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Si 1− x Mn x diluted magnetic semiconductor films were deposited on the p-Si (100) single crystal wafer using magnetron sputtering method. Post-rapid thermal annealing treatments were performed at temperatures of 700 °C, 800 °C, and 900 °C in an argon atmosphere for approximately 5 min. Alternating gradient magnetometer, scanning electron microscope, atomic force microscope, X-ray diffraction and X-ray absorption near-edge structure spectra were employed to characterize magnetic properties and structure of the as-grown and annealed films. The films were about 2.8 μm thick and the RMS roughness of the surface was about 5–10 nm. All samples exhibit ferromagnetism at room temperature and the saturation magnetization reaches at the maximum value for the sample annealed at 700 °C. The silicide MnSi 1.7 was observed in the annealed samples. X-ray absorption near-edge structure spectra indicated that Mn atoms preferred to occupy substitutional or interstitial sites instead of precipitating to form silicide when annealing at 700 °C. It is inferred that the observed ferromagnetism is attributed to the interstitial and substitutional Mn dimers, which existed mostly in the sample annealed at 700 °C. The weaker ferromagnetism of the 900 °C annealed sample was closely related to the increased content of Mn 4 Si 7 compound.

Polycrystalline Si 1 − x Cr x thin films have been prepared by magnetron sputtering followed by rapid thermal annealing (RTA) for crystallization. RTA was performed at 800 °C for 5 min, 1200 °C for 30 s and 1200 °C for 2 min, in a N 2 flow. The magnetic hysteresis loops were observed at room temperature in all the samples except for RTA at 800 °C for 5 min, and the annealing caused the decrease of saturation magnetization relative to the as-grown film. X-ray diffraction spectra and Raman spectra showed that the annealing process lead the deposited amorphous film to be crystallized and CrSi 2 phase formed. The magnetism of the films was determined by the competition between crystallinity and precipitation of diamagnetic CrSi 2 phase.

TiO2 sols were synthesized via hydrothermal reaction using a less hydrolysable alkoxide or tetrabutyl titanate as the starting material. Using characterizations of X-ray diffraction, dynamic laser scattering and transmission electron microscopy, particle coarsening dynamics along with the particle dispersion behavior in the sols were studied via changing hydrothermal temperature from 160 °C to 250 °C. It was observed that, pure anatase phase was obtained in the whole examined temperature range. With temperature increasing, the particle size distribution in the sols first narrowed, and then broadened. Mono-dispersed nanocrystallites were obtained at the temperature of 220 °C. Aggregations were formed between the nanocrystallites at other temperatures. The causes of the aggregating behavior were analyzed and found to be different when the temperature was less than or beyond 220 °C. The as-synthesized TiO2 sols were used in fabrication of dye sensitized nanocrystallite solar cell. The cells assembled from temperature of 220 °C came out with the best photo-to-electric energy conversion efficiency, which is ascribed to the improved dispersion of particles in TiO2 sols.

Zn 0.95− x Co 0.05 Cu x O (ZCCO, where x = 0, 0.005, 0.01 and 0.015) thin films were deposited on Si (1 0 0) substrates by pulsed laser deposition technique. Crystal structures, surface morphologies, chemical compositions, bonding states and chemical valences of the corresponding elements for ZCCO films were characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and X-ray photoelectron spectroscopy (XPS). XRD and FESEM results indicate that crystallite sizes of the highly (0 0 2)-oriented ZCCO films slightly decrease with increasing Cu content. When the Cu content increases from 0 to 0.015, Zn 2 p 3/2 , Co 2 p , Cu 2 p 3/2 and O 1 s peaks of the ZCCO film shift towards higher or lower binding energy regions, and the reasons for these chemical shifts are investigated by fitting the corresponding XPS narrow-scan spectra. Both in-plane and out-of-plane magnetization-magnetic field hysteresis loops of the ZCCO films reveal that all the films have room temperature ferromagnetisms (RTFMs). The conceivable origin of the RTFM is ascribed to the combined effects of the local structural disorder resulted from (Co 2+ , Cu 2+ , Cu 1+ )-cations which substitute Zn 2+ ions in the ZnO matrices, ferromagnetic coupling between coupled dopant atoms caused by Co 2+ (3 d 7 4 s 0 ) and Cu 2+ (3 d 9 4 s 0 ) spin states, and exchange interactions between the unpaired electron spins originating from lattice defects induced by Cu doping in the Zn 0.95 Co 0.05 O matrices.

Ba0.9Sr0.1TiO3 (BST) thin films were deposited on fused quartz and Pt/TiN/Si3N4/Si substrates by radio frequency magnetron sputtering technique. Microstructure and chemical bonding states of the BST films annealed at 700 °C were characterized by field emission scanning electron microscopy, X-ray photoelectron spectroscopy, glancing angle X-ray diffraction and Raman spectrum. Optical constants including refractive indices, extinction coefficients and bandgap energies of the as-deposited BST film and the BST films annealed at 650, 700 and 750 °C, respectively, were determined from transmittance spectra by envelope method and Tauc relation. Dielectric constant and remnant polarization for the BST films increase with increasing annealing temperature. Leakage current density-applied voltage (J–V) data indicate that the dominant conduction mechanism for all the BST capacitors is the interface-controlled Schottky emission under the conditions of 14 V

Radio frequency magnetron sputtered Ba"0"."6"5Sr"0"."3"5TiO"3 (BST) thin films were etched in CF"4/Ar/O"2 plasma by magnetically enhanced reactive ion etching technique. The etching characteristics of BST films were characterized in terms of microstructure and electrical properties. Atomic force microscopy and X-ray diffraction results indicate that the microstructure of the etched BST film is degraded because of the rugged surface and lowered intensities of BST (100), (110), (111) and (200) peaks compared to the unetched counterparts. Dielectric constant and dielectric dissipation of the unetched, etched and postannealed-after-etched BST film capacitors are 419, 346, 371, 0.018, 0.039 and 0.031 at 100kHz, respectively. The corresponding dielectric tunability, figure of merit and remnant polarization are 19.57%, 11.56%, 17.25%, 10.87, 2.96, 5.56, [email protected]/cm^2, 2.32 and [email protected]/cm^2 at 25V, respectively. The leakage current density of 1.75x10^-^4 A/cm^2 at 15V for the etched BST capacitor is over two orders of magnitude higher than 1.28x10^-^6 A/cm^2 for the unetched capacitor, while leakage current density of the postannealed-after-etched capacitor decreases slightly. It means that the electrical properties of the etched BST film are deteriorated due to the CF"4/Ar/O"2 plasma-induced damage. Furthermore, the damage is alleviated, and the degraded microstructure and electrical properties are partially recovered after the etched BST film is postannealed at 923K for 20min under a flowing O"2 ambience.

Ba0.65Sr0.35TiO3 (BST) thin films were deposited on Pt/Ti/SiO2/Si substrates by radio frequency magnetron sputtering technique. X-ray photoelectron spectroscopy (XPS) depth profiling data show that each element component of the BST film possesses a uniform distribution from the outermost surface to subsurface, but obvious Ti-rich is present to BST/Pt interface because Ti4+ cations are partially reduced to form amorphous oxides such as TiOx (x