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The growth mode and electronic properties of ultrathin films of silver deposited at room temperature (RT) on a 9 monolayers (ML) pseudomorphic Mn film on a Ag(001) surface have been studied by means of low energy electron diffraction (LEED), X-ray photoelectron diffraction (XPD) and angle-resolved ultraviolet photoemission (ARUPS). In particular ARUPS was used to investigate the valence band structure. Initially the data show some Ag segregation on top of the Mn film grown at RT. In the 0.5–0.9 ML coverage range the Ag adlayer exhibits d-band spectral behavior characteristic of two-dimensional dispersion. Further evaporation of Ag results in the formation of Ag bilayer platelets, and > 3 ML deposition the system exhibits a three-dimensional electronic structure converging towards a bulk Ag(001)-like system. Thus the growth mode of Ag on the Mn film is found to be nearly layer by layer up to 2 ML.

The growth mode of Mn on Ag(100) in the monolayer range was studied using X-ray photoelectron diffraction (XPD), angle-resolved valence band photoemission and low energy electron diffraction. Our results show that MnAg intermixing takes place. The thickness of the intermixed films depends critically on the growth temperature. At room temperature the XPD data clearly indicate that Mn is located in the first and second topmost atomic layers. The growth at higher temperatures, i.e. for 1 ML deposited at 460 K, or 1 ML deposited at RT and then annealed at 460 K, results in enhanced interdiffusion and Ag segregation.

Thin Cu layers have been evaporated at room temperature on Cr films (~ 10 monolayers) deposited on a Cu(001) single crystal. The Crystallographic structure of these sandwiches is analysed by means of low-energy electron diffraction (LEED), angle-resolved ultra-violet photoemission spectroscopy (ARUPS) and X-ray photoemission spectroscopy. The data show that the attenuation of the Cr signal versus Cu deposition is much lower than expected for a uniform film growth. Moreover, the LEED pattern characteristic of the Cr film (made of Cr(110) domains with four different orientations) is visible for Cu coverages as high as 23 ML. This indicates a strong diffusion of the Cu atoms on the Cr film surface and the formation of Cu three-dimensional islands which present, according to ARUPS and X-ray photoelectron diffraction measurements, a highly disordered fcc Crystallographic structure. However the low reactivity of the sandwiches towards oxygen suggests that the whole Cr surface is wetted by at least 1 ML of Cu.

Thin Cr films (∼20 A) deposited in vacuum at 300 K on a Cu(001) single crystal have been annealed at various temperatures and analyzed by angle resolved ultraviolet photoemission, X-ray photoemission, X-ray photoelectron diffraction and low energy electron diffraction. The data show that Cu segregation occurs above 425 K, resulting in an atomic monolayer wetting the whole Cr film. At 775 K, the Cr overlayer collapses and the Cu(001) substrate surface becomes partly uncovered.

We have investigated the crystallographic structure of ultra-thin Mn films deposited at room temperature on a clean Ag(100) single crystal, using angle-resolved ultra-violet photoemission, X-ray photoelectron diffraction (XPD) and low-energy electron diffraction. The evolution of the Ag 4d valence band shows deviations from simple layer by layer growth. These results, combined with the XPD data, indicate that by ∼1–1.5 monolayers of Mn a two layers thick Mn-rich epitaxial MnAg alloy is formed that continues the face centered cubic lattice of the Ag substrate.