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15 results on '"Decobert, Jean"'

1. Improving the understanding of the KPFM technique through analyses of InP multilayers with associated modelling

Author

da Lisca, Mattia, Connolly, J.P., Alvarez, J, Vaissiere, Nicolas, Decobert, Jean, Kleider, Jean-Paul, Laboratoire Génie électrique et électronique de Paris (GeePs), CentraleSupélec-Sorbonne Université (SU)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF), Alcatel-Thales III-V Lab (III-V Lab), THALES, and KLEIDER, Jean-Paul

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2021

2. 25 Gb/s Colorless Transmitter Based on Reflective Electroabsorption Modulator for Ultra-dense WDM-PON Application

Author

Atra, Kebede, Cerulo, Giancarlo, Provost, Jean-Guy, Mekhazni, Karim, Calo, Cosimo, Pommereau, Frédéric, Gomez, Carmen, Fortin, Catherine, Decobert, Jean, Martin, Florence, Derouin, Estelle, Caillaud, Christophe, Erasme, Didier, Ware, Cédric, Mallecot, Franck, Achouche, Mohand, Télécommunications Optiques (GTO), Laboratoire Traitement et Communication de l'Information (LTCI), Institut Mines-Télécom [Paris] (IMT)-Télécom Paris-Institut Mines-Télécom [Paris] (IMT)-Télécom Paris, Département Communications & Electronique (COMELEC), Télécom ParisTech, and HAL, TelecomParis

Subjects
[INFO.INFO-NI]Computer Science [cs]/Networking and Internet Architecture [cs.NI], [INFO.INFO-NI] Computer Science [cs]/Networking and Internet Architecture [cs.NI], [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

3. Low temperature plasma epitaxy of Silicon on III-V

Author

Hamon, Gwenaëlle, Vaissière, Nicolas, Chen, Wanghua, Alvarez, J, Maurice, Jean-Luc, Decobert, Jean, Kleider, Jean-Paul, Roca i Cabarrocas, Pere Roca i Cabarrocas, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, THALES [France]-ALCATEL, and KLEIDER, Jean-Paul

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2018

4. Heteroepitaxial growth of Silicon on GaAs via low temperature plasma-enhanced chemical vapor deposition

Author

Hamon, Guénaëlle, Vaissière, Nicolas, Cariou, Romain, Chen, Wanghua, Alvarez, J, Maurice, Jean-Luc, Decobert, Jean, Kleider, Jean-Paul, Roca i Cabarrocas, Pere Roca i Cabarrocas, KLEIDER, Jean-Paul, Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID, Total S.A. Renewables, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thales III-V Lab (III-V Lab), THALES, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, and ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013)

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT] Engineering Sciences [physics]/Materials, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

National audience

Published
2018

5. Modelling of multijunction cells

Author

Lachaume, Raphaël, Foldyna, Martin, Hamon, Gwenaëlle, Vaissière, Nicolas, Cariou, Romain, Decobert, Jean, Roca I Cabarrocas, Pere, Alvarez, J, Kleider, Jean-Paul, Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Total New Energies, Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Lachaume, Raphaël, and THALES-ALCATEL

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.TRON] Engineering Sciences [physics]/Electronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2016

6. Si1-xGex alloys on III-V (100): first steps in film growth by low temperature PECVD epitaxy

Author

Vaissière, Nicolas, Hamon, Gwenaëlle, Lachaume, Raphaël, Chen, Wanghua, Decobert, Jean, Alvarez, J, Kleider, Jean-Paul, Roca I Cabarrocas, Pere, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), THALES [France]-ALCATEL, Lachaume, Raphaël, and Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.TRON] Engineering Sciences [physics]/Electronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

National audience

Published
2016

7. Investigation of 1.3 μm AlGaInAs multi-quantum wells for electro-absorption modulated laser

Author

Binet, Guillaume, Decobert, Jean, Lagay, Nadine, Chimot, Nicolas, Kazmierski, Christophe, Institut Jean le Rond d'Alembert (DALEMBERT), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, and THALES [France]-ALCATEL

Subjects
[PHYS]Physics [physics], multiquantum well, III-V semiconductors, quantum confined Stark effect, AlGaInAs, electro-absorption modulator
Abstract

International audience; Monolithic PIC transmitters using the prefixed optical phase switching concept for BPSK modulation format have been shown promising at 1.55 µm band. These devices could also be crucial for short reach connections and access networks. With this aim, we are studying basic quantum well designs for a laser and an electro-absorption modulator switch to be integrated by selective area growth into PICs at 1.3 µm. Photocurrent measurements and band offset modeling have been performed to determine the MQW stack well-fitted for this application. Broad area laser measurements have also been checked on these structures to verify the material lasing properties. A 6 nm thick well with low barrier seems to be the best trade-off between absorption and shift for 1.3 µm EAM and it also gives good lasing properties.

Published
2016

8. In-Depth Analysis of III-V/Epi-SiGe Tandem Solar Cell Performance Including Advanced Light Trapping Schemes

Author

Lachaume, Raphaël, Foldyna, Martin, Hamon, Gwenaëlle, Decobert, Jean, Cariou, Romain, Cabarrocas, Pere Roca I., Alvarez, José, Kleider, Jean-Paul, KLEIDER, Jean-Paul, Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Total New Energies, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, ARCSIS, ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), and THALES [France]-ALCATEL

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, Si GaAs, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Tandem solar cell, [SPI.MAT] Engineering Sciences [physics]/Materials, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.MAT]Engineering Sciences [physics]/Materials, TCAD Simulation, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, III V compounds, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Si Ge alloy, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; The growing interest in new concepts of III-V/Si tandem solar cells arises from the need to reduce the cost of high efficiencyIII-V based multi-junctions by using low cost substrates such as silicon. Because it is still a challenge to grow III-V materials directlyonto Si wafers due to thermal expansion and lattice mismatch issues, other ways of combining III-V compounds and Si have beendeveloped. Among them is the reversed metamorphic concept recently proposed by Cariou et al.. In the latter approach, the Si bottomcell is deposited by low temperature PECVD (

Published
2016

9. Realistic simulation of III-V/epi-SiGe tandem solar cells

Author

Lachaume, Raphaël, Cariou, Romain, Decobert, Jean, Foldyna, Martin, Hamon, Gwenaelle, Cabarrocas, Pere Roca I., Alvarez, J, Kleider, Jean-Paul, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), THALES-ALCATEL, KLEIDER, Jean-Paul, and Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2015

10. SiGe Low Temperature Epitaxy by PECVD on III-V MOVPE Grown Material for High Efficiency Tandem Solar Cell Applications

Author

Decobert, Jean, Cariou, Romain, Louarn, Kevin, Fortin, Catherine, Lachaume, Raphaël, Alvarez, J, Kleider, Jean-Paul, Foldyna, Martin, Cabarrocas, Pere Roca I., Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), THALES [France]-ALCATEL, KLEIDER, Jean-Paul, and Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2015

11. Realistic modeling of tandem cells formed by low temperature PECVD epitaxy of silicon-germanium on gallium arsenide

Author

Lachaume, Raphaël, Cariou, Romain, Decobert, Jean, Foldyna, Martin, Hamon, Gwenaelle, Cabarrocas, Pere Roca I., Alvarez, J, Kleider, Jean-Paul, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), THALES [France]-ALCATEL, KLEIDER, Jean-Paul, and Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NRJ] Engineering Sciences [physics]/Electric power, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; Multijunction solar cells based on III-V compounds have by far the highest conversion efficiency. However, the fabrication cost is very high. An attractive solution to lower the cost while maintaining high efficiencies is to design multijunctions on cheaper substrates such as silicon [1]. Different routes have been taken to cope with lattice mismatch issues between Si and III-Vs: epitaxial growth of GaAs on Si with or without buffer layers or non-epitaxial techniques such as mechanical stacking. A novel approach has been recently presented consisting in direct epitaxial growth of thin Si or SiGe layers on GaAs by low temperature PECVD [2], where the high crystal quality reported opens a new way for making III-V/Si tandem solar cells. For a given thickness of the epi-Si or epi-SiGe bottom cell (typically less than 5 µm), it is crucial to find the optimum composition of the III-V top cell. This depends on both optical and electrical properties of the entire structure. Actually, the common efficiency calculations are based on the ideal radiative limit [1] and suffer from limiting assumptions, e.g. complete absorption in the sub-cells, no non-radiative recombination in the bottom cell. In this paper we thus propose an extensive numerical simulation study using TCAD tools to calculate realistic maximum efficiencies and facilitate the design of III-V/epi-SiGe tandem cells. [1] J. Connolly et al., Prog. Photovolt: Res. Appl 22 (2014) 810 [2] R. Cariou et al., 40th IEEE PVSC (2014)

Published
2015

12. Towards realistic simulation of the novel III-V/epi-Si tandem solar cell concept

Author

Lachaume, Raphaël, Cariou, Romain, Decobert, Jean, Foldyna, Martin, Hamon, Gwenaëlle, Roca I Cabarrocas, Pere, Alvarez, J, Kleider, Jean-Paul, Lachaume, Raphaël, Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, IPVF, ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), and THALES [France]-ALCATEL

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Si, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT] Engineering Sciences [physics]/Materials, multijunction solar cell, tandem solar cell, III-V, simulation, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics, low temperature epitaxy
Abstract

International audience; Multijunction solar cells based on III-V compounds have by far the highest conversion efficiency. However, the fabrication cost is very high. An attractive solution to lower the cost while maintaining high efficiencies is to design multijunctions on cheaper substrates such as silicon. Different routes have been taken to cope with lattice mismatch issues between Si and III-Vs: epitaxial growth of GaAs on Si with or without buffer layers or non-epitaxial techniques such as mechanical stacking. A novel approach has been recently presented consisting in direct epitaxial growth of thin Si or SiGe layers on GaAs by low temperature PECVD, where the high crystal quality reported opens a new way for making III-V/Si tandem solar cells. Yet, due to the low deposition rate, the epi-Si layers are still rather thin (~10μm), and though they are assumed to be of high quality, some defects might be still present at the interface or in the bulk. These critical aspects still have to be carefully investigated to evaluate the potential benefits of this novel concept. Here, numerical simulation has definitely a role to play. Therefore, we propose to simulate these novel structures using TCAD tools and to estimate the defect density inside the thin epi-layer based on experimental inputs. Realistic efficiencies achievable by this novel concept will thus be presented and discussed.

Published
2015

13. WDM Compatible 2R and 3R Regeneration based on Saturable Absorber

Author

Le, Quang Trung, Bramerie, Laurent, Lobo, Sebastien, Gay, Mathilde, Roncin, Vincent, Joindot, Michel, Simon, Jean-Claude, Poudoulec, Alain, Van Der Keur, Michiel, Devemy, Christophe, Massoubre, David, Aubin, Guy, Oudar, Jean-Louis, Shen, Alexandre, Decobert, Jean, Duan, Guang-Hua, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), YENISTA Optics, YENISTA, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Asterix, Rotor, Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne, and THALES-ALCATEL

Subjects
synchronous modulation, all-optical regeneration, saturable absorber, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Abstract

poster [B-38]; International audience; A saturable absorber (SA) based on a vertical micro-cavity is of great interest for optical regeneration. In this paper, we report on the high potential of the SA for optical regeneration, both 2R and 3R regenerations are performed. A pigtailed chip SA with 8 independent fibres is assessed for the first time. We demonstrate experimentally the cascadability and WDM compatibility of this 2R module in a recirculation loop at 42.6 Gbit/s. In an all Erbium amplification system, the transmission distance is enhanced by a factor superior than 3 when the 2R regeneration is applied. This performance is obtained for 8 channels and over 13 nm for each channel. For the 3R regeneration set-up, a novel technique of all-optical synchronous modulation using cross saturation absorption in SA is also presented. The all-optical synchronous modulation is driven optically by the recovered clock from a self-pulsating laser device. Thank to this technique, a transmission distance enhancement factor of 22.5 at 42.6 Gbit/s is experimentally obtained.

Published
2008

14. Etude de la compatibilité WDM d'un régénérateur tout-optique 2R basé sur un module absorbant saturable à 8 canaux

Author

Le, Quang Trung, Bramerie, Laurent, Lobo, Sebastien, Gay, Mathilde, Joindot, Michel, Simon, Jean-Claude, Poudoulec, Alain, van Der Keur, Michiel, Devemy, Christophe, Massoubre, David, Oudar, Jean-Louis, Aubin, Guy, Shen, Alexandre, Decobert, Jean, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne, YENISTA Optics, YENISTA, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, SFO, Asterix, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), and THALES [France]-ALCATEL

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Abstract

session Affiches [P54]; National audience; Dans cet article, nous présentons pour la première fois un module absorbant saturable pigtailisé avec 8 fibres indépendantes. Nous montrons expérimentalement ses qualités pour une régénération 2R à 42.6 Gbit/s et son accordabilité en longueur d'onde.

Published
2007

15. Cascadability and wavelength tunability assessment of a 2R regeneration device based on a 8 channel saturable absorber module

Author

Bramerie , Laurent, Le , Quang Trung, Lobo , Sebastien, Gay , Mathilde, Joindot , Michel, Simon , Jean-Claude, Poudoulec , Alain, Van Der Keur , Michiel, Devemy , Christophe, Massoubre , David, Oudar , Jean-Louis, Aubin , Guy, DION , Jean, Shen , Alexandre, Decobert , Jean, Fonctions Optiques pour les Technologies de l'informatiON ( FOTON ), Télécom Bretagne-École Nationale Supérieure des Sciences Appliquées et de Technologie ( ENSSAT ) -Université de Rennes 1 ( UR1 ), Université de Rennes ( UNIV-RENNES ) -Université de Rennes ( UNIV-RENNES ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), Orange Labs [Lannion], France Télécom, YENISTA Optics, YENISTA, Laboratoire de photonique et de nanostructures ( LPN ), Centre National de la Recherche Scientifique ( CNRS ), Lab-STICC_TB_CACS_IAS, Alcatel-Thalès III-V lab ( III-V Lab ), THALES-ALCATEL-THALES-ALCATEL, THALES-ALCATEL, OSA, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), and THALES [France]-ALCATEL

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [ PHYS.PHYS.PHYS-OPTICS ] Physics [physics]/Physics [physics]/Optics [physics.optics]
Abstract

session " Postdeadline Session A " [PDP1]; International audience; We report the first pigtailed chip saturable absorber which has been implemented with 8 independent fibers using a cost effective coupling technique. The cascadability and wavelength tunability assessment have been experimentally demonstrated at 42.6 Gbit/s.

Published
2007

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