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1. Fabrication and characterization of ZnO:Sb/n-ZnO homojunctions

Author

N. Haneche, Corinne Sartel, Meherzi Oueslati, A. Marzouki, Alain Lusson, Vincent Sallet, Gilles Patriarche, Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

Subjects
Photoluminescence, Materials science, Thin films, Analytical chemistry, 02 engineering and technology, Substrate (electronics), Epitaxy, 01 natural sciences, MOVPE, symbols.namesake, 0103 physical sciences, General Materials Science, Metalorganic vapour phase epitaxy, Homojunction, Antimony doping, Diode, 010302 applied physics, Triethylantimony, Doping, General Chemistry, 021001 nanoscience & nanotechnology, Acceptor, symbols, ZnO, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology, Raman spectroscopy, SIMS
Abstract

International audience; Antimony-doped ZnO layers have been grown by metalorganic vapour-phase epitaxy on sapphire and ZnO substrates at high-temperature (950 °C) and low-pressure conditions (50 torr). Nitrous oxide and diethyl-zinc have been used as oxygen and zinc precursors, respectively. The incorporation of antimony has been obtained from the decomposition of triethylantimony doping molecules added in the gas phase. High Sb concentrations were measured from 1019 to 1021 at/cm−3 using secondary ion mass spectroscopy and depend on the nature and the orientation on the substrate. Low-temperature photoluminescence spectra of Sb-doped layers exhibit donor–acceptor pair transitions at 3.253 eV. Unlike Raman spectra of nitrogen-doped ZnO layers which show several local vibrational modes related to nitrogen incorporation, these modes were found to be absent in the antimony-doped ZnO layers. Transmission electron microscopy suggests that the incorporation of Sb is partly related to dislocations and other structural defects. All together, the characterizations suggest the formation of acceptor dopant–defect complexes, such as SbZn-2VZn. Finally, ZnO:Sb/n-ZnO homojunction diodes have been successfully elaborated on ZnO substrate. The current–voltage characteristics of the device exhibit a rectifying behaviour with a turn-on voltage of 3 V.

Published
2021
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2. Evidence of O‐Polar (000-1) ZnO Surfaces Induced by In Situ Ga Doping

Author

Bruno Masenelli, Karine Masenelli-Varlot, Christèle Vilar, Corinne Sartel, Alain Lusson, Christophe Arnold, P. Galtier, Said Hassani, Julien Barjon, Gaëlle Amiri, Vincent Sallet, Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Unité de recherche Pharmacologie-Toxicologie (UPT), Institut National de la Recherche Agronomique (INRA), Matériaux, ingénierie et science [Villeurbanne] (MATEIS), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Consortium Lyon Saint-Etienne de Microscopie (CLYM), École normale supérieure - Lyon (ENS Lyon)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Jean Monnet [Saint-Étienne] (UJM), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université Claude Bernard Lyon 1 (UCBL), École normale supérieure de Lyon (ENS de Lyon)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Jean Monnet - Saint-Étienne (UJM), INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), and Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon)

Subjects
010302 applied physics, In situ, Materials science, Polarity (physics), Doping, Zno nanowires, 02 engineering and technology, doping, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Photochemistry, 01 natural sciences, Transmission electron microscopy, 0103 physical sciences, transmission electron microscopy, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Polar, ZnO nanowires, General Materials Science, polarity, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, crystal facets, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2020
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3. p-Type Ultrawide-Band-Gap Spinel ZnGa2O4 : New Perspectives for Energy Electronics

Author

Hagar Mohamed, Christèle Vilar, Corinne Sartel, Francisco J. Belarre, Belén Ballesteros, E. Chikoidze, Michael R. Jennings, Vincent Sallet, Pablo Vales-Castro, Lijie Li, Guillaume Sauthier, Ismail Madaci, Yves Dumont, Elena del Corro, Amador Pérez-Tomás, Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), ICN2 - Institut Catala de Nanociencia i Nanotecnologia (ICN2), Universitat Autònoma de Barcelona (UAB), Centro Nacional de Microelectronica [Spain] (CNM), Ministry of Higher Education & Scientific Research (Egypt), Agencia Estatal de Investigación (España), Ministerio de Ciencia, Innovación y Universidades (España), European Commission, and Generalitat de Catalunya

Subjects
Materials science, Advanced applications, Band gap, engineering.material, 010402 general chemistry, 7. Clean energy, 01 natural sciences, ZnGa2O4, Spinel Oxides, Temperature range, General Materials Science, Electronics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS, Multi-functional materials, Ternary oxides, 010405 organic chemistry, Spinel, General Chemistry, Condensed Matter Physics, High temperature, Spinel compounds, Engineering physics, Zinc gallate, 0104 chemical sciences, Ultra-wide Bandgap Semiconductor, p-type Conductivity, engineering, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], P-type doping, Energy (signal processing)
Abstract

The family of spinel compounds is a large and important class of multifunctional materials of general formulation AB2X4 with many advanced applications in energy and optoelectronic areas such as fuel cells, batteries, catalysis, photonics, spintronics, and thermoelectricity. In this work, it is demonstrated that the ternary ultrawide-band-gap (∼5 eV) spinel zinc gallate (ZnGa2O4) arguably is the native p-type ternary oxide semiconductor with the largest Eg value (in comparison with the recently discovered binary p-type monoclinic β-Ga2O3 oxide). For nominally undoped ZnGa2O4 the high-temperature Hall effect hole concentration was determined to be as large as p = 2 × 1015 cm–3, while hole mobilities were found to be μh = 7–10 cm2/(V s) (in the 680–850 K temperature range). An acceptor-like small Fermi level was further corroborated by X-ray spectroscopy and by density functional theory calculations. Our findings, as an important step toward p-type doping, opens up further perspectives for ultrawide-band-gap bipolar spinel electronics and further promotes ultrawide-band-gap ternary oxides such as ZnGa2O4 to the forefront of the quest of the next generation of semiconductor materials for more efficient energy optoelectronics and power electronics., H.M. acknowledges the Cultural Affairs and Massion Sector, Egyptian Ministry for Higher Education, for her fellowship giving the possibility of work in France. E.d.C. acknowledges the Spanish MINECO Juan de la Cierva Fellowship JC-2015-25201. A.P.-T. acknowledges Agencia Estatal de Investigación (AEI) and Fondo Europeo de Desarrollo Regional (FEDER) under contract ENE2015-74275-JIN. The ICN2 is funded by the CERCA programme/Generalitat de Catalunya and by the Severo Ochoa programme of the Spanish Ministry of Economy, Industry and Competitiveness (MINECO, grant no. SEV-2017-0706).

Published
2020
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4. Resolving ZnO-based coaxial core-multishell heterostructure by electrical scanning probe microscopy

Author

Georges Bremond, Said Hassani, Lin Wang, Vincent Sallet, Corinne Sartel, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Groupe d'Etude de la Matière Condensée (GEMAC), and Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Spreading resistance profiling, business.industry, Nanowire, Heterojunction, 02 engineering and technology, Chemical vapor deposition, Scanning capacitance microscopy, 021001 nanoscience & nanotechnology, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Scanning probe microscopy, [SPI]Engineering Sciences [physics], Electrical resistivity and conductivity, 0103 physical sciences, Microscopy, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

Coaxially periodic ZnO/ZnMgO core-multishell nanowire (NW) heterostructures were grown via a metal organic chemical vapor deposition method. We investigated their electrical properties via the application of two locally resolved electrical scanning probe microscopy techniques, i.e., scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM), following a planarization process. As a result, ZnO and ZnMgO layers can be unambiguously distinguished by both techniques on NWs with diameters

Published
2018
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5. Crystal facet engineering in Ga-doped ZnO nanowires for Mid-IR plasmonics

Author

Vincent Sallet, Corinne Sartel, Said Hassani, Amiri, G., Alain Lusson, Galtier P, Isabelle Lefebvre, Christophe Delerue, Bruno Masenelli, Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique-IEMN (PHYSIQUE-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN (MAMINA - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Physique - IEMN (PHYSIQUE - IEMN), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2018

6. ZnO nanowire facet transformation induced by Ga doping

Author

Vincent Sallet, Corinne Sartel, Said Hassani, Amiri, G., Alain Lusson, Galtier P, Isabelle Lefebvre, Christophe Delerue, Bruno Masenelli, Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Physique-IEMN (PHYSIQUE-IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Physique - IEMN (PHYSIQUE - IEMN), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2018

7. In situ biasing and off-axis electron holography of a ZnO nanowire

Author

Eva Monroy, Corinne Sartel, Vincent Sallet, Julien Pernot, Robert A. McLeod, Fabrice Donatini, Martien Den Hertog, Matériaux, Rayonnements, Structure (NEEL - MRS), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Optique & Microscopies (NEEL - POM), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Semi-conducteurs à large bande interdite (NEEL - SC2G), Institut Universitaire de France (IUF), Ministère de l'Education nationale, de l’Enseignement supérieur et de la Recherche (M.E.N.E.S.R.), ANR-12-JS10-0002,COSMOS,Correlation du microscopie électronique en transmission avec des mesures optique et électrique effectués sur le même nanofils unique(2012), ANR-11-NANO-0013,MAD-FIZ,Maîtrise du dopage dans les nanofils semiconducteurs : cas de l'oxyde de zinc(2011), Matériaux, Rayonnements, Structure (MRS), Optique et microscopies (POM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and Semi-conducteurs à large bande interdite (SC2G )

Subjects
Materials science, Scanning electron microscope, Mechanical Engineering, Schottky barrier, Nanowire, Bioengineering, Biasing, Cathodoluminescence, 02 engineering and technology, General Chemistry, 021001 nanoscience & nanotechnology, Electrostatics, 01 natural sciences, Molecular physics, Electron holography, Mechanics of Materials, Field desorption, 0103 physical sciences, General Materials Science, Electrical and Electronic Engineering, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology
Abstract

International audience; Quantitative characterization of electrically active dopants and surface charges in nano-objects is challenging, since most characterization techniques using electrons [1–3], ions [4] or field ionization effects [5–7] study the chemical presence of dopants, which are not necessarily electrically active. We perform cathodoluminescence and voltage contrast experiments on a contacted and biased ZnO nanowire with a Schottky contact and measure the depletion length as a function of reverse bias. We compare these results with state-of-the-art off-axis electron holography in combination with electrical in situ biasing on the same nanowire. The extension of the depletion length under bias observed in scanning electron microscopy based techniques is unusual as it follows a linear rather than square root dependence, and is therefore difficult to model by bulk equations or finite element simulations. In contrast, the analysis of the axial depletion length observed by holography may be compared with three-dimensional simulations, which allows estimating an n-doping level of 1 × $10^{18}$ $cm^{−3}$ and negative sidewall surface charge of 2.5 × $10^{12}$ $cm^{−2}$ of the nanowire, resulting in a radial surface depletion to a depth of 36 nm. We found excellent agreement between the simulated diameter of the undepleted core and the active thickness observed in the experimental data. By combining TEM holography experiments and finite element simulation of the NW electrostatics, the bulk-like character of the nanowire core is revealed.

Published
2018
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8. Surface effects on exciton diffusion in non polar ZnO/ZnMgO heterostructures

Author

G. Sakr, Corinne Sartel, P. Galtier, Vincent Sallet, Julien Barjon, Gilles Patriarche, Alain Lusson, Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), and Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Surface (mathematics), Materials science, excitons, Exciton, diffusion, Cathodoluminescence, Heterojunction, cathodoluminescence, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Focused ion beam, Molecular physics, heterostructures, Transmission electron microscopy, 0103 physical sciences, General Materials Science, Diffusion (business), [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, Quantum well
Abstract

International audience; The diffusion of excitons injected in ZnO/Zn 0.92 Mg 0.08 O quantum well heterostructures grown by metal-organic-vapor-phase-epitaxy on non-polar ZnO substrates is investigated at room temperature. Cathodoluminescence linescans in a field-emission-gun scanning-electronmicroscope are performed across cleaved cross-sections. A 55 nm diffusion length is assessed for excitons in bulk ZnMgO. When prepared as small angle bevels using focused ion beam (FIB), the effective diffusion length of excitons is shown to decrease down to 8 nm in the thinner part of the slab. This effect is attributed to non-radiative surface recombinations, with a 7 × 10 4 cm s−1 recombination velocity estimated at the FIB-machined ZnMgO surface. The strong reduction of the diffusion extent in such thin lamellae usually used for transmission electron microscopy could be use improve the spatial resolution of cathodoluminescence images, often limited by diffusion processes.

Published
2017
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9. Electron beam dose dependence of surface recombination velocity and surface space charge in semiconductor nanowires

Author

Julien Pernot, Corinne Sartel, Vincent Sallet, Fabrice Donatini, Optique et microscopies (POM), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), and Semi-conducteurs à large bande interdite (SC2G )

Subjects
Materials science, Scanning electron microscope, Exciton, Nanowire, Bioengineering, Cathodoluminescence, 02 engineering and technology, 01 natural sciences, Electrical resistance and conductance, 0103 physical sciences, General Materials Science, Electrical and Electronic Engineering, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Mechanical Engineering, General Chemistry, 021001 nanoscience & nanotechnology, Space charge, Semiconductor, Mechanics of Materials, Atomic physics, 0210 nano-technology, business, Beam (structure)
Abstract

The characterization of nanowires (NWs) often requires the use of scanning electron beam techniques because of their high spatial resolution. However, the impact of the high energetic electron beam on the physical parameters under investigation is rarely taken into account. In this work, a combination of optical and electrical techniques is involved for the measurement of the electron beam dose (EBD) dependence of cathodoluminescence intensity, exciton diffusion length and electrical resistance in ZnO NWs. Large EBD dependences of these key parameters are observed and their reversibility is investigated. The results are discussed in terms of bulk and surface reversible modifications. In particular, the behaviors of surface recombination velocity and surface space charge under electron beam exposure are determined and simulated. This study points out that caution must be taken and experimental protocols must be well defined when measuring physical parameters of NWs using electron beam techniques.

Published
2017
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10. Comparison of Three E-Beam Techniques for Electric Field Imaging and Carrier Diffusion Length Measurement on the Same Nanowires

Author

Vincent Sallet, Gauthier Chicot, Corinne Sartel, Fabrice Donatini, Andres de Luna Bugallo, Julien Pernot, Pierre Tchoulfian, Optique et microscopies (POM), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Semi-conducteurs à large bande interdite (SC2G ), Groupe d'Etude de la Matière Condensée (GEMAC), and Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], Materials science, Mechanical Engineering, Electron beam-induced current, Exciton, Schottky barrier, Analytical chemistry, Nanowire, Schottky diode, Bioengineering, 02 engineering and technology, General Chemistry, Radius, 010402 general chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Molecular physics, 0104 chemical sciences, Depletion region, Electric field, General Materials Science, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract

Whereas nanowire (NW)-based devices offer numerous advantages compared to bulk ones, their performances are frequently limited by an incomplete understanding of their properties where surface effect should be carefully considered. Here, we demonstrate the ability to spatially map the electric field and determine the exciton diffusion length in NW by using an electron beam as the single excitation source. This approach is performed on numerous single ZnO NW Schottky diodes whose NW radius vary from 42.5 to 175 nm. The dominant impact of the surface on the NW properties is revealed through the comparison of three different physical quantities recorded on the same NW: electron-beam induced current, cathodoluminescence, and secondary electron signal. Indeed, the space charge region near the Schottky contact exhibits an unusual linear variation with reverse bias whatever the NW radius. On the contrary, the exciton diffusion length is shown to be controlled by the NW radius through surface recombination. This systematic comparison performed on a single ZnO NW demonstrates the power of these complementary techniques in understanding NW properties.

Published
2016
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11. Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy

Author

Lin Wang, Corinne Sartel, François Jomard, Vincent Sallet, Georges Bremond, Jean-Michel Chauveau, R. Brenier, Center for Condensed Matter Sciences Taipei, National Taiwan University [Taiwan] (NTU), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Institut Lumière Matière [Villeurbanne] (ILM), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Spreading resistance profiling, business.industry, Doping, Nanowire, Wide-bandgap semiconductor, Nanotechnology, 02 engineering and technology, Chemical vapor deposition, 021001 nanoscience & nanotechnology, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI]Engineering Sciences [physics], 0103 physical sciences, Microscopy, Optoelectronics, Metalorganic vapour phase epitaxy, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Molecular beam epitaxy
Abstract

Scanning spreading resistance microscopy (SSRM) was performed on non-intentionally doped (nid) ZnO nanowires (NWs) grown by metal-organic chemical vapor deposition in order to measure their residual carrier concentration. For this purpose, an SSRM calibration profile has been developed on homoepitaxial ZnO:Ga multilayer staircase structures grown by molecular beam epitaxy. The Ga density measured by SIMS varies in the 1.7 × 1017 cm−3 to 3 × 1020 cm−3 range. From measurements on such Ga doped multi-layers, a monotonic decrease in SSRM resistance with increasing Ga density was established, indicating SSRM being a well-adapted technique for two dimensional dopant/carrier profiling on ZnO at nanoscale. Finally, relevant SSRM signal contrasts were detected on nid ZnO NWs, and the residual carrier concentration is estimated in the 1–3 × 1018 cm−3 range, in agreement with the result from four-probe measurements.

Published
2016
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12. Metallic core conduction in unintentionally doped ZnO nanowire

Author

Fabrice Donatini, Andres de Luna Bugallo, Julien Pernot, Corinne Sartel, Vincent Sallet, Semi-conducteurs à large bande interdite (SC2G), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF), Optique et microscopies (POM), Groupe d'Etude de la Matière Condensée (GEMAC), and Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], Materials science, business.industry, Doping, General Engineering, Nanowire, General Physics and Astronomy, Nanotechnology, Chemical vapor deposition, Thermal conduction, Degenerate semiconductor, Core (optical fiber), Metal, Impurity, visual_art, visual_art.visual_art_medium, Optoelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract

The conduction through unintentionally doped ZnO nanowires grown by metalorganic chemical vapor deposition versus temperature (4 to 300 K) and nanowire radius (50 to 175 nm) was investigated. To obtain a reliable picture of the electrical conduction, controlled experimental conditions were used to master the influence of the surrounding environment. Conduction in the nanowires was found to be metallic through the core of the degenerate semiconductor. The origin of the high residual doping level [(1–5) × 1018 cm−3] is discussed in terms of incorporation of impurities during the growth process.

Published
2015
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13. Characterizations of Ohmic and Schottky-behaving contacts of a single ZnO nanowire

Author

Sergei Kostcheev, Gilles Lerondel, Christophe Couteau, Vincent Sallet, Bogdan Bercu, Corinne Sartel, Louis Giraudet, Wei Geng, Michael Molinari, O. Simonetti, Laboratoire de Recherche en Nanosciences - EA 4682 (LRN), Université de Reims Champagne-Ardenne (URCA)-SFR CAP Santé (Champagne-Ardenne Picardie Santé), Université de Reims Champagne-Ardenne (URCA)-Université de Picardie Jules Verne (UPJV)-Université de Reims Champagne-Ardenne (URCA)-Université de Picardie Jules Verne (UPJV)-SFR Condorcet, Université de Reims Champagne-Ardenne (URCA)-Université de Picardie Jules Verne (UPJV)-Centre National de la Recherche Scientifique (CNRS)-Université de Reims Champagne-Ardenne (URCA)-Université de Picardie Jules Verne (UPJV)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Nanotechnologie et d'Instrumentation Optique (LNIO), Institut Charles Delaunay (ICD), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), CNRS International NTU THALES Research Alliance (UMI CINTRA), THALES-Nanyang Technological University [Singapour]-Centre National de la Recherche Scientifique (CNRS), Université de Reims Champagne-Ardenne (URCA)-Université de Reims Champagne-Ardenne (URCA)-SFR Condorcet, Université de Reims Champagne-Ardenne (URCA)-Centre National de la Recherche Scientifique (CNRS)-Université de Reims Champagne-Ardenne (URCA)-Centre National de la Recherche Scientifique (CNRS), CNRS International - NTU - Thales Research Alliance (CINTRA), and THALES [France]-Nanyang Technological University [Singapour]-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Surface Properties, Contact geometry, Nanowire, Bioengineering, Nanotechnology, 02 engineering and technology, Chemical vapor deposition, Microscopy, Atomic Force, 01 natural sciences, Depletion region, Electricity, 0103 physical sciences, General Materials Science, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Ohmic contact, 010302 applied physics, Kelvin probe force microscope, business.industry, Nanowires, Mechanical Engineering, Schottky diode, General Chemistry, 021001 nanoscience & nanotechnology, Mechanics of Materials, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Zinc Oxide, 0210 nano-technology, business
Abstract

International audience; Current–voltage and Kelvin probe force microscopy (KPFM) measurements were performedon single ZnO nanowires. Measurements are shown to be strongly correlated with the contactbehavior, either Ohmic or diode-like. The ZnO nanowires were obtained by metallo-organicchemical vapor deposition (MOCVD) and contacted using electronic-beam lithography.Depending on the contact geometry, good quality Ohmic contacts (linear I–V behavior) ornon-linear (diode-like) contacts were obtained. Current–voltage and KPFM measurements onboth types of contacted ZnO nanowires were performed in order to investigate their behavior.A clear correlation could be established between the I–V curve, the electrical potential profilealong the device and the nanowire geometry. Some arguments supporting this behavior aregiven based on technological issues and on depletion region extension. This work will help tobetter understand the electrical behavior of Ohmic contacts on single ZnO nanowires, forfuture applications in nanoscale field-effect transistors and nano-photodetectors.

Published
2013
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14. Ohmic contact on single ZnO nanowires grown by MOCVD

Author

Gilles Lerondel, Wei Geng, Vincent Sallet, Louis Giraudet, O. Simonetti, Christophe Couteau, Sergei Kostcheev, Michael Molinari, Corinne Sartel, Laboratoire de Nanotechnologie et d'Instrumentation Optique (LNIO), Institut Charles Delaunay (ICD), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Recherche en Nanosciences - EA 4682 (LRN), Université de Reims Champagne-Ardenne (URCA)-SFR CAP Santé (Champagne-Ardenne Picardie Santé), Université de Reims Champagne-Ardenne (URCA)-Université de Picardie Jules Verne (UPJV)-Université de Reims Champagne-Ardenne (URCA)-Université de Picardie Jules Verne (UPJV)-SFR Condorcet, Université de Reims Champagne-Ardenne (URCA)-Université de Picardie Jules Verne (UPJV)-Centre National de la Recherche Scientifique (CNRS)-Université de Reims Champagne-Ardenne (URCA)-Université de Picardie Jules Verne (UPJV)-Centre National de la Recherche Scientifique (CNRS), Université de Reims Champagne-Ardenne (URCA)-Université de Reims Champagne-Ardenne (URCA)-SFR Condorcet, and Université de Reims Champagne-Ardenne (URCA)-Centre National de la Recherche Scientifique (CNRS)-Université de Reims Champagne-Ardenne (URCA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Fabrication, Materials science, Nanowire, chemistry.chemical_element, Nanotechnology, ohmic contact, 02 engineering and technology, Zinc, Chemical vapor deposition, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Nanolithography, chemistry, nanowires, 0103 physical sciences, ZnO, nanofabrication, Metalorganic vapour phase epitaxy, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Ohmic contact, Lithography
Abstract

International audience; We present work on the fabrication and the characterization of ohmic contacts on single zinc oxide nanowires grown by metalorganic chemical vapour deposition. We demonstrate pre‐positionning of single nanowires before electronic‐beam lithography for 2 point metallic contacts. We characterize single nanowires by microphotoluminescence and by current‐voltage measurements. I–V results present a linear curve down to 1 mV with resistivities from 0.23 to 2.4 Ω ċ cm are measured, consistent with previous observation on ZnO nanowires.

Published
2013
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15. Growth studies and optical properties of Zn1−xCdxO films grown by metal-organic chemical-vapor deposition

Author

Gilles Lerondel, Gaëlle Amiri, François Jomard, Vincent Sallet, Corinne Sartel, Alain Lusson, Pierre Galtier, J. M. Laroche, Nadia Haneche, Christèle Vilar, Christophe Couteau, Jenny Lin, Roy Aad, Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Département Poudres et Matériaux Multi-Composants (P2MC-ENSMSE), École des Mines de Saint-Étienne (Mines Saint-Étienne MSE), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-SPIN, Laboratoire de Nanotechnologie et d'Instrumentation Optique (LNIO), Institut Charles Delaunay (ICD), and Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Photoluminescence, Materials science, Scanning electron microscope, Analytical chemistry, 02 engineering and technology, Surfaces and Interfaces, Chemical vapor deposition, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Surfaces, Coatings and Films, Secondary ion mass spectrometry, Ellipsometry, 0103 physical sciences, Sapphire, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Deposition (phase transition), Metalorganic vapour phase epitaxy, 0210 nano-technology
Abstract

International audience; Heteroepitaxial growths of Zn1−xCdxO films were performed on R-oriented sapphire substrates by metal-organic chemical-vapor deposition. The authors carried out secondary ion mass spectrometry analysis, scanning electron microscopy, photoluminescence, and ellipsometric measurements to investigate the incorporation of cadmium in the layers, as well as its influence on the optical properties. Compositions up to 5.5% Cd were obtained, tuning the photoluminescence emission from 3.36 (ZnO) to 3.1 eV and increasing the refractive index at 600 nm from 1.94 to 2.

Published
2011
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