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Total-ionizing-dose effects and reliability of carbon nanotube FET devices.
- Source :
-
Microelectronics Reliability . Nov2014, Vol. 54 Issue 11, p2355-2359. 5p. - Publication Year :
- 2014
-
Abstract
- Electrical stress and 10-keV X-ray irradiation and annealing responses are evaluated for carbon nanotube field effect transistors for nonvolatile memory applications. Less than 3% change in the drain current is observed during constant-voltage stress. Irradiation and annealing under positive gate bias induces more degradation in both drain current and memory window than under negative bias. Cycling of the on/off state leads to significant degradation in the memory window. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00262714
- Volume :
- 54
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Microelectronics Reliability
- Publication Type :
- Academic Journal
- Accession number :
- 99512225
- Full Text :
- https://doi.org/10.1016/j.microrel.2014.05.011