1. Room-temperature diffusive phenomena in semiconductors: The case of AIGaN.
- Author
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Warnick, Keith H., Puzyrev, Yevgeniy, Roy, Tania, Fleetwood, Daniel M., Schrimpf, Ronald D., and Pantelides, Sokrates T.
- Subjects
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SEMICONDUCTORS , *ACTIVATION energy , *ELECTRIC fields , *FIELD theory (Physics) , *ELECTROMAGNETIC fields - Abstract
Diffusion mediated by native point defects does not generally occur in semiconductors at room temperature (RT) because of high activation energies. However, recently observed plastic deformation in AIGaN/GaN structures in the presence of strain and electric fields was attributed to diffusive processes. Here, we report first-principles calculations showing that strain has little effect, but RT mass transport is enabled by near-zero formation energy of triply negative cation vacancies and a concomitant electric-field-induced lowering of migration energy. Similar phenomena are predicted to occur in other large-gap materials. [ABSTRACT FROM AUTHOR]
- Published
- 2011
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