Characterization of heavily doped SOI wafers under pseudo-MOSFET configuration.

Abstract: The pseudo-MOSFET (Ψ-MOSFET) method is extended for the electrical characterization of heavily doped (1019–1020 cm−3) SOI wafers with 10–40nm film thickness. The field-effect modulation is small and does not enable the formation of an inversion channel. Only accumulation and depletion-controlled volume conduction modes are activated by increasing the back-gate voltage to 40V. An updated model describing the conduction regimes for heavily doped SOI wafers is derived. This model provides a simple method for parameters extraction such as surface and volume mobility and doping level. Four-point probe and Hall effect measurements fully validate our Ψ-MOSFET results. It is found that high-dose implantation results in good redistribution and electrical activation of impurities, without affecting the quality of the buried oxide and Si–SiO2 interface. [Copyright &y& Elsevier]