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The performance of silicon-germanium (SiGe) transistors under cryogenic operation is analysed. The design and characterization of a 3–14 GHz low-noise amplifier (LNA) using SiGe transistors at 300 K and at 13 K are presented. A three stage amplifier is implemented with bipolar transistors model BFU910F from NXP commercially available with a plastic package. The amplifier exhibits 36.8 dB average gain with average noise temperature of 103 K and 42 mW DC power consumption at 300 K ambient temperature. Whereas cooled down to 13 K ambient temperature, it provides 32.4 dB average gain, 11.4 K average noise temperature with a minimum of 7.2 K at 3.5 GHz and a DC power dissipation of 5.8 mW. The presented LNA demonstrates an outstanding performance at cryogenic temperature for a commercial plastic packaged transistor. [ABSTRACT FROM AUTHOR]

Abstract A comprehensive design methodology for microstrip broadband attenuators is presented. Closed-form design equations are given for two types of distributed attenuators. The attenuators are based on a cascade connection of thin-film resistors and microstrip line sections. The structure provides maximally flat attenuation and wideband performance without the need of plated via holes to ground, facilitating manufacture as well as achieving proper performance at millimeter wave frequencies. Experimental results demonstrate the validity of the technique applied to 3 dB and 13 dB broadband attenuators on alumina substrate up to 67 GHz. The proposed topology can be applied not only to MIC, but also to MMIC designs at the highest frequencies. [ABSTRACT FROM AUTHOR]