1. Role of remote interfacial phonons in the resistivity of graphene.
- Author
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You, Y. G., Ahn, J. H., Park, B. H., Kwon, Y., Campbell, E. E. B., and Jhang, S. H.
- Subjects
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PHONONS , *PHONON scattering , *SURFACE scattering , *TRANSITION temperature , *ELECTRICAL resistivity , *CHARGE transfer - Abstract
The temperature (T) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates: HfO2, SiO2, and h-BN. The resistivity of graphene shows a linear T-dependence at low T and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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