splitting devices in the InP-InGaAsP and GaAs-AlGaAs systems for signals in the 1550-nm range have been realized. An investigation of optimal optical add-drop multiplexer waveguide layout shapes has been performed through integration of the coupled-mode Riccati equation, providing potential sidelobe levels of less than -32 dB and filter bandwidths over 20% narrower than those of previous devices. Effects of nonideal processing conditions on filter performance are analyzed as well. [ABSTRACT FROM PUBLISHER]

We measured the continuous wave (CW) laser-induced damage threshold of single-mode fiber-optic connectors at 1550 nm. Clean standard physical contact and angled physical contact connectors did not show any evidence of damage for 10 min exposures of 1 W or 3 W. Defective connectors with scratched or undercut endfaces showed identical high-power tolerance as clean connectors without defects. Samples contaminated with carbon black-doped acrylate showed drastic optical failure signatures at approximately 50 mW. Contaminated connectors with expanded mode field diameters ranging from 20 to 62 μm showed higher failure thresholds than standard connectors with 10-μm spot sizes. We observed that the optical failure threshold power level (Pfailure) increased linearly with spot size for the highly contaminated connectors used in this study. [ABSTRACT FROM PUBLISHER]

Adaptive control in combination with ultrafast pulse shaping provides a compelling approach to harness events that occur on the fastest timescale available. This paper illustrates the application of adaptive pulse shaping to femtosecond pulse propagation at λ=1550 nm in single-mode optical fibers. The approach is illustrated first by through a numerical simulation of the technique. An experimental demonstration is described. The propagation of ~200-fs pulses is successfully achieved in the nonlinear regime by suitably preshaping the input pulse using an adaptive feedback loop [ABSTRACT FROM PUBLISHER]

A mode-adapted semiconductor optical amplifier (SOA) has been fabricated and packaged. At the gain peak, 1500 nm, the fiber to fiber gain was measured to be 32.5 dB. Statistics for eight packaged devices indicate that a fiber-to-fiber gain of 26.3 dB ± 1.3 dB and a saturation output power of 12.4 dBm ± 0.4 dBm are typical at a bias of 500 mA for λ = 1550 nm. Polarization sensitivity at 1550 nm was measured to be 1.1 dB ± 0.4 dB and the transverse electric (TE) polarization state noise figure (NF) was determined to be 7.0 dB ± 0.5 dB. The coupling loss was 1.3 dB ± 0.1 dB per facet. This SOA, with a 1.3-nm filter, was used as an optical preamplifier in a 10-Gb/s return-to-zero (RZ) system testbed with a pseudorandom binary sequence (PRBS) of 231 -1. A 14.5-dB improvement in receiver sensitivity was observed at a bit error rate (BER) of 10-11 [ABSTRACT FROM PUBLISHER]

Commercially available Er-doped fibers were irradiated with 5.6 and 28 MeV protons and 60Co gamma rays, up to levels of 50 krad. White-light transmission spectra under passive conditions (no pump or signal) were measured at several radiation levels for the six types of fibers that were tested. The spectra were used to evaluate the relative radiation sensitivity of the fibers and compare gamma versus proton-induced damage for two fiber types. The amount of radiation damage for the fibers was observed to scale inversely with the Ge concentration. Samples from three of the fiber types were configured as optical amplifiers using 980-nm and 1550-nm pump and input signals. In situ measurements of the gain, noise figure, and amplified spontaneous emission (ASE) were made as a function of pump power at several levels of radiation. A computer code, based on a conventional Er-doped fiber amplifier (EDFA) model, was written to simulate performance, using input data provided by the fiber vendor and anchored to measurements made prior to radiation. A comparison between the simulations and experimental data shows that, in certain fibers where the damage is significant, the radiation-induced loss determined from amplifier measurements can be substantially less than that determined from passive transmission spectra [ABSTRACT FROM PUBLISHER]

Based on a nonlinear optical polymer with a highly nonlinear chromophore (CLD) dispersed in an amorphous polycarbonate (APC), we have developed electrooptic (EO) polymer modulators operating at 1550-nm wavelength with low loss and good thermal stability. By incorporating polymer insulation layer, push-pull poling was successfully performed without film damages. We also demonstrated that the propagation loss of the EO polymer waveguide could be reduced as low as 1.2 dB/cm at 1550 nm when the large core waveguide structure was incorporated. The long-term reliabilities of the EO polymer modulator made of CLD/APC polymer were investigated. When the modulator was hermetically sealed in an inert gas, the Vπ change of a Mach-Zehnder modulator was negligible over 30 d of operation with 20-mW exposure to the waveguide input. In the thermal stability measurement, 25% Vπ increase was observed from the sample heated to 60°C over 40 d, though the sample left at room temperature showed no decay of nonlinearity [ABSTRACT FROM PUBLISHER]

A 16×16 arrayed waveguide grating (AWG) router with a channel spacing of 0.8 nm (100 GHz) operating around the 1550-nm wavelength has been fabricated using newly synthesized fluorinated polyethers. It has a good processibility and a high thermal stability up to 510°C. The propagation loss of the buried-channel waveguide is about 0.4 dB/cm at the 1550-nm wavelength. The on-chip insertion loss ranges from 5.5 to 11 dB and the crosstalk is less than -27 dB. The AWG router shows good cyclic rotation property of the wavelength channels with an error smaller than 0.03 nm [ABSTRACT FROM PUBLISHER]

We present a detailed experimental and theoretical study, showing that a novel nonzero dispersion-shifted fiber with negative dispersion enhances the capabilities of metropolitan area optical systems, while at the same time, reducing the system cost by eliminating the need of dispersion compensation. The performance of this dispersion-optimized fiber was studied using different types of optical transmitters for both 1310- and 1550-nm wavelength windows and for both 2.5-and 10-Gb/s bit rates. It is shown that this new fiber extends the nonregenerated distance up to 300 km when directly modulated distributed feedback (DFB) laser transmitters at 2.5 Gb/s are used. The negative dispersion characteristics of the fiber also enhance the transmission performance in metropolitan area networks with transmitters that use electroabsorption (EA) modulator integrated distributed feedback (DFB) lasers, which are biased for positive chirp. In the case of 10 Gb/s, externally modulated signals (using either EA-DFBs or external modulated lasers using Mach-Zehnder modulators), we predict that the maximum reach that can be accomplished without dispersion compensation is more than 200 km for both 100- and 200-GHz channel spacing. To our knowledge, this is the first demonstration of the capabilities of a nonzero dispersion-shifted fiber with negative dispersion for metropolitan applications [ABSTRACT FROM PUBLISHER]