1. Large-Area and High-Quality Epitaxial Graphene on Off-Axis SiC Wafers
- Author
-
M. Eddrief, Rachid Belkhou, Mathieu G. Silly, Fausto Sirotti, Claire Mathieu, Abdelkarim Ouerghi, Matthieu Picher, Souliman El Moussaoui, Massimiliano Marangolo, Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), ANR, and RTRA Triangle de la Physique
- Subjects
spectroscopy ,Materials science ,General Physics and Astronomy ,Nanotechnology ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,law.invention ,law ,General Materials Science ,Wafer ,Electronics ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,Graphene oxide paper ,vicinal SiC ,Graphene ,General Engineering ,low-energy electron microscopy ,021001 nanoscience & nanotechnology ,epitaxial graphene ,0104 chemical sciences ,Low-energy electron microscopy ,electronic properties ,scanning tunneling microscopy ,Sublimation (phase transition) ,Scanning tunneling microscope ,0210 nano-technology ,Graphene nanoribbons - Abstract
International audience; The growth of large and uniform graphene layers remains very challenging to this day due to the close correlation between the electronic and transport properties and the layer morphology. Here, we report the synthesis of uniform large-scale mono- and bilayers of graphene on off-axis 6H-SiC(0001) substrates. The originality of our approach consists of the fine control of the growth mode of the graphene by precise control of the Si sublimation rate. Moreover, we take advantage of the presence of nanofacets on the off-axis substrate to grow a large and uniform graphene with good long-range order. We believe that our approach represents a significant step toward the scalable synthesis of graphene films with high structural qualities and fine thickness control, in order to develop graphene-based electronic devices.
- Published
- 2012
- Full Text
- View/download PDF