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ITO-Schottky photodiodes for high-performance detection in the UV-IR spectrum.

ITO-Schottky photodiodes for high-performance detection in the UV-IR spectrum.

Authors :
Biyikli, N.
Kimukin, I.
Butun, B.
Aytur, O.
Ozbay, E.
Source :
IEEE Journal of Selected Topics in Quantum Electronics; Jul/Aug2004, Vol. 10 Issue 4, p759-765, 7p
Publication Year :
2004

Abstract

High-performance vertically illuminated Schottky photodiodes with indium-tin-oxide (ITO) Schottky layers were designed, fabricated, and tested. Ternary and quarternary III-V material systems (AlGaN-GaN, AlGaAs-GaAs, InAlGaAs-InP, and InGaAsP-InP) were utilized for detection in the ultraviolet (UV) (λ<400 nm), near-IR (λ∼850 nm), and IR (λ∼1550 nm) spectrum. The material properties of thin ITO films were characterized. Using resonant-cavity-enhanced (RCE) detector structures, improved efficiency performance was achieved. Current-voltage, spectral responsivity, and high-speed measurements were carried out on the fabricated ITO-Schottky devices. The device performances obtained with different material systems are compared. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISSN :
1077260X
Volume :
10
Issue :
4
Database :
Complementary Index
Journal :
IEEE Journal of Selected Topics in Quantum Electronics
Publication Type :
Academic Journal
Accession number :
52134812
Full Text :
https://doi.org/10.1109/JSTQE.2004.833977