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1. Digestive Inflammation: Role of Proteolytic Dysregulation

Author

Soufien Rhimi, Houda Boudaya, Vincent Mariaule, Souha Soussou, Juan Hernandez, Moez Rhimi, Emmanuelle Maguin, Aicha Kriaa, Adam Lesner, MICrobiologie de l'ALImentation au Service de la Santé (MICALIS), AgroParisTech-Université Paris-Saclay-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), This work received funding from the Microbiology and the Food Chain division (MICA) of the INRAE Institute through the metaprogramme MEM-Meta-omics and microbial ecosystems, and Titan-ANR number ANR-18-CE18-0019-03 and SerpinGuTarget ANR-CE16-0018-01 project, the CMCU-PHC Utique (No. 19G0819)-Campus France (41786NC) and the Twinning European project MICAfrica 952583., ANR-16-CE16-0018,EPITRACES,Traces épigénétiques neuronales des récompenses(2016), European Project: 9525833(1995), Microbiota Interaction with Human and Animal (MIHA), Université Paris-Saclay, INRAE, AgroParisTech, Micalis Institute, and University of Gdańsk (UG)

Subjects
0301 basic medicine, Proteases, medicine.medical_treatment, [SDV]Life Sciences [q-bio], Inflammation, Review, Serpin, Matrix metalloproteinase, Gut flora, digestive inflammation, gut microbiota, holobiont, protease, serpin, Catalysis, lcsh:Chemistry, Inorganic Chemistry, Pathogenesis, Serine, 03 medical and health sciences, 0302 clinical medicine, medicine, Animals, Humans, [SDV.BBM]Life Sciences [q-bio]/Biochemistry, Molecular Biology, Physical and Theoretical Chemistry, lcsh:QH301-705.5, Molecular Biology, Spectroscopy, Protease, biology, Organic Chemistry, General Medicine, Inflammatory Bowel Diseases, biology.organism_classification, Matrix Metalloproteinases, 3. Good health, Computer Science Applications, Cell biology, 030104 developmental biology, [SDV.MP]Life Sciences [q-bio]/Microbiology and Parasitology, lcsh:Biology (General), lcsh:QD1-999, Proteolysis, 030211 gastroenterology & hepatology, Serine Proteases, medicine.symptom
Abstract

International audience; Dysregulation of the proteolytic balance is often associated with diseases. Serine proteases and matrix metalloproteases are involved in a multitude of biological processes and notably in the inflammatory response. Within the framework of digestive inflammation, several studies have stressed the role of serine proteases and matrix metalloproteases (MMPs) as key actors in its pathogenesis and pointed to the unbalance between these proteases and their respective inhibitors. Substantial efforts have been made in developing new inhibitors, some of which have reached clinical trial phases, notwithstanding that unwanted side effects remain a major issue. However, studies on the proteolytic imbalance and inhibitors conception are directed toward host serine/MMPs proteases revealing a hitherto overlooked factor, the potential contribution of their bacterial counterpart. In this review, we highlight the role of proteolytic imbalance in human digestive inflammation focusing on serine proteases and MMPs and their respective inhibitors considering both host and bacterial origin.

Published
2021
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2. Combining multi-sensor satellite imagery to improve long-term monitoring of temporary surface water bodies in the Senegal river floodplain

Author

Ogilvie, Andrew, Poussin, Jean-Christophe, Bader, Jean-Claude, Bayo, Finda, Bodian, Ansoumana, Dacosta, Honoré, Dia, Djiby, Diop, Lamine, Martin, Didier, Sambou, Soussou, Gestion de l'Eau, Acteurs, Usages (UMR G-EAU), Centre de Coopération Internationale en Recherche Agronomique pour le Développement (Cirad)-Institut de Recherche pour le Développement (IRD)-AgroParisTech-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-Institut Agro - Montpellier SupAgro, Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro)-Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro), Institut Sénégalais de Recherches Agricoles [Dakar] (ISRA), Université Gaston Berger de Saint-Louis Sénégal (UGB), Université Cheikh Anta Diop [Dakar, Sénégal] (UCAD), ANR-18-LEAP-0002,WAGRINNOVA,Co-innovations across scales to enhance sustainable intensification, resilience, and food and nutritional security in water-managed agricultural systems in West Africa(2018), Centre de Coopération Internationale en Recherche Agronomique pour le Développement (Cirad)-Institut de Recherche pour le Développement (IRD)-AgroParisTech-Institut national d’études supérieures agronomiques de Montpellier (Montpellier SupAgro), and Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro)-Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
MODIS, [SDE]Environmental Sciences, lcsh:Q, optical remote sensing, Senegal River floodplain, water bodies, Sentinel-2, [SDU.STU.HY]Sciences of the Universe [physics]/Earth Sciences/Hydrology, lcsh:Science, spatial accuracy, Landsat, wetlands
Abstract

Accurate monitoring of surface water bodies is essential in numerous hydrological and agricultural applications. Combining imagery from multiple sensors can improve long-term monitoring; however, the benefits derived from each sensor and the methods to automate long-term water mapping must be better understood across varying periods and in heterogeneous water environments. All available observations from Landsat 7, Landsat 8, Sentinel-2 and MODIS over 1999–2019 are processed in Google Earth Engines to evaluate and compare the benefits of single and multi-sensor approaches in long-term water monitoring of temporary water bodies, against extensive ground truth data from the Senegal River floodplain. Otsu automatic thresholding is compared with default thresholds and site-specific calibrated thresholds to improve Modified Normalized Difference Water Index (MNDWI) classification accuracy. Otsu thresholding leads to the lowest Root Mean Squared Error (RMSE) and high overall accuracies on selected Sentinel-2 and Landsat 8 images, but performance declines when applied to long-term monitoring compared to default or site-specific thresholds. On MODIS imagery, calibrated thresholds are crucial to improve classification in heterogeneous water environments, and results highlight excellent accuracies even in small (19 km2) water bodies despite the 500 m spatial resolution. Over 1999–2019, MODIS observations reduce average daily RMSE by 48% compared to the full Landsat 7 and 8 archive and by 51% compared to the published Global Surface Water datasets. Results reveal the need to integrate coarser MODIS observations in regional and global long-term surface water datasets, to accurately capture flood dynamics, overlooked by the full Landsat time series before 2013. From 2013, the Landsat 7 and Landsat 8 constellation becomes sufficient, and integrating MODIS observations degrades performance marginally. Combining Landsat and Sentinel-2 yields modest improvements after 2015. These results have important implications to guide the development of multi-sensor products and for applications across large wetlands and floodplains.

Published
2020
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3. Fecal Serine Protease Profiling in Inflammatory Bowel Diseases

Author

Emmanuelle Maguin, Adam Lesner, Nizar Akermi, Amin Jablaoui, Moez Rhimi, Souha Soussou, Dominika Wołoszyn, Héla Mkaouar, Ali Gargouri, Magdalena Wysocka, Aicha Kriaa, Ali Amouri, Microbiota Interaction with Human and Animal (MIHA), MICrobiologie de l'ALImentation au Service de la Santé (MICALIS), Institut National de la Recherche Agronomique (INRA)-AgroParisTech-Institut National de la Recherche Agronomique (INRA)-AgroParisTech, and AgroParisTech-Université Paris-Saclay-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
0301 basic medicine, Microbiology (medical), Proteases, medicine.medical_treatment, [SDV]Life Sciences [q-bio], 030106 microbiology, Immunology, lcsh:QR1-502, microbiome, Gut flora, Microbiology, Holobiont, lcsh:Microbiology, Serine, 03 medical and health sciences, Feces, Cellular and Infection Microbiology, Medicine, Humans, [SDV.BBM]Life Sciences [q-bio]/Biochemistry, Molecular Biology, Microbiome, fecal proteases, Serine protease, Cathepsin, Protease, biology, Pancreatic Elastase, gut microbiota, business.industry, protease profiling, Brief Research Report, biology.organism_classification, Inflammatory Bowel Diseases, serine protease inhibitors, digestive system diseases, 3. Good health, 030104 developmental biology, Infectious Diseases, biology.protein, Serine Proteases, business
Abstract

International audience; Serine proteases are extensively known to play key roles in many physiological processes. However, their dysregulation is often associated to several diseases including inflammatory bowel diseases (IBD). Here, we used specific substrates to monitor fecal protease activities in a large cohort of healthy and IBD patients. Of interest, serine protease activity was 10-fold higher in IBD fecal samples compared to healthy controls. Moreover, functional analysis of these fecal proteolytic activities revealed that the most increased activities are trypsin-like, elastase-like and cathepsin G-like. We also show for the first time, an increase of proteinase 3-like activity in these samples compared to controls. Results presented here will guide further investigations to better understand the relevance of these peptidases in IBD.

Published
2020
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4. Study of Cr-Si Electrodes on Langasite Surface Acoustic Wave Resonators for High Temperature Sensing

Author

Streque, J., Soussou, M. A., Florian Bartoli, Sami Hage-Ali, Thierry Aubert, Thomas Mazingue, Marc Lomello, Omar Elmazria, Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire SYstèmes et Matériaux pour la MEcatronique (SYMME), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry]), Institut Jean Lamour (IJL), Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2018

5. Study of Cr5Si3 electrodes on langasite surface acoustic wave resonators for high temperature sensing

Author

Streque, J, Soussou, M.-A, Bartoli, F, Hage-Ali, Sami, Taguett, A, Aubert, Thierry, Mazingue, T, Lomello, M, Elmazria, O, Institut Jean Lamour (IJL), Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire SYstèmes et Matériaux pour la MEcatronique (SYMME), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry]), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), and AUBERT, Thierry

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Abstract

International audience; Many piezoelectric materials are viewed as potential candidates for high temperature SAW applications, including langasite (LGS) and AlN. Only a few metals or alloys can withstand such temperatures, among them platinum and iridium based alloys or nanocomposites. These materials cannot be considered when high quality factors are required, due to their higher resistivity and density. The (Cr, V)-Si system was previously studied, but has never been proposed as a solution for SAW electrodes, in spite of its high thermal stability, lower density (about 6 g/cm 3) and decent resistivity. This study focuses on the development of Cr5 Si3 alloy deposition for its use in LGS-based resonators, aiming at wireless applications.

Published
2018

6. Efficient Immobilization of Tyrosinase Enzyme on Layered Double Hydroxide Hybrid Nanomaterials for Electrochemical Detection of Polyphenols

Author

Christine Grauby-Heywang, Z. M. Baccar, Adel Kalboussi, Ibtissem Gammoudi, Touria Cohen-Bouhacina, Asma Soussou, Fabien Moroté, Laboratoire Ondes et Matière d'Aquitaine (LOMA), Université de Bordeaux (UB)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Biophysique [Monastir], Faculté de Médecine de Monastir [Tunisie], Laboratoire de Microélectronique et Instrumentations [Monastir], Faculté des Sciences de Monastir (FSM), Université de Monastir - University of Monastir (UM)-Université de Monastir - University of Monastir (UM), Institut National de Recherche et d'Analyse Physico-Chimique (INRAP), Cellule de transfert NanoPhyNov, and Tunisian Ministry of Higher Education and Scientific Research Fundings

Subjects
Materials science, [SDV.BIO]Life Sciences [q-bio]/Biotechnology, Layered double hydroxide LDH, Inorganic chemistry, chemistry.chemical_element, 02 engineering and technology, engineering.material, Electrochemistry, 01 natural sciences, Nanomaterials, chemistry.chemical_compound, Aluminium, [CHIM.ANAL]Chemical Sciences/Analytical chemistry, Electrical and Electronic Engineering, Instrumentation, ComputingMilieux_MISCELLANEOUS, Detection limit, [PHYS]Physics [physics], [PHYS.PHYS]Physics [physics]/Physics [physics], Electrochemical biosensors, 010401 analytical chemistry, Layered double hydroxides, Polyphenols, 021001 nanoscience & nanotechnology, Atomic force microscopy AFM, 0104 chemical sciences, chemistry, engineering, Hydroxide, Tyrosinase, 0210 nano-technology, Biosensor, Cobalt
Abstract

Gold screen-printed electrodes coated with thin films of layered double hydroxides containing cobalt and aluminium (Co1.57 Al(OH)xSO4, shortened as CoAl) have been investigated for the design of an electrochemical tyrosinase-based biosensor used for the detection of a complex mixture of polyphenols extracted from green tea. Physicochemical analyses show that the resulted biosensor exhibits very attractive characteristics: a high sensitivity, a large dynamic range (up to 1000 ng.mL $^{-1}$ ), and very low limits of detection (0.33 pg.mL $^{-1}$ and 0.03 pg.mL $^{-1}$ for oxidation and reduction, respectively).

Published
2017
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7. Hydrogen doped BaTiO3 films as solid-state electrolyte for micro-supercapacitor applications

Author

Z. Ben Cheikh, Sorin Vizireanu, M.A. Soussou, Kamel Khirouni, O. Gallot-Lavallée, Amine Achour, F. El Kamel, Laboratory of Physics of Materials and Nanomaterials Applied at Environment (LaPhyMNE), Université de Gabès, Laboratoire de Génie Electrique de Grenoble (G2ELab), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
Supercapacitor, Materials science, Hydrogen, Mechanical Engineering, Doping, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Metals and Alloys, Analytical chemistry, Oxide, chemistry.chemical_element, 02 engineering and technology, Electrolyte, Atmospheric temperature range, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, chemistry.chemical_compound, chemistry, Chemical engineering, Mechanics of Materials, Sputtering, Materials Chemistry, Fast ion conductor, 0210 nano-technology
Abstract

International audience; Solid electrolytes are important part of all-solid state energy systems that store electrical energy on the chip. They allow a direct incorporation of micro-storage component with simple device architecture while operating at higher temperatures compared to liquid electrolytes. However, solid electrolytes are usually deposited at high temperatures, exceeding the thermal budget of current semiconductor technology. Herein, we report on the synthesis of high performance BaTiO3:H films as solid state electrolyte in which we incorporate protons during a room temperature RF sputtering process. Drastic changes occur on chemical, structural and electrical properties of the films when they accommodate highly mobile and reactive protons. BaTiO3:H films have well-defined crystalline phases and display an optical bandgap which decreases by increasing the HMR in the sputtering gas. In addition, these films show two relaxation processes. The first, thermally activated with an energy around 0.5 eV, emerges at low temperature due to the proton diffusion within the oxide material. The diffusion of positively charged oxygen vacancies by overcoming an energetic barrier of about 1.1 eV yields to a second relaxation which takes place at relatively high temperature. By using carbon nanowalls as high effective area bottom electrode, we anticipate a large specific capacitance.

Published
2017
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8. Rhizobial diversity associated with the spontaneous legume Genista saharae in the northeastern Algerian Sahara

Author

Philippe de Lajudie, Khaled Chaich, Souhir Soussou, Noureddine Bouras, Lucette Maure, Abdelkader Bekki, Michael D. Holtz, Brigitte Brunel, Jean Claude Cleyet-Marel, Laboratoire Génie de l’eau et de l’Environnement en Milieu Saharien, Université de Ouargla, Laboratoire de Microbiologie, Faculté des Sciences, University of Oran Es-Sénia [Oran], École normale supérieure - Kouba-Alger (ENS Kouba-Alger), Département de Biologie, Faculté des Sciences de la Nature et de la Vie et Sciences de la Terre, Université de Ghardaïa, Alberta Agriculture and Rural Development, Field Crop Development Centre (FCDC), Laboratoire des symbioses tropicales et méditerranéennes (UMR LSTM), Centre de Coopération Internationale en Recherche Agronomique pour le Développement (Cirad)-Université Montpellier 1 (UM1)-Institut de Recherche pour le Développement (IRD)-Institut National de la Recherche Agronomique (INRA)-Université Montpellier 2 - Sciences et Techniques (UM2)-Université de Montpellier (UM)-Institut national d’études supérieures agronomiques de Montpellier (Montpellier SupAgro), Fertil'Innov Environnement, University of Oran Es-Senia [Oran] | Université d'Oran Es-Senia [Oran], and Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro)-Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro)

Subjects
0301 basic medicine, phylogénétique, sol, ved/biology.organism_classification_rank.species, algérie, Shrub, stabilisation du sol, Spontaneous legume, caractérisation génétique, N-2-fixation, genista saharae, biology, soil stabilization, Mesorhizobium, legume, genêtic variation, spontaneous legume, fixation de l'azote, Sinorhizobium, diversité génétique, General Agricultural and Biological Sciences, Algerian Sahara, food.ingredient, 030106 microbiology, Drought tolerance, housekeeping genes, Genista saharae, légumineuse, soil, dune, 03 medical and health sciences, food, Botany, Genetic variation, Genetic diversity, Housekeeping genes, desertization, sahara, préservation de l'environnement, ved/biology, rhizobial diversity, 15. Life on land, biology.organism_classification, 16S ribosomal RNA, 030104 developmental biology, Neorhizobium, Rhizobial diversity, désertification, [SDE.BE]Environmental Sciences/Biodiversity and Ecology
Abstract

Genista saharae is an indigenous shrub legume that spontaneously grows in the northeastern Algerian Sahara. It is known for efficient dune fixation and soil preservation against desertification, due to its drought tolerance and its contribution to sustainable nitrogen resources implemented by biological N-2-fixation. In this study, the root nodule bacteria of G. saharae were investigated using phenotypic and phylogenetic characterization. A total of 57 rhizobial strains were isolated from nodules from several sites in the hyper-arid region of Metlili and Taibet (east Septentrional Sahara). They all nodulate G. saharae species but they differed in their symbiotic efficiency and effectiveness. The genetic diversity was assessed by sequencing three housekeeping genes (atpD, recA and 16S rRNA). The majority of isolates (81 %) belonged to the genus Ensifer (previously Sinorhizobium), represented mainly by the species Ensifer meliloti. The next most abundant genera were Neorhizobium (17 %) with 3 different species: N. alkalisoli, N. galegae and N. huautlense and Mesorhizobium (1.75 %) represented by the species M. camelthorni. Most of the isolated strains tolerated up to 4%(w/v) NaCl and grew at 45 degrees C. This study is the first report on the characterization of G. saharae microsymbionts in the Algerian Sahara.

Published
2017
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9. Titanium nitride films for micro-supercapacitors: Effect of surface chemistry and film morphology on the capacitance

Author

Abdou Djouadi, Mohammad Islam, Thierry Brousse, Kaltouma Ait Aissa, Amine Achour, Laurent Le Brizoual, Raul Lucio Porto, Mohammed Boujtita, Mohamed-Akram Soussou, Discipline of Computer Science, Faculty of Science and Technology, Queensland University of Technology [Brisbane] (QUT), Chimie Et Interdisciplinarité : Synthèse, Analyse, Modélisation (CEISAM), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux Jean Rouxel (IMN), Université de Nantes (UN)-Université de Nantes (UN)-Ecole Polytechnique de l'Université de Nantes (EPUN), Institut d'Électronique et des Technologies du numéRique (IETR), Université de Nantes (UN)-Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique Théorique d'Orsay [Orsay] (LPT), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Réseau sur le stockage électrochimique de l'énergie (RS2E), Université de Nantes (UN)-Aix Marseille Université (AMU)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Collège de France (CdF (institution))-Université de Picardie Jules Verne (UPJV)-Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université de Pau et des Pays de l'Adour (UPPA)-Institut de Chimie du CNRS (INC)-Université de Montpellier (UM)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), Université de Nantes (UN)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), Université de Picardie Jules Verne (UPJV)-Institut de Chimie du CNRS (INC)-Aix Marseille Université (AMU)-Université de Pau et des Pays de l'Adour (UPPA)-Université de Nantes (UN)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Collège de France (CdF (institution))-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM), and Nantes Université (NU)-Université de Rennes 1 (UR1)

Subjects
Supercapacitor, Fabrication, Silicon, Renewable Energy, Sustainability and the Environment, business.industry, Energy Engineering and Power Technology, chemistry.chemical_element, Electrolyte, 7. Clean energy, Capacitance, Titanium nitride, law.invention, chemistry.chemical_compound, Capacitor, [SPI]Engineering Sciences [physics], chemistry, law, Electronic engineering, Optoelectronics, Electrical and Electronic Engineering, Physical and Theoretical Chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Porosity, business, ComputingMilieux_MISCELLANEOUS
Abstract

Electrochemical capacitors (EC) in the form of packed films can be integrated in various electronic devices as power source. A fabrication process of EC electrodes, which is compatible with micro-fabrication, should be addressed for practical applications. Here, we show that titanium nitride films with controlled porosity can be deposited on flat silicon substrates by reactive DC-sputtering for use as high performance micro-supercapacitor electrodes. A superior volumetric capacitance as high as 146.4 F cm −3 , with an outstanding cycling stability over 20,000 cycles, was measured in mild neutral electrolyte of potassium sulfate. The specific capacitance of the films as well as their capacitance retentions were found to depend on thickness, porosity and surface chemistry of electrodes. The one step process used to fabricate these TiN electrodes and the wide use of this material in the field of semiconductor technology make it promising for miniaturized energy storage systems.

Published
2015
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10. (Invited) In Depth Study of Ge Impact on Advanced SiGe PMOS Transistors

Author

Denis Rideau, Vincent Delaye, Assawer Soussou, Marc Juhel, M. Casse, Francois Andrieu, Remy Berthelon, Gerard Ghibaudo, Gilles Reimbold, Charles Leroux, Clement Tavernier, STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), S. Kar, M. Houssa, H. Jagannathan, K. Kita, D. Landheer, D. Misra and S. Van Elshocht, and Ducroquet, Frédérique

Subjects
Materials science, law, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Transistor, Electronic engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Engineering physics, PMOS logic, law.invention
Abstract

International audience; By using the most advanced devices, simulations and electrical characterizations as well as physicochemical tools, this paper revisit the role of SiGe layers in the improvement of performances of pMOS transistors. It is shown that an additional interfacial dipole effect due to Ge diffusion in the gate stack interfacial oxide needs to be added to the change of band structures in order to explain the dependence of threshold voltage on SiGe composition. The mobility gain brought by these alloys is then investigated. The relative role of Ge concentration, strain, interface states and strain relaxation is then discussed in detail.

Published
2014
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11. Modélisation et caractérisation des effets électriques de l’intégration du Ge dans les structures Métal/High-k/SiGe

Author

Soussou, Assawer, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics, Université de Grenoble, Gérard Ghibaudo, Denis Rideau, Charles Leroux, Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), and STAR, ABES

Subjects
SiGe, Caractérisation, Modélisation, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical parameters extraction, Oxide charges and dipoles, Charges et dipôles, Effective gate work function, Caracterization, Modeling, Travail de sortie effectif, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Extraction des paramètres électriques
Abstract

Maintaining good threshold voltage (VT) centering is a paramount challenge for CMOS technology. The SiGe introduction in bulk and FDSOI pFETs requires VT control for such devices. To this end, we have to extract accurately electrical parameters and to understand Ge integration effects in SiGe based pFETs. In this thesis, first, we have proposed extraction methods to determine VT, flat band voltage (VFB) and equivalent oxide thickness (EOT) parameters in bulk and FDSOI transistors. The extraction methods have been validated via Poisson-Schrodinger (PS) simulations and successfully applied to measurements. Second, we have highlighted and explained electric effects of Ge on pMOS gate stack parameters. Electrical characterizations compared with PS simulations have evidenced an additional effective work function increase, induced by Ge, related to interfacial dipoles. STEM, EELS and SIMS characterizations have demonstrated that dipoles are located at SiGe/IL interface., L'introduction du SiGe dans les pMOS (Bulk et FDSOI) exige un bon contrôle de la tension de seuil (VT). Ceci nécessite une extraction précise des paramètres électriques ainsi qu'une compréhension des effets électriques du Ge dans de tels dispositifs. Dans cette thèse, nous avons d'abord proposé des méthodes pour une identification précise des paramètres électriques du « gate stack »: VT, la tension de bande plate (VFB) et l'épaisseur équivalente d'oxyde (EOT). Ces méthodes ont été validées avec des simulations Poisson-Schrödinger (PS) et appliquées avec succès aux mesures. Dans un second temps, nous avons étudié les effets électriques du Ge sur les paramètres du « gate stack » des pMOS. La comparaison des caractérisations électriques (C-V) avec les simulations PS a montré un décalage supplémentaire du travail de sortie effectif qui croit avec le Ge. Des caractérisations STEM, EELS et SIMS ont prouvé que ce décalage est due à la présence de dipôles à l'interface SiGe/oxyde.

Published
2014

12. Nanostructuration and band gap emission enhancement of ZnO film via electrochemical anodization

Author

Nicolas Barreau, Eric Faulques, Laurent Le Brizoual, Mohamed Abdou Djouadi, Amine Achour, M. A. Soussou, K. Ait Aissa, Mohammad Islam, Mohammed Boujtita, Équipe Intégration de Systèmes de Gestion de l'Énergie (LAAS-ISGE), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Institut de Chimie des Milieux et Matériaux de Poitiers (IC2MP), Université de Poitiers-Institut national des sciences de l'Univers (INSU - CNRS)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratory of Physics of Materials and Nanomaterials Applied at Environment (LaPhyMNE), Université de Gabès, Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), College of Engineering, King Saud University, King Saud University [Riyadh] (KSU), Institut d'Électronique et des Technologies du numéRique (IETR), Nantes Université (NU)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Chimie Et Interdisciplinarité : Synthèse, Analyse, Modélisation (CEISAM), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), The authors would like to thank N. Stephant and S. Grolleau (IMN, Nantes) for their help during SEM studies. The authors also appreciate assistance from V. Fernandez and J. Hammon (IMN, Nantes) with XPS analysis. The authors would like to extend their sincere appreciation to the Deanship of Scientific Research at King Saud University for its funding of this research through the Research Group Project no. RGP-VPP-283., Institut national des sciences de l'Univers (INSU - CNRS)-Centre National de la Recherche Scientifique (CNRS)-Université de Poitiers-Institut de Chimie du CNRS (INC), Université de Nantes (UN)-Université de Rennes 1 (UR1), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Université de Nantes (UN)-Université de Nantes (UN)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université de Nantes (UN)-Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Photoluminescence, Silicon, Band gap, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, 01 natural sciences, Reference electrode, [SPI]Engineering Sciences [physics], Sputtering, 0103 physical sciences, Materials Chemistry, Electrochemical anodization, Thin film, 010302 applied physics, Band gap emission, Anodizing, business.industry, Metals and Alloys, Surfaces and Interfaces, ZnO thin film, Sputter deposition, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; We report fabrication of nanostructured zinc oxide (ZnO) thin films with improved optical properties through electrochemical anodization. The ZnO films were produced over silicon substrates via radio-frequency (RF) plasma magnetron sputtering technique followed by electrochemical treatment in potassium sulfate solution. After electrochemical treatment, the effect of applied potential on the band gap emission behavior of ZnO films was investigated for the potential drop of 1.8, 2.4 and 3.0 V against reference electrode of Ag/AgCl/0.1 M KCl. Depending on these values, ZnO films with different degrees of nonporous morphology, improved structural quality and oxygen-rich surface chemistry were obtained. The treatment also resulted in enhancement of band gap emission from ZnO films with the degree of enhancement depending on the applied potential. As compared to the as-deposited films, a maximum increase in the photoemission intensity by more than 2.2 times was noticed. In this paper, any changes in the structure, surface chemistry and band gap emission intensity of the RF sputter deposited films, as induced by the anodization treatment at differential potential values, are discussed.

Published
2014
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13. Soil nitrogen balance resulting from N fixation and rhizodeposition by the symbiotic association Anthyllis vulneraria/Mesorhizobium metallidurans grown in highly polluted Zn, Pb and Cd mine tailings

Author

Jean Claude Cleyet-Marel, Antoine Galiana, Stéphanie Mahieu, Souhir Soussou, Angélique Méjamolle, José Escarré, Brigitte Brunel, Centre d’Ecologie Fonctionnelle et Evolutive (CEFE), Université Paul-Valéry - Montpellier 3 (UM3)-Institut National de la Recherche Agronomique (INRA)-Centre international d'études supérieures en sciences agronomiques (Montpellier SupAgro)-École pratique des hautes études (EPHE)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD [France-Sud])-Institut national d’études supérieures agronomiques de Montpellier (Montpellier SupAgro), Laboratoire des symbioses tropicales et méditerranéennes (UMR LSTM), Centre de Coopération Internationale en Recherche Agronomique pour le Développement (Cirad)-Université Montpellier 1 (UM1)-Institut de Recherche pour le Développement (IRD)-Institut National de la Recherche Agronomique (INRA)-Université Montpellier 2 - Sciences et Techniques (UM2)-Université de Montpellier (UM)-Institut national d’études supérieures agronomiques de Montpellier (Montpellier SupAgro), Agence Nationale de la Recherche, Institut de Recherche pour le Développement (IRD [France-Sud])-Centre National de la Recherche Scientifique (CNRS)-École pratique des hautes études (EPHE)-Université de Montpellier (UM)-Institut national d’études supérieures agronomiques de Montpellier (Montpellier SupAgro)-Institut National de la Recherche Agronomique (INRA)-Centre international d'études supérieures en sciences agronomiques (Montpellier SupAgro)-Université Paul-Valéry - Montpellier 3 (UM3), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-École pratique des hautes études (EPHE), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre international d'études supérieures en sciences agronomiques (Montpellier SupAgro)-Institut National de la Recherche Agronomique (INRA)-Université Paul-Valéry - Montpellier 3 (UPVM)-Institut national d’études supérieures agronomiques de Montpellier (Montpellier SupAgro), Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro)-Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro)-Institut de Recherche pour le Développement (IRD [France-Sud]), and Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro)-Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro)

Subjects
0106 biological sciences, [SDV]Life Sciences [q-bio], Anthyllis vulneraria, Plant Science, 01 natural sciences, Bioremédiation, rhizobium, Metallophyte, Nitrogen fixation, Récupération des sols, vegetable, fixation nitrogénique, biology, Sol pollué, food and beverages, 04 agricultural and veterinary sciences, Legumes, Tailings, industrie minière, rhizodéposition, Rhizobium, Phytostabilization, Symbiotic bacteria, Festuca, Fixation de l'azote, métallophyte, Azote, Soil Science, Anthyllis, Plante antiérosive, Teneur en azote, Fertilisation, Métal lourd, phytostabilisation, Botany, P36 - Érosion, conservation et récupération des sols, P35 - Fertilité du sol, P34 - Biologie du sol, légume, biology.organism_classification, Rhizodeposition, Agronomy, 040103 agronomy & agriculture, Metallophytes, 0401 agriculture, forestry, and fisheries, 010606 plant biology & botany
Abstract

The association of the legume Anthyllis vulneraria and the grass Festuca arvernensis, was found to be very efficient for the phytostabilisation of highly multi-metal contaminated mine tailings. Our objective was to quantify the contribution of Anthyllis inoculated with its symbiotic bacteria Mesorhizobium metallidurans to the soil N pool and to test whether a starter nitrogen fertilization may improve symbiotic nitrogen fixation and the growth of Festuca. Methods Plants of Festuca and of Anthyllis inoculated with M. metallidurans were grown separately during eight months in pots filled with mine contaminated soil. Estimation of the N fluxes was realized using 15?N isotopic methods. Results Starter N fertilization (28 kg N ha?1) improved symbiotic N2 fixation and the growth of both species. Belowground N balance (N rhizodeposition - soil N uptake) of the non-fertilized Anthyllis at maturity was negative (?30.6 kg N ha?1). However, the amount of N derived from fixation, including above- and belowground parts, was 78.6 kg N ha?1, demonstrating the ability of this symbiotic association to improve soil N content after senescence. Conclusions i) soil N enrichment by the N2-fixing symbiotic association occurs after plant senescence, when decaying leaves and shoots are incorporated into the soil; ii) application of a starter fertilization is an efficient solution to improve phytostabilisation of highly contaminated sites.

Published
2014
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14. Understanding Ge impact on VT and VFB in Si1-xGex/Si pMOSFETs

Author

D. Barge, Gerard Ghibaudo, C. Leroux, D. Pellissier-Tanon, F. Abbate, Denis Rideau, G. Bidal, Clement Tavernier, O. Saxod, G. Reimbold, Alain Toffoli, A. Soussou, G. Romano, Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, business.industry, Gate stack, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Threshold voltage, Dipole, 0103 physical sciences, Optoelectronics, Work function, Flat band, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Voltage
Abstract

Display Omitted The Ge impact on the threshold voltage (VT) and the flat band voltage (VFB) of SiGe pMOSFETs is evaluated through a comparison of experiments and simulations with various SiGe thicknesses and Ge contents. Increasing Ge content shifts linearly (VT-VFB) in full agreement with Poisson-Schrodinger simulation results accounting for adequate band discontinuity and strain. An additional VFB shift is needed to match the measured CV in accumulation, revealing a work function modification or the presence of dipole in the gate stack due to Ge diffusion.

Published
2013
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15. Understanding Ge impact on VT and VFB in Si1-xGex/Si pMOSFETs

Author

Soussou, A., Cédric Leroux, Rideau, D., Toffoli, A., Romano, G., Saxod, O., Tavernier, C., Reimbold, G., gerard ghibaudo, STMicroelectronics [Crolles] (ST-CROLLES), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), CATRENE CT206: UTTERMOST: Ultimate enablement research on 32/20nm CMOS technology, Oficyna Wydawnicza PW, 2013, CEA-LETI/STMicroelectronics CMOS device program, Rasolofoniaina, Brigitte, Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Hardware_INTEGRATEDCIRCUITS, Hardware_PERFORMANCEANDRELIABILITY, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

Session 15: Gate stack materials for high mobility substrates; International audience

Published
2013

16. Regenerative braking in a small low cost plug-in hybrid electric vehicle for urban use

Author

Loukakou Bounzeki Mbemba, Destiny, Chetangny, Patrice Koffi, Dubas, Frédéric, Espanet, Christophe, Houndedako, Vincent Soussou, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), University of Abomey Calavi (UAC), and Femto-st, Energie

Subjects
[SPI.AUTO] Engineering Sciences [physics]/Automatic, [PHYS.MECA.THER] Physics [physics]/Mechanics [physics]/Thermics [physics.class-ph], [SPI.NRJ]Engineering Sciences [physics]/Electric power, [PHYS.MECA.THER]Physics [physics]/Mechanics [physics]/Thermics [physics.class-ph], [PHYS.MECA.MEFL] Physics [physics]/Mechanics [physics]/Fluid mechanics [physics.class-ph], [PHYS.MECA.MEFL]Physics [physics]/Mechanics [physics]/Fluid mechanics [physics.class-ph], [SPI.NRJ] Engineering Sciences [physics]/Electric power, [SPI.AUTO]Engineering Sciences [physics]/Automatic
Abstract

International audience; This paper presents the design, the control and the experimental tests of an ultra-capacitor pack used as an energy storage system in a small hybrid electric vehicle. This design consists in calculating the capacitance and the power of the capacitors, which are necessary to store kinetic energy during deceleration of the vehicle and then to accelerate the vehicle. NEDC driving cycle is considered to achieve a realistic design. Then a simple control of the UC energy is proposed and it is validated with simulations using Portunus software. Finally,experimental tests are achieved to verify the design and the control of the UC pack in the real plug-in hybrid electric vehicle.

Published
2013

17. Parameters extraction in SiGe/Si pMOSFETs using split CV technique

Author

Denis Rideau, Gerard Ghibaudo, G. Reimbold, C. Leroux, Alain Toffoli, Clement Tavernier, A. Soussou, G. Romano, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), IBM-STMicroelectronics-CEA/LETI-MINATEC Development Alliance, and Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Grenoble Alpes (UGA)

Subjects
Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, PMOS logic, MOSFET, Ge-Si alloys, 0103 physical sciences, Electronic engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, ComputingMilieux_MISCELLANEOUS, parameter extraction, business.industry, Extraction (chemistry), silicon, 021001 nanoscience & nanotechnology, Schrodinger equation, chemistry, Optoelectronics, Extraction methods, stochastic processes, elemental semiconductors, 0210 nano-technology, business, SiGe impact
Abstract

A new parameter extraction technique based on split CV is proposed for bulk MOSFETs. To this end, Poisson-Schrodinger simulations are compared to the measured split CV, confirming the validity of the extraction methods. The new methods have been successfully applied to Si and Si0.7Ge0.3/Si pMOS enabling the investigation of the Ge incorporation impact.

Published
2013
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18. Zinc accumulation patterns in four Anthyllis vulneraria subspecies supplemented with mineral nitrogen or grown in the presence of their symbiotic bacteria

Author

Souhir Soussou, José Escarré, Michel Lebrun, Brigitte Brunel, Jean Claude Cleyet-Marel, Stéphanie Mahieu, Hamadi Boussetta, Mohamed Banni, Laboratoire des symbioses tropicales et méditerranéennes (UMR LSTM), Centre de Coopération Internationale en Recherche Agronomique pour le Développement (Cirad)-Université Montpellier 1 (UM1)-Institut de Recherche pour le Développement (IRD)-Institut National de la Recherche Agronomique (INRA)-Université Montpellier 2 - Sciences et Techniques (UM2)-Université de Montpellier (UM)-Institut national d’études supérieures agronomiques de Montpellier (Montpellier SupAgro), Lab Biochim & Toxicol Environm, Institut Supérieur Agronomique Chott-Mériem (ISA), Centre d’Ecologie Fonctionnelle et Evolutive (CEFE), Institut de Recherche pour le Développement (IRD [France-Sud])-Centre National de la Recherche Scientifique (CNRS)-École pratique des hautes études (EPHE)-Université de Montpellier (UM)-Institut national d’études supérieures agronomiques de Montpellier (Montpellier SupAgro)-Institut National de la Recherche Agronomique (INRA)-Centre international d'études supérieures en sciences agronomiques (Montpellier SupAgro)-Université Paul-Valéry - Montpellier 3 (UM3), Agence Nationale de la Recherche-CES SyMetal from the Ministere de l'Enseignement Superieur et de la Recherche of the French Government, AVERROES program, European Commission, Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro)-Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-École pratique des hautes études (EPHE), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre international d'études supérieures en sciences agronomiques (Montpellier SupAgro)-Institut National de la Recherche Agronomique (INRA)-Université Paul-Valéry - Montpellier 3 (UPVM)-Institut national d’études supérieures agronomiques de Montpellier (Montpellier SupAgro), Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro)-Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro)-Institut de Recherche pour le Développement (IRD [France-Sud]), and Université Paul-Valéry - Montpellier 3 (UM3)-Institut National de la Recherche Agronomique (INRA)-Centre international d'études supérieures en sciences agronomiques (Montpellier SupAgro)-École pratique des hautes études (EPHE)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD [France-Sud])-Institut national d’études supérieures agronomiques de Montpellier (Montpellier SupAgro)

Subjects
0106 biological sciences, THLASPI-CAERULESCENS, [SDV]Life Sciences [q-bio], Zn tolerance, Soil Science, Anthyllis vulneraria, Anthyllis, Zn accumulation, Plant Science, Subspecies, 01 natural sciences, 03 medical and health sciences, CADMIUM, Symbiosis, Botany, PLANTS, Microbial inoculant, 030304 developmental biology, 0303 health sciences, biology, PHYTOREMEDIATION, Mesorhizobium, food and beverages, biology.organism_classification, SOILS, MODEL, Shoot, Metal-polluted soils, POPULATIONS, ARABIDOPSIS-HALLERI, HEAVY-METAL HYPERACCUMULATION, RECLAMATION, 010606 plant biology & botany, Symbiotic bacteria
Abstract

This work examines Zn accumulation in four Anthyllis vulneraria subspecies supplemented with mineral nitrogen or grown in the presence of their symbiotic bacteria. Anthyllis vulneraria subspecies were grown hydroponically in the presence of high levels of ZnSO4. The plants were either grown in symbiosis with one of two non-metallicolous or metallicolous Mesorhizobium inoculants or in the presence of KNO3. When exposed to 1,000 mu M Zn, shoot and root biomass of three out of our four Anthyllis subspecies cultivated with NO3 dropped significantly by about 24-28 %; carpatica, the fourth subspecies, was not affected. Subspecies carpatica Zn tolerance was confirmed when in symbiosis with the metallicolous strain. In the presence of 1,000 mu M Zn, the different Anthyllis subspecies concentrated more Zn in their roots than in their shoots and only subsp. carpatica accumulated a significant amount of Zn in its shoots. The most remarkable feature was the drastic decrease in Zn concentration in both roots (up to 2.5-3 fold) and shoots (2.6-fold) of subsp. carpatica exposed to 1,000 mu M Zn and nodulated whatever the Mesorhizobium strain used, compared to the N-grown plants. Our results bring new perspectives as regards phytostabilization, with the potential use of a rhizobium-inoculated leguminous subspecies displaying unusual Zn tolerance.

Published
2013
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19. Reduction of the losses on the electric distribution network Low tension of the Beninese Company of Electrical energy (SBEE)

Author

Houndedako, Vincent Soussou, Daï, Tometin Derrick, Chetangny, Patrice Koffi, Espanet, Christophe, Femto-st, Energie, Laboratoire d'Electrotechnique, de Télécommunication et d'Informatique Appliquée (LETIA), Université d’Abomey-Calavi (UAC), Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.AUTO] Engineering Sciences [physics]/Automatic, [PHYS.MECA.THER] Physics [physics]/Mechanics [physics]/Thermics [physics.class-ph], [SPI.NRJ]Engineering Sciences [physics]/Electric power, [PHYS.MECA.THER]Physics [physics]/Mechanics [physics]/Thermics [physics.class-ph], [PHYS.MECA.MEFL] Physics [physics]/Mechanics [physics]/Fluid mechanics [physics.class-ph], [PHYS.MECA.MEFL]Physics [physics]/Mechanics [physics]/Fluid mechanics [physics.class-ph], [SPI.AUTO]Engineering Sciences [physics]/Automatic, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; The authors approached in this article, the problems of the losses on the distribution network of electrical energy of the Beninese Company of Electrical energy more precisely in district NVENOUMEDE and various approaches for their minimization. According to the international standards in force, the maximum voltage drop of a network should not exceed 10% of the nominal voltage. At the conclusion of measurements taken by the authors, the voltage drop is about 79,52% between phase and neutral and of 68,42 between phases. Thus, the network causes enormous nuisances to the subscribers and maintains a permanent conflict between supplier and consumers. The various approaches simulated by the authors made passed the voltage drop fall of phase from 79,52% to 10,75% and the losses active from 243 kW to 33 kW respectively variations of 86,5% and 92,12%.

Published
2013

20. Measuring thermal conductivity of thin films and coatings with the ultra-fast transient hot-strip technique

Author

M. A. Djouadi, Y. Scudeller, M A Soussou, B. E. Belkerk, M. Carette, Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), and Université de Nantes (UN)-Université de Nantes (UN)

Subjects
010302 applied physics, Materials science, Acoustics and Ultrasonics, Thermal resistance, Analytical chemistry, 02 engineering and technology, Nitride, Nanosecond, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Thermal conduction, 01 natural sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Amorphous solid, Thermal conductivity measurement, Thermal conductivity, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Composite material, Thin film, 0210 nano-technology
Abstract

This paper reports the ultra-fast transient hot-strip (THS) technique for determining the thermal conductivity of thin films and coatings of materials on substrates. The film thicknesses can vary between 10 nm and more than 10 µm. Precise measurement of thermal conductivity was performed with an experimental device generating ultra-short electrical pulses, and subsequent temperature increases were electrically measured on nanosecond and microsecond time scales. The electrical pulses were applied within metallized micro-strips patterned on the sample films and the temperature increases were analysed within time periods selected in the window [100 ns–10 µs]. The thermal conductivity of the films was extracted from the time-dependent thermal impedance of the samples derived from a three-dimensional heat diffusion model. The technique is described and its performance demonstrated on different materials covering a large thermal conductivity range. Experiments were carried out on bulk Si and thin films of amorphous SiO2 and crystallized aluminum nitride (AlN). The present approach can assess film thermal resistances as low as 10−8 K m2 W−1 with a precision of about 10%. This has never been attained before with the THS technique.

Published
2012
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21. Réduction de la pauvreté par l'amélioration de la qualité de l'énergie électrique de la Société Béninoise d'Energie Electrique (SBEE)

Author

Houndedako, Vincent Soussou, Chetangny, Patrice Koffi, Espanet, Christophe, Adedjouma, Sèmiyou A, University of Abomey Calavi (UAC), Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), and Femto-st, Energie

Subjects
[SPI.AUTO] Engineering Sciences [physics]/Automatic, [PHYS.MECA.THER] Physics [physics]/Mechanics [physics]/Thermics [physics.class-ph], [SPI.NRJ]Engineering Sciences [physics]/Electric power, [PHYS.MECA.THER]Physics [physics]/Mechanics [physics]/Thermics [physics.class-ph], [PHYS.MECA.MEFL] Physics [physics]/Mechanics [physics]/Fluid mechanics [physics.class-ph], [PHYS.MECA.MEFL]Physics [physics]/Mechanics [physics]/Fluid mechanics [physics.class-ph], [SPI.NRJ] Engineering Sciences [physics]/Electric power, [SPI.AUTO]Engineering Sciences [physics]/Automatic
Abstract

International audience; Les auteurs ont étudié la qualité de l'énergie électrique au Bénin sous deux aspects, la forme d'onde et le taux d'harmoniques d'une part et l'énergie non distribuée d'autre part. Ces deux analyses sont faites à partir de mesures effectuées sur les réseaux de distribution de la SociétéBéninoise d'Energie Electrique (SBEE) à des moments critiques et précis de la journée sur une période relativement étendue. Au vu des résultats, les auteurs ont effectué des simulations, à l'aide du logiciel MATLAB, afin de dépolluer le réseau de la SBEE en vue de réduire les pertes sur le réseau et par voie de conséquence réduire le coût de consommation chez les abonnés. Une estimation de l'énergie non distribuée a été faite sur la région nord du Bénin. Les données recueillies auprès de la SBEE permettent d'apprécier ce point sur l'ensemble du pays. Réduire cette énergie non distribuée et améliorer la forme d'onde permettraient d'accroître la qualité du service et par voie de conséquence de contribuer à la réduction de la pauvreté du peuple béninois afin d'atteindre les Objectifs du Millénaire pour le Développement.

Published
2012

22. Structural-dependent thermal conductivity of aluminium nitride produced by reactive direct current magnetron sputtering

Author

A. Soussou, M. A. Djouadi, B. E. Belkerk, M. Carette, Y. Scudeller, Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), and Université de Nantes (UN)-Université de Nantes (UN)

Subjects
010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Silicon, Aluminium nitride, Wide-bandgap semiconductor, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Sputter deposition, Nitride, Conductivity, 021001 nanoscience & nanotechnology, 01 natural sciences, chemistry.chemical_compound, Thermal conductivity, chemistry, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Thin film, 0210 nano-technology
Abstract

International audience; This Letter reports the thermal conductivity of aluminium nitride (AlN) thin-films deposited by reactive DC magnetron sputtering on single-crystal silicon substrates (100) with varying plasma and magnetic conditions achieving different crystalline qualities. The thermal conductivity of the films was measured at room temperature with the transient hot-strip technique for film thicknesses ranging from 100 nm to 4000 nm. The thermal conductivity was found to increase with the thickness depending on the synthesis conditions and film microstructure. The conductivity in the bulk region of the films, so-called intrinsic conductivity, and the boundary resistance were in the range [120-210] W m(-1) K-1 and [2-30 x 10(-9)] K m(2) W-1, respectively, in good agreement with microstructures analysed by x-ray diffraction, high-resolution-scanning-electron-microscopy, and transmission-electron-microscopy.

Published
2012
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23. Epitaxial growth of ZnO thin films on AlN substrates deposited at low temperature by magnetron sputtering

Author

Pierre-Yves Jouan, B. Abdallah, L. Le Brizoual, Saâd Rahmane, A. Soussou, M. A. Djouadi, E. Gautron, Ali Soltani, Nicolas Barreau, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), and Université de Nantes (UN)-Université de Nantes (UN)

Subjects
Materials science, Mineralogy, 02 engineering and technology, Substrate (electronics), Epitaxy, 01 natural sciences, chemistry.chemical_compound, 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, Thin film, High-resolution transmission electron microscopy, 010302 applied physics, business.industry, Aluminium nitride, Surfaces and Interfaces, Sputter deposition, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Amorphous solid, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Layer (electronics)
Abstract

International audience; Hexagonal aluminium nitride (AlN) and zinc oxide (ZnO) thin films have been deposited by DC and RF reactive magnetron sputtering at room temperature. For a first set of samples, sputtered AlN films were deposited on silicon ZnO substrate. For a second set, ZnO films were deposited on AlN substrate. X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM) analysis of the synthesized AlN film on ZnO buffer layer have shown some amorphous zones close to the interface followed by a nanocrystalline layer exhibiting (10−10) and (0002) orientations of the hexagonal AlN crystalline phase. At the top of the film, a relatively well-crystallized layer with a single (0002) orientation has been observed. We have related the relatively bad interface to the presence of oxygen coming from ZnO substrate. This behaviour was different for the growth of ZnO film when AlN was used as substrate. In fact, we have observed thanks to HRTEM images and selected area electron diffraction patterns, that the ZnO film deposited on AlN substrate exhibits an epitaxial growth which is strongly dependent on the crystalline quality of AlN film.

Published
2010
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24. Influence of Ion Bombardment and Annealing on the Structural and Optical Properties of TiOx Thin Films Deposited in Inductively Coupled TTIP/O-2 Plasma

Author

Marie-Paule Besland, Bruno Bêche, T. Begou, Agnès Granier, Akram Soussou, K. Makaoui, Etienne Gaviot, Antoine Goullet, Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), Institut de Physique de Rennes (IPR), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Acoustique de l'Université du Mans (LAUM), Centre National de la Recherche Scientifique (CNRS)-Le Mans Université (UM), Université de Nantes (UN)-Université de Nantes (UN)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), and Le Mans Université (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Anatase, Materials science, Polymers and Plastics, Annealing (metallurgy), Analytical chemistry, Biasing, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Amorphous solid, [SPI]Engineering Sciences [physics], Carbon film, Rutile, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Thin film, 0210 nano-technology, Refractive index
Abstract

International audience; TiO2 films were deposited in a low-pressure inductively coupled rf plasma in O-2/titanium tetraisopropoxide (TTIP). First, depositions were realized at floating potential using nitrogen as bubbling gas. The structural and optical properties of the films were studied, before and after annealing at 450 degrees C under air. As expected, as-deposited films are amorphous, with a columnar structure. A post-annealing under flowing air allows obtaining partially crystallized films in anatase phase. Secondly, films were deposited using nitrogen and oxygen as bubbling gas. In both cases, TiO2-like films exhibit very similar structure and optical properties. Finally, the effect of biasing the substrate was investigated. An improvement of film proper-ties has been found for a bias voltage of -15 V at T < 100 degrees C: deposited TiO2 film is dense (3.7) with a high refractive index (n = 2.32 at 634 nm) and partially crystallized in rutile phase.

Published
2009
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25. Guides d'ondes pour l'optique intégrée par plasma PECVD

Author

Thomas Begou, Akram Soussou, Makaoui, K., Granier, Agnès A., Marie-Paule BESLAND, Bruno Bêche, Etienne Gaviot, Antoine Goullet, Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), Université de Rennes 1 (UR1), and Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
Published
2008

26. Synthèse par procédé plasma basse température et caractérisation de matériaux diélectriques pour l'optique intégrée

Author

Thomas Begou, Antoine Goullet, Granier, Agnès A., Marie-Paule BESLAND, Akram Soussou, Schneider, F., Lionel Camberlein, Etienne Gaviot, Bruno Bêche, Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), Institut de Physique de Rennes (IPR), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Université de Nantes (UN)-Université de Nantes (UN)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
Published
2008

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