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We report a systematic study on the growth conditions of ${\mathrm{Sn}}_{1\text{\ensuremath{-}}x}{\mathrm{In}}_{x}\mathrm{Te}$ thin films by molecular beam epitaxy for maximization of superconducting transition temperature ${T}_{\mathrm{c}}$. Careful tuning of the flux ratios of Sn, In, and Te enables us to find an optimum condition for substituting rich In content $(x=0.66)$ into the Sn site in a single phase of ${\mathrm{Sn}}_{1\text{\ensuremath{-}}x}{\mathrm{In}}_{x}\mathrm{Te}$ beyond the bulk solubility limit at ambient pressure $(x=0.5)$. ${T}_{\mathrm{c}}$ shows a dome-shaped dependence on In content $x$ with the highest ${T}_{\mathrm{c}}=4.20\phantom{\rule{0.16em}{0ex}}\mathrm{K}$ at $x=0.55$, being consistent to that reported for bulk crystals. The well-regulated ${\mathrm{Sn}}_{1\text{\ensuremath{-}}x}{\mathrm{In}}_{x}\mathrm{Te}$ films can be a useful platform to study possible topological superconductivity by integrating them into the state-of-the-art junctions and/or proximity-coupled devices.

Superconductivity in the doped topological crystalline insulator ${\mathrm{Sn}}_{1\ensuremath{-}x}{\mathrm{In}}_{x}\mathrm{Te}$ is studied by first-principles calculation based on superconducting density functional theory (SCDFT) and tunneling spectroscopy. By considering the spin-orbit coupling and frequency dependence of the screened Coulomb interaction in SCDFT, we succeed in reproducing the critical temperature of ${\mathrm{Sn}}_{1\ensuremath{-}x}{\mathrm{In}}_{x}\mathrm{Te}$ quantitatively, in which the spin-orbit coupling is found to play an essential role. The leading gap function is a conventional $s$ wave with moderate anisotropy in $\mathbit{k}$ space, and we find that the subdominant odd-parity instability is significantly weaker than the $s$-wave instability. We perform tunneling spectroscopy measurement and confirm that the spectrum is consistent with the calculated gap function.

We have studied the fundamental properties of weak-link ${\mathrm{Sr}}_{2}{\mathrm{RuO}}_{4}/{\mathrm{Sr}}_{2}{\mathrm{RuO}}_{4}$ Josephson junctions fabricated by making a narrow constriction on superconducting ${\mathrm{Sr}}_{2}{\mathrm{RuO}}_{4}$ films through laser micropatterning. The junctions show a typical overdamped behavior with much higher critical current density compared with those previously reported for bulk ${\mathrm{Sr}}_{2}{\mathrm{RuO}}_{4}/s$-wave-superconductor junctions. Observed magnetic-field and temperature dependencies of the Josephson critical current suggest that the chiral $p$ wave is unlikely for the superconducting symmetry, encouraging further theoretical calculations of the ${\mathrm{Sr}}_{2}{\mathrm{RuO}}_{4}/{\mathrm{Sr}}_{2}{\mathrm{RuO}}_{4}$-type junctions.

The impact of electron correlation on the Dirac semimetal state is investigated for perovskite ${\text{CaIrO}}_{3}$ in terms of the magnetotransport properties under varying pressures. The reduction of electron correlation with a pressure of 1 GPa enhances the Fermi velocity as much as 40%, but it reduces the mobility by an order of magnitude by detuning the Dirac node from the Fermi energy. Moreover, the giant magnetoresistance at the quantum limit due to the one-dimensional confinement of Dirac electrons is critically suppressed under pressure. These results indicate that the electron correlation is a crucial knob for controlling the transport of a correlated Dirac semimetal.

We report large enhancement of upper critical field ${H}_{\mathrm{c}2}$ observed in superconducting ${\mathrm{Sr}}_{2}{\mathrm{RuO}}_{4}$ thin films. Through dimensional crossover approaching two dimensions, ${H}_{\mathrm{c}2}$ except the in-plane field direction is dramatically enhanced compared to bulks, following a definite relation distinct from bulk one between ${H}_{\mathrm{c}2}$ and the transition temperature. The anomalous enhancement of ${H}_{\mathrm{c}2}$ is highly suggestive of important changes of the superconducting properties, possibly accompanied with rotation of the triplet $d$ vector. Our findings will become a crucial step to further explore exotic properties by employing ${\mathrm{Sr}}_{2}{\mathrm{RuO}}_{4}$ thin films.

We theoretically investigate the dynamical nuclear spin polarization in a quantum point contact (QPC) at finite magnetic field. We find that when the QPC is tuned to be spin selective, at the conductance of e^2/h, a finite bias induces a dipole-like (spatially anti-symmetric) nuclear polarization: at the QPC center the polarization is zero, while, for GaAs parameters, the nuclear spins down (up) are induced on the source (drain) side. We predict that the dipole-like polarization pattern can be distinguished from a uniform polarization due to a qualitatively different response of the QPC conductance to the NMR field., Comment: 17 pages, 8 figures; referees' comments incorporated, some typos corrected, footnotes' format changed

We investigate Dirac fermions on the surface of the topological insulator ${\text{Bi}}_{2}{\text{Se}}_{3}$ using scanning tunneling spectroscopy. Landau levels (LLs) are observed in the tunneling spectra in a magnetic field. In contrast to LLs of conventional electrons, a field-independent LL appears at the Dirac point, which is a hallmark of Dirac fermions. A scaling analysis of LLs based on the Bohr-Sommerfeld quantization condition allowed us to determine the dispersion of the surface band. Near the Fermi energy, fine peaks mixed with LLs appear in the spectra, which may be responsible for the anomalous magnetofingerprint effect [J. G. Checkelsky et al., Phys. Rev. Lett. 103, 246601 (2009)].

We study dynamic nuclear polarization (DNP) induced by breakdown of the fractional quantum Hall (FQH) effect. We find that voltage-current characteristics depend on current sweep rates at the quantum Hall states of Landau level filling factors $\nu$ = 1, 2/3, and 1/3. The sweep rate dependence is attributed to DNP occurring in the breakdown regime of FQH states. Results of a pump and probe experiment show that the polarities of the DNP induced in the breakdown regimes of the FQH states is opposite to that of the DNP induced in the breakdown regimes of odd-integer quantum Hall states., Comment: 4 pages, 4 figures

We study the edge-channel transport at quantum Hall (QH) transition regions for a high-mobility $\mathrm{Si}∕\mathrm{Si}\mathrm{Ge}$ QH conductor by measuring nonlocal resistance $({R}_{\mathrm{NL}})$. The ${R}_{\mathrm{NL}}$ as a function of magnetic field changes drastically after Landau-level crossings. The features of the ${R}_{\mathrm{NL}}$ depend on the spin configuration between the innermost edge channel and the bulk state: the ${R}_{\mathrm{NL}}$ appears only when the relevant edge-bulk states have opposite spin orientations. Also, an origin of the spin-dependent resistivity [Phys. Rev. Lett. 94, 176402 (2005)] at QH transition regions is discussed in terms of the spin-dependent inter-edge-bulk scattering.

We report magntetotranport measurements around a filling factor $\ensuremath{\nu}=\frac{3}{2}$ of two-dimensional electron gas under weak unidirectional periodic potential modulation. Composite fermions (CF's) at $\ensuremath{\nu}=\frac{3}{2}$ which are the electron-hole conjugate of $\ensuremath{\nu}=\frac{1}{2}$ CF's, show positive magnetoresistance (PMR) and oscillatory magnetoresistance---commensurability oscillation (CO)---for a modulation period of $a=92\mathrm{nm}.$ Minima of the CO occur at the positions expected for commensurability with effective magnetic-field modulation, and are consistent with the field-dependent Fermi wave number ${k}_{F}$ resulting from field-dependent density of the $\ensuremath{\nu}=\frac{3}{2}$ CF's. The positions are consistent with ${k}_{F}$ for fully spin-polarized CF's, except for one dip which is better explained by a fully spin-unpolarized ${k}_{F},$ smaller by factor $\sqrt{2}$ than its spin-polarized counterpart. With the introduction of in-plane magnetic field by tilting, the PMR shows unexpected asymmetry: it grows both in its magnitude and extent on the lower-field side, while it shrinks on the higher-field side.