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A novel InxGa1−xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density
- Source :
-
Solid-State Electronics . Feb2005, Vol. 49 Issue 2, p199-203. 5p. - Publication Year :
- 2005
-
Abstract
- Abstract: By self-consistently solving Schrödinger and Poisson equations, an extremely high two-dimensional electron-gas (2DEG) sheet density of 1.01×1014cm−2 is calculated in a novel InN-based InxGa1−xN/InN heterostructure field-effect transistor with an In content of x=0.1 and a doping level of Nd=1×1019cm−3 in the InxGa1−xN barrier layer. It is increased by almost one order of magnitude as compared to ∼1×1013cm−2 obtained in a conventional GaN-based Al0.2Ga0.8N/GaN heterostructure. With increasing In content of the InxGa1−xN barrier from x=0.05 to 0.15, the 2DEG sheet density decreases from 1.14×1014cm−2 to 0.91×1014cm−2 due to the decreased of polarization charges and the reduced conduction band offset. And the 2DEG density increases slightly with increasing doping level of the InxGa1−xN barrier. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 49
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 15425000
- Full Text :
- https://doi.org/10.1016/j.sse.2004.08.016