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Your search keyword '"Zhao, Sheng Lei"' showing total 1 results
Start Over "Zhao, Sheng Lei" Publisher elsevier b.v.
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1. Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress.

Author

Chen, Wei-Wei, Ma, Xiao-Hua, Hou, Bin, Zhao, Sheng-Lei, Zhu, Jie-Jie, Zhang, Jin-Cheng, and Hao, Yue

Subjects
*RELIABILITY in engineering, *ALUMINUM compounds, *DIELECTRIC materials, *ELECTRON mobility, *ACTIVATION energy, *STRAINS & stresses (Mechanics), *SURFACE cracks
Abstract

Highlights: [•] Recovery property of the device parameters under step-stress is investigated. [•] The maximum output current can recover almost completely after stress. [•] Recovery property can be explained by the trapping and de-trapping procedures. [•] The de-trapping activation energy was evaluated to be 0.30eV. [•] No pits or cracks under the gate contact were found after stress. [Copyright &y& Elsevier]

Published
2014
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