98 results on '"Zheng, Y.D."'
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2. Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells
3. Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets
4. Experimental investigation on the upconversion mechanism of 754 nm NIR luminescence of Ho3+/Yb3+:Y2O3, Gd2O3 under 976 nm diode laserexcitation
5. Ultraviolet emission efficiencies of Al xGa 1 − x N films pseudomorphically grown on Al yGa 1 − y N template (x < y) with various Al-content combinations
6. Enhancing upconversion emissions of NaTm 0.02Yb xY 0.98− xF 4 nanocrystals through increasing Yb 3+ doping
7. The influences of O/Zn ratio and growth temperature on carbon impurity incorporation in ZnO grown by metal-organic chemical vapor deposition
8. Ferromagnetic Fe 3N films grown on GaN(0 0 0 2) substrates by MOCVD
9. In vitro biological performance of nano-particles on the surface of hydroxyapatite coatings
10. Rapid thermal annealing induced changes on the contact of Ni/Au to N-doped ZnO
11. Effect of NH 3 flow rate on growth, structure and luminescence of amorphous silicon nitride films by electron cyclotron resonance plasma
12. Al incorporation, structural and optical properties of Al xGa 1−xN (0.13⩽ x⩽0.8) alloys grown by MOCVD
13. High temperature dehydrogenation for realization of nitrogen-doped p-type ZnO
14. Temperature dependence of strain in Al 0.22Ga 0.78N/GaN heterostructures with and without Si 3N 4 passivation
15. Modeling analysis of the MOCVD growth of ZnO film
16. The high mobility InN film grown by MOCVD with GaN buffer layer
17. High reflectivity AlGaN/AlN DBR mirrors grown by MOCVD
18. The template effects on AlN/Al 0.3Ga 0.7N distributed Bragg reflectors grown by MOCVD
19. Characterization of 4H-SiC grown on AlN/Si(100) by CVD
20. Study of structures and magnetic properties of single crystalline HVPE–GaMnN films
21. The solubility of phosphorus in GaN
22. Structural evolution of SiN x films deposited by ECR and its light emission
23. Nonvolatile memory based on Ge/Si hetero-nanocrystals
24. SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(1 1 1) substrates
25. Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer
26. Research on the Mn-implanted GaN with ferromagnetism at room temperature
27. Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-Al xGa 1− xN/GaN heterostructures
28. Study on the AlN/Si [formula omitted] interface properties
29. Subbands transport of the two-dimensional electron gas in Al xGa 1− xN/GaN heterostructures
30. Characterization of GaN 1− xP x alloys grown by metal-organic chemical vapor deposition
31. Effect of surface treatments on Schottky contact on n-Al xGa 1− xN/GaN heterostructures
32. Investigation of the crystal tilts in laterally epitaxial overgrowth GaN films formed by hydride vapor phase epitaxy
33. High hole mobility in p-strained Si grown on relaxed SiC virtual substrate by low-pressure chemical vapor deposition
34. Growth and photocurrent property of GaN/anodic alumina/Si
35. Study of wing tilt in asymmetrically and laterally overgrowth of thick GaN films
36. GaN 1− xP x ternary alloys with high P composition grown by metal-organic chemical vapor deposition
37. Study of moiré fringes at the interface of GaN/α-Al 2O 3 (0 0 0 1)
38. Growth of high quality GaN layers with AlN buffer on Si(1 1 1) substrates
39. Deposition and crystallization of amorphous GaN buffer layers on Si(1 1 1) substrates
40. Impact of anisotropic strains on low-frequency dielectric properties and room-temperature polar phases of SrTiO 3 epitaxial thin films
41. The LiNbO3 thin films deposited on the Al0.28Ga0.72N/ GaN substrate
42. The growth temperature dependence of In aggregation in two-step MOCVD grown InN films on sapphire
43. Enhancing upconversion emissions of NaTm0.02Yb x Y0.98−x F4 nanocrystals through increasing Yb3+ doping
44. Experimental investigation on the upconversion mechanism of 754nm NIR luminescence of Ho3+/Yb3+:Y2O3, Gd2O3 under 976nm diode laserexcitation
45. Investigation of dislocations and defects in epitaxial lateral overgrown GaN by photoelectrochemical wet etching
46. A novel InxGa1−xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density
47. Preparation of large area freestanding GaN by laser lift-off technology
48. Gas-phase parasitic reactions and Al incorporation efficiency in light radiation heating, low-pressure metal–organic chemical vapor deposition of AlGaN
49. Surface morphology study and electrical properties of Si 1−xC x on Si grown by low pressure chemical vapor deposition
50. Vibration energy relaxation of CH 4 via CRIIF (coherent Raman induced infrared fluorescence)
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