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Electrical stress and 10-keV X-ray irradiation and annealing responses are evaluated for carbon nanotube field effect transistors for nonvolatile memory applications. Less than 3% change in the drain current is observed during constant-voltage stress. Irradiation and annealing under positive gate bias induces more degradation in both drain current and memory window than under negative bias. Cycling of the on/off state leads to significant degradation in the memory window. [ABSTRACT FROM AUTHOR]

Total-ionizing-dose irradiation-induced RF performance degradation is observed in the input-output (IO) and core transistors of a 130 nm SOI NMOS technology. Different MOS structures including Floating Body(FB), T-gate Body(TB) and Tunnel Diode Body Contact(TDBC) SOI structures, were fabricated in a fully-integrated 130 nm SOI process. The radiation-induced DC and RF response of these devices was investigated. The impact of different structures and the use of body contact at PDSOI on the RF TID behavior are discussed by comparing their results to ionizing radiation experiments. • The first study to analyze RF TID response of body contacted and uncontacted body SOI device. • The first study to extract the key parameters in RF TID experiment. • Fmax could degrade more than 50% under irradiation and may cause circuit failure. • Traditional body contact structures not only pay more areas but also degrade TID tolerance both in DC and RF characteristics. [ABSTRACT FROM AUTHOR]

• The zwitterionic pH-responsive polymer micelles (dHAD) were synthesized for efficiently delivering DOX. • The dHAD micelles possessed excellent serum stability and very low cytotoxicity. • The pH-triggered charge-reversal of the dHAD-DOX micelles significantly improved the cellular uptake and cell growth inhibition. • The dHAD-DOX micelles exhibited antitumor therapeutic efficacy with remarkably low systemic toxicity in vivo. As zwitterionic polymers show great promise in drug delivery, hyaluronic acid (HA) was deacetylated and grafted with dodecylamine to prepare a pH-sensitive zwitterionic polymer dHAD used as a carrier for antitumor drugs. The polymer was negatively charged at pH 7.4 and became positive at pH 6.2. In vitro delivery of DOX against MCF-7 cells showed that the blank micelle dHAD had low cytotoxicity and the dHAD-DOX micelles could greatly prohibit the growth of the MCF-7 cells. In addition, the dHAD-DOX micelles had higher cellular uptake, indicating that the micelles were rapidly internalized into the cells via CD44 receptor-mediated endocytosis. The in vivo delivery of DOX to tumor-bearing mice confirmed that the dHAD-DOX micelles greatly inhibited the tumor growth and significantly reduced systemic toxicity of DOX. These results demonstrated that biocompatible pH-responsive zwitterionic dHAD micelles are promising carriers for the delivery of DOX. [ABSTRACT FROM AUTHOR]

Abstract: The magnitude of the low-frequency 1/f noise in GaN/AlGaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions varies in response to hot-electron stress. Density-functional-theory (DFT) calculations show that the Ga vacancies that are responsible for the positive shift in pinch-off voltage due to electrical stress in Ga-rich and N-rich devices do not contribute significantly to the observed changes in 1/f noise with electrical stress. The N anti-sites that cause negative shifts in pinch-off voltage in ammonia-rich devices can cause an increase in the noise magnitude after stress. DFT calculations also show that singly hydrogenated and dehydrogenated Ga–N divacancies also can contribute to the noise before and after stress, respectively. A decrease in noise magnitude is also observed in some devices after stress. [Copyright &y& Elsevier]

Single event burnout (SEB) of NLDMOSFETs on SOI initiated by pulsed laser irradiation is demonstrated for the first time. The sensitive region of the device for SEB and the effects of reverse voltage and laser energy are explored. The data indicate that the device is most sensitive to laser pulses in the drift region near the P-well. This is influenced by the electric field distribution in the drift region of the LDMOSFET at the time of the laser pulse. The SEB threshold depends on both the applied reverse voltage and the laser pulse energy. The laser pulse energy at a given reverse voltage required to initiate SEB is inversely proportional to the laser spot distance from the P-well. Simulation results for the device drain current following the radiation pulse indicate that the behavior of the npn parasitic bipolar transistor inherent in the LDMOS structure can explain the observations. [ABSTRACT FROM AUTHOR]