Search

The interface shear behavior of soil against geosynthetic is important in the design of geosynthetic-reinforced soil structures. This study involves the use of a series of Monotonic Direct Shear (MDS) tests, Cyclic Direct Shear (CDS) tests and Post-cyclic Direct Shear (PCDS) tests to investigate the coarse silica soil-geogrid interface monotonic and cyclic shear behavior. In particular, the influence of cyclic shear on the interface monotonic behavior is analyzed in detail. The effect of soil particle size on interface cyclic and post-cyclic shear behavior is examined and discussed. The results indicate that in cyclic direct shear, the interfaces exhibit cyclic hardening, the interface damping ratio decreased with increasing cycle number and soil relative density, and an interface with a larger particle size has a higher contraction value. In the monotonic condition, the shear stress–displacement curves exhibit post-peak strain softening behavior, and the apparent adhesion and friction angle at the interface both increased with increasing soil particle size. Cyclic shear increased the apparent adhesion at the interface and intensified the soil dilatancy. [ABSTRACT FROM AUTHOR]

The parasitic bipolar effect is investigated in fully-depleted silicon-on-insulator (FD SOI) n-type MOSFETs with ultra-thin films (5–10 nm). Our measurements show that at low drain bias the drain leakage current is governed by the gate current. Beyond V D > 1.0 V, leakage current amplification is observed in short-channel 10-nm thick devices. With film thickness shrinking, the current amplification is suppressed. We explain this amplification by the turn-on of the lateral parasitic bipolar transistor. TCAD simulations confirm that the parasitic bipolar is activated due to holes generated by band-to-band tunneling at the drain side and accumulated in the floating body. An effective method for the extraction of bipolar gain is proposed based on the comparison of leakage current in short- and long-channel devices. The experimental method is validated through simulations. [ABSTRACT FROM AUTHOR]

Abstract: The pseudo-MOSFET (Ψ-MOSFET) method is extended for the electrical characterization of heavily doped (1019–1020 cm−3) SOI wafers with 10–40nm film thickness. The field-effect modulation is small and does not enable the formation of an inversion channel. Only accumulation and depletion-controlled volume conduction modes are activated by increasing the back-gate voltage to 40V. An updated model describing the conduction regimes for heavily doped SOI wafers is derived. This model provides a simple method for parameters extraction such as surface and volume mobility and doping level. Four-point probe and Hall effect measurements fully validate our Ψ-MOSFET results. It is found that high-dose implantation results in good redistribution and electrical activation of impurities, without affecting the quality of the buried oxide and Si–SiO2 interface. [Copyright &y& Elsevier]

A theoretical model is proposed to characterize the transient operation of Pseudo-MOSFET under gate pulses by considering the substrate effect. The analysis provides Zerbst-like expression of drain current with substrate biased in deep-depletion state. The model can be used for the extraction of carrier lifetime with process parameter variations. The dependence of temperature on carrier lifetime was also modeled by including the temperature-dependent parameters (carrier concentration and effective mobility). TCAD simulations and experiments validate our model with the temperature ranging from 300 K to 370 K. [ABSTRACT FROM AUTHOR]

To establish a noninvasive diagnostic method for early assessment of cardiac involvement in Kawasaki disease (KD), 28 children with KD were included in this study. Two-dimensional echocardiography (2D-Echo) to detect the aneurysms of coronary arteries (CA), as well as rest and dipyridamole-stress technetium-99m tetrofosmin (Tc-TF) myocardial perfusion single photon emission computed tomography (SPECT) to detect abnormal myocardial perfusion were performed in all of the 28 children with KD and to compare each other. The results showed that (1) 42.9% of cases had no aneurysm and 57.1% had significant aneurysms detected by 2D-Echo; (2) 42.9% of cases had normal perfusion and 57.1% of cases had abnormal myocardial perfusion assessed by Tc-TF myocardial perfusion SPECT; (3) 25.0% of cases showed both normal 2D-Echo and Tc-TF myocardial perfusion SPECT findings and 39.3% of cases showed both abnormal 2D-Echo and Tc-TF myocardial perfusion SPECT findings; and (4) there was poor agreement between 2D-Echo and Tc-TF myocardial perfusion SPECT findings (P>0.05). We concluded that poor agreement exists between aneurysms and abnormal myocardial perfusion detected by 2D-Echo and Tc-TF myocardial perfusion SPECT findings in patients with KD. [Copyright &y& Elsevier]

• In this paper, the current model of FOI (Fin-On-Insulator) FinFETs is developed, in which the back-channel current is modeled as a parasitic transistor. • This current model exhibits a wide valid range for various geometry parameters. • It is demonstrated that the decreasing fin bottom angle may be useful to boost the drive capability of FOI FinFETs. The current model of FOI (Fin-On-Insulator) FinFETs was developed, in which the back-channel current was modeled as a parasitic transistor. Both the experimental and TCAD simulation results validated the accuracy of the proposed model under different back-gate biases. This current model exhibits a wide valid range for various geometry parameters including fin width, fin height, sidewall inclination angle, fin bottom angle and channel doping density. It was demonstrated that the fin bottom angle had a great influence on the channel current when a positive back-gate bias applied, which may be useful to boost the drive capability of FOI FinFETs. Besides, the mobility influence on our model is also discussed. The proposed model can help to build BSIM model and instruct devices designer to optimize the performance of the devices. [ABSTRACT FROM AUTHOR]

• The PBE in FDSOI transistors is revisited including impact ionization and band-to-band tunneling. • The impact of PBE on the power consumption and performance of SRAM circuits is studied. • A strategy to counter PBE is proposed based on the power analysis of 6T SRAM with back-gate modulation. The parasitic bipolar effect in fully-depleted (FD) silicon-on-insulator (SOI) transistors is revisited including impact ionization and band-to-band tunneling. We tested the transfer characteristic curves for different temperature and drain voltage, combined with TCAD simulation to analyze the dominant mechanism of parasitic bipolar transistor (PBT). In addition, the influence of gate length on PBT has also been analyzed. The current gain β of the PBT was measured at different temperatures and drain voltages. Back-gate biasing was demonstrated to efficiently suppress the bipolar amplification. TCAD simulations showed that the parasitic bipolar effect enhanced the leakage power in circuits. A strategy to counter its effect is proposed based on the power analysis of 6 T SRAM cell with back-gate modulation. [ABSTRACT FROM AUTHOR]

• Tung oil has a time-dependent hardening behaviour. • Fresh Tung oil increases the density of compacted soils. • Hardened Tung oil bonds particles and enhances the unconfined compressive strength. • Tung oil enhances their hydrophobicity with high and persistent contact angles. Earthen construction generates interest due to its environmental and economic advantages such as low embodied energy, thermal comfort and low construction cost. Two challenges, namely durability and strength, hinder its application. Tung oil, a sustainable vegetable oil traditionally applied in waterproofing wooden construction, could improve the water resistance and strength of earthen materials. This study aims to detail the multiple roles and mechanisms of Tung oil as a stabilizer. Completely decomposed granite, a natural mineral soil, was selected to assess the influence of Tung oil and its time-hardening behavior on the compaction behaviour, unconfined compressive strength and hydrophobicity. Results revealed that: (1) fresh Tung oil could simultaneously increase the density of compacted soils and decrease the water required for compaction. (2) Tung oil hardened during drying, bonding soil particles and enhancing the unconfined compressive strength of the compacted soils. (3) Hydrophobicity of the stabilized soils were also enhanced, with high and persistent contact angles, which could further contribute to its durability and minimize water-induced damage. [ABSTRACT FROM AUTHOR]

Total and near-total lower lip reconstruction - 20 years experience. [Extracted from the article]

Abstract: High-quality monolayer graphene films with large area were grown on Cu foils by the chemical vapor deposition (CVD) technique. For the first time, graphene saturable absorbers (SAs) with well-defined layer numbers were fabricated by controlling of transfer process precisely. Using the graphene SAs, stable Q-switched mode-locking pulse trains with a nearly 100% modulation depth were realized in a diode-pumped YVO4/Nd:YVO4 laser. At the pump power of 6.0W, the average output power reached a high value of 1.6W. To the best of our knowledge, this is the highest output power of passively mode-locked solid-state laser using graphene SA, suggesting that the low-cost, broadband graphene SA could potentially be employed in practical high-power mode-locking laser system. [Copyright &y& Elsevier]

Abstract: Objective: The aim of this work was to construct one small interfering RNA (siRNA) eukaryotic expression vector targeting rat nuclear factor (NF)κB p65 and identify its inhibition effect on cell proliferation according to its down-regulation of NF-κB pathway. Methods: The p65siRNA expression vector “pGenesil-1.2-p65siRNA” and negative control plasmid “HK” were transfected into the cultured rat cells. After transfection, cells were divided into 4 treatment groups: 1) control cells cultured in complete. Dulbecco modified Eagle medium; 2) lipopolysaccharide (LPS) (1 μg/mL); (3) LPS (1 μg/mL) + HK-transfected; 4) LPS (1 μg/mL) + p65siRNA (pGenesil-1.2-p65siRNA). Thereafter, the protein levels of NF-κB p65 in the cells were detected by Western blotting at 72 hours after LPS stimulation. Furthermore, to observe cell proliferation, the proliferative rate of the cell growth was evaluated by the methylthiazolyl tetrazolium assay (at 24, 48, and 72 hours). The cell cycle distribution at 72 hours was detected by flow cytometry. Results: p65siRNA effectively down-regulated the protein level of p65 (P < .05). Meanwhile, the proliferation of cells transfected with p65siRNA expression vector was significantly inhibited (P < .05), the ratio of cells at G0/G1 stage markedly increased, and the proportion of cells at S stage was significantly decreased among transfected compared with control cells (P < .05). Conclusions: p65siRNA effectively suppressed NF-κB, expression, inhibiting rat cell proliferation induced by NF-κB signal pathway activation. [Copyright &y& Elsevier]

Twin- and crack-free single crystals of (La,Sr)(Al,Ta)O3 with mixed-perovskite structure have been grown using the Czochralski method. These new crystals with a typical size of 55 mm in diameter and 50 mm in length are potential substrate candidates for growing large size and epitaxial HTS and GaN films. Their dielectric constant and dielectric loss at room temperature are 23 and 1×10−4, respectively. [Copyright &y& Elsevier]

Organo-functionalized MCM-41 containing non-covalently linked 1,10-phenanthroline (denoted as Phen-MCM-41) was synthesized by template-directed co-condensation of tetraethoxysilane and the modified phenanthroline (denoted as Phen-Si). XRD, FTIR, UV/VIS spectroscopy as well as luminescence spectroscopy were employed to characterize Phen-MCM-41. No disintegration or loss of the Phen-Si during the solvent extraction procedure could be observed. When monitored by the ligand absorption wavelength (272 nm), the undoped MCM-41 produces a broad band emission centered at 450 nm, whereas europium (III) doped Phen-MCM-41displays the emission of the Eu3+, i.e., 5D0→7FJ (J=0, 1, 2, 3, 4) transition lines due to the energy transfer from the ligands to Eu3+ as well as a broad band emission centered at 442 nm. [Copyright &y& Elsevier]