Back to Search
Start Over
Cryogenic performance of a 3–14 GHz bipolar SiGe low-noise amplifier.
- Source :
-
Cryogenics . Apr2019, Vol. 99, p18-24. 7p. - Publication Year :
- 2019
-
Abstract
- The performance of silicon-germanium (SiGe) transistors under cryogenic operation is analysed. The design and characterization of a 3–14 GHz low-noise amplifier (LNA) using SiGe transistors at 300 K and at 13 K are presented. A three stage amplifier is implemented with bipolar transistors model BFU910F from NXP commercially available with a plastic package. The amplifier exhibits 36.8 dB average gain with average noise temperature of 103 K and 42 mW DC power consumption at 300 K ambient temperature. Whereas cooled down to 13 K ambient temperature, it provides 32.4 dB average gain, 11.4 K average noise temperature with a minimum of 7.2 K at 3.5 GHz and a DC power dissipation of 5.8 mW. The presented LNA demonstrates an outstanding performance at cryogenic temperature for a commercial plastic packaged transistor. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00112275
- Volume :
- 99
- Database :
- Academic Search Index
- Journal :
- Cryogenics
- Publication Type :
- Academic Journal
- Accession number :
- 136692714
- Full Text :
- https://doi.org/10.1016/j.cryogenics.2019.02.001