18 results on '"Rooyackers, R."'
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2. Nanoprober-based EBIC measurements for nanowire transistor structures
3. Multi-gate devices for the 32 nm technology node and beyond: Challenges for Selective Epitaxial Growth
4. Spacer defined FinFET: Active area patterning of sub-20 nm fins with high density
5. Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p–n junction diodes
6. Stress variation across arrays of lines and its influence on LOCOS oxidation
7. Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs
8. Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs
9. Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
10. Drive current enhancement in p-tunnel FETs by optimization of the process conditions
11. Minimization of specific contact resistance in multiple gate NFETs by selective epitaxial growth of Si in the HDD regions
12. Staggered band gap n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions.
13. Quantitative three-dimensional carrier mapping in nanowire-based transistors using scanning spreading resistance microscopy
14. Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs
15. Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering
16. Multi-gate devices for the 32nm technology node and beyond
17. Evaluation of triple-gate FinFETs with SiO2–HfO2–TiN gate stack under analog operation
18. Shift and ratio method revisited: extraction of the fin width in multi-gate devices
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