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1. Quantized conductance in a one-dimensional ballistic oxide nanodevice

Author

Edouard Lesne, Nicolas Bergeal, S. Hurand, Agnès Barthélémy, Cheryl Feuillet-Palma, Christian Ulysse, Marco Salluzzo, Jerome Lesueur, Diogo C. Vaz, A. Jouan, Daniela Stornaiuolo, Gyanendra Singh, Manuel Bibes, Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-THALES, Jouan, A, Singh, G., Lesne, E., Vaz, D. C., Bibes, M., Barthélémy, A., Ulysse, C., Stornaiuolo, D., Salluzzo, M., Hurand, S., Lesueur, J., Feuillet-Palma, C., and Bergeal, N.

Subjects
Materials science, Quantum point contact, FOS: Physical sciences, 02 engineering and technology, Electron, 01 natural sciences, Condensed Matter::Materials Science, Ballistic conduction, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, Electrical and Electronic Engineering, 010306 general physics, Instrumentation, Quantum, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Superconductivity, Spintronics, Condensed matter physics, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Semiconductor, 0210 nano-technology, business, Fermi gas
Abstract

The electric-field effect control of two-dimensional electron gases (2-DEGs) has allowed nanoscale electron quantum transport to be explored in semiconductors. Structures based on transition metal oxides have electronic states that favour the emergence of novel quantum orders that are absent in conventional semiconductors and the 2-DEG formed at a LaAlO3/SrTiO3 interface—a structure in which superconductivity and spin–orbit coupling can coexist—is a promising platform to develop devices for spintronics and topological electronics. However, field-effect control of the properties of this interface at the nanoscale remains challenging. Here we show that a quantum point contact can be formed in a LaAlO3/SrTiO3 interface through electrostatic confinement of the 2-DEG using a split gate. Our device exhibits a quantized conductance due to ballistic transport in a controllable number of one-dimensional conducting channels. Under a magnetic field, the direct observation of the Zeeman splitting between spin-polarized bands allows the determination of the Lande g-factor, whose value differs strongly from that of the free electrons. Through source–drain voltage measurements, we also performed a spectroscopic investigation of the 3d energy levels inside the quantum point contact. The LaAlO3/SrTiO3 quantum point contact could potentially be used as a spectrometer to probe Majorana states in an oxide 2-DEG. A quantum point contact formed in the two-dimensional electron gas of a LaAlO3/SrTiO3 interface exhibits quantized conductance due to ballistic transport in a controllable number of one-dimensional conducting channels.

Published
2020
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2. Highly efficient and tunable spin-to-charge conversion through Rashba coupling at oxide interfaces

Author

Diogo C. Vaz, A.R. Fert, Laurent Vila, Manuel Bibes, A. Barthélémy, Juan-Carlos Rojas-Sánchez, Giuseppe Sicoli, Simón Oyarzún, M. Jamet, H. Jaffrès, Edouard Lesne, Jean-Philippe Attane, Eric Jacquet, J.-M. George, Yu Fu, Hiroshi Naganuma, Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES [France]-Centre National de la Recherche Scientifique (CNRS), SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de biologie et chimie des protéines [Lyon] (IBCP), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Reconnaissance Ionique et Chimie de Coordination (RICC), SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé (SYMMES), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), ANR-13-BS10-0005,SOspin,Courants de spin et couple de transfert de spin produits par des effets spin-orbites(2013), ANR-13-BS04-0006,LACUNES,Nouveaux gaz bidimensionnels d'électrons aux surfaces des oxydes des métaux de transition(2013), European Project: 615759,EC:FP7:ERC,ERC-2013-CoG,MINT(2014), Centre National de la Recherche Scientifique (CNRS)-THALES, Institut de Chimie du CNRS (INC)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, FOS: Physical sciences, 02 engineering and technology, Electronic structure, Electron, 01 natural sciences, Condensed Matter::Materials Science, 0103 physical sciences, General Materials Science, 010306 general physics, ComputingMilieux_MISCELLANEOUS, Spin-½, Coupling, Condensed Matter - Materials Science, Spintronics, Condensed matter physics, Mechanical Engineering, Materials Science (cond-mat.mtrl-sci), General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Ferromagnetism, Mechanics of Materials, Spin Hall effect, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Condensed Matter::Strongly Correlated Electrons, 0210 nano-technology, Rashba effect
Abstract

The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities and devices, some of which do not require any ferromagnetic material. However, the interconversion efficiency of SHE and ISHE (spin Hall angle) is a bulk property that rarely exceeds ten percent, and does not take advantage of interfacial and low-dimensional effects otherwise ubiquitous in spintronics hetero- and mesostructures. Here, we make use of an interface-driven spin-orbit coupling mechanism - the Rashba effect - in the oxide two-dimensional electron system (2DES) LaAlO3/SrTiO3 to achieve spin-to-charge conversion with unprecedented efficiency. Through spin-pumping, we inject a spin current from a NiFe film into the oxide 2DES and detect the resulting charge current, which can be strongly modulated by a gate voltage. We discuss the amplitude of the effect and its gate dependence on the basis of the electronic structure of the 2DES., Comment: Final version just published in Nature Materials. Contact author for a reprint

Published
2016
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3. Top-gated field-effect LaAlO 3 /SrTiO 3 devices made by ion-irradiation

Author

Maxime Malnou, Edouard Lesne, Nicolas Bergeal, C. Ulysse, Myriam Pannetier-Lecoeur, Nicolas Reyren, Gyanendra Singh, S. Hurand, Agnès Barthélémy, Manuel Bibes, Cheryl Feuillet-Palma, Javier E. Villegas, A. Jouan, Jerome Lesueur, Laboratoire de Physique et d'Etude des Matériaux (UMR 8213) (LPEM), Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), Centre National de la Recherche Scientifique (CNRS)-THALES, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Laboratoire Nano-Magnétisme et Oxydes (LNO), Service de physique de l'état condensé (SPEC - UMR3680), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, and THALES [France]-Centre National de la Recherche Scientifique (CNRS)

Subjects
Quantum phase transition, Superconductivity, Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, business.industry, Field effect, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Ion, Electrical resistivity and conductivity, 0103 physical sciences, Optoelectronics, Electric potential, Irradiation, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, business, Leakage (electronics)
Abstract

International audience; We present a method to fabricate top-gated field-effect devices in a LaAlO3/SrTiO3 two-dimensional electron gas (2-DEG). Prior to the gate deposition, the realisation of micron size conducting channels in the 2-DEG is achieved by an ion-irradiation with high-energy oxygen ions. After identifying the ion fluence as the key parameter that determines the electrical transport properties of the channels, we demonstrate the field-effect operation. At low temperature, the normal state resistance and the superconducting Tc can be tuned over a wide range by a top-gate voltage without any leakage. A superconductor-to-insulator quantum phase transition is observed for a strong depletion of the 2-DEG.

Published
2016
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