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Topological quantum phenomena due to the presence of both Dirac fermions and flat bands in Kagome semimetal CoSn promise novel transport properties. In Kagome materials, the transport properties can be enhanced by moving the position of the flat band and Dirac fermions with doping. Here, we have investigated the magnetotransport and electronic properties by Fe doping in CoSn. A large positive magnetoresistance (MR) of ≈ 105% at 3 K and 8 T magnetic field has been observed in CoSn. Fe doping in Co 1 − x FexSn gives rise to negative MR with a large negative value for x = 0.2 (−8.4%) but decreases for x = 0.3 (−3.7%) and x = 0.4 (−2.7%). Tuning of MR from positive to negative values with Fe doping in CoSn is associated with the changes in energy position of the localized flat band and emergence of quasi-localized states near the Fermi level. The systematic variation of MR with increasing x depends both on the structural changes due to increase in the lattice parameters and on the near neighbor interactions of the Sn atoms with the Co atoms in the Kagome plane. The origin of quasi-localized states is associated with the electron hopping and the variation in the strength of localization with doping that leads to tunable MR properties in Co 1 − x FexSn. [ABSTRACT FROM AUTHOR]

We present the result of a multiple phase level Talbot array illuminator (TAI) based on two dimensional phase grating. The grating was fabricated on glass by a Deep Reactive Ion Etching (DRIE) system with optimized gas combination recipe. The opening ratio of the grating is ~0.71 with a phase step of 11π. The experimental study on Talbot array illuminations (TAI's) of this fabricated device in near-field region was carried out using a He-Ne laser. The TAI's were observed at the positions 2.81 mm, 8.59 mm, 14.28 mm, and 20.57mm along the light propagation direction. The computer simulations of wave field distribution in near field region at different fractional Talbot distances have been generated. These simulated results are in reasonably good agreement with our experimental observed results. Our analysis on Talbot array illumination (TAI's) shows that the multiple harmonic phase modulations are transformed into intensity modulations at 1/8, 3/8, 5/8, and 7/8 fractional Talbot position. We have observed three different grating images, viz., attenuated, phase contrast, and diffraction contrast images. We also show the presence of a considerable amount of phase change at the edge of each phase sublevel that enhances the contrast of differential phase contrast imaging. Therefore, the phase contrast signal can be detected at a fractional position using single phase grating without the need of phase stepping. [ABSTRACT FROM AUTHOR]

A bandgap bowing parameter of 0.4 ± 0.2 eV for β-(AlxGa1−x)2O3 alloys, with Al compositions (x) up to 0.35, has been determined from the bandgap obtained from low temperature optical reflectivity, which suppresses the effect of electron–phonon interaction on the bandgap. A length scale of inhomogeneity of 0.21 ± 0.03 times of the electron–hole mean free path length has been estimated for β-(AlxGa1−x)2O3 alloys. The unit cell of β-(AlxGa1−x)2O3 alloys compresses, and the lattice parameters vary linearly with Al substitution. Our results provide insight into bandgap engineering and alloy disorder for β-(AlxGa1−x)2O3 alloys, which are an important material system for applications in deep ultraviolet opto-electronic devices. [ABSTRACT FROM AUTHOR]

We have studied the electrical resistivity, magnetization, and heat capacity of the off-stoichiometric Heusler alloys Ni50Mn35In15 and Ni50Mn34.5In15.5 as functions of temperature and magnetic field. The results show that the alloy system is more sensitive to the composition than what is apparent from the established phase diagram. We have found that the ground states as well as the nature of phase transitions strongly depend on concentration differences as low as 0.5 at. %. While in the case of Ni50Mn34.5In15.5 we do observe a magnetic field induced martensite to austenite phase transition, there is no detectable signature of any field induced transition in the Ni50Mn35In15 alloy even up to fields as high as 80 kOe. Accordingly, the functional properties of these two alloys are also drastically different. [ABSTRACT FROM AUTHOR]

We have studied the effect of annealing (at temperatures 300, 400, and 500 °C) on nanoparticulate CdS film on silicon substrate deposited by hybrid Langmuir–Blodgett chemical bath deposition technique. Width, intensity, and the line shape of the longitudinal optical phonon in Raman spectra and photoluminescence (PL) spectra suggest that the annealing brings about coalescence of nanoparticles at 300 °C, increasing the size of the nanoparticles and also increases the red region PL related to surface states. Annealing at 400 °C leads to two different coexistent states, showing larger nanoparticles and bulklike film. On further annealing at 500 °C, PL shows a drastic redshift to PL of bulklike CdS. This is well brought out by resonance Raman measurements and later confirmed by scanning electron microscope data. Most interesting observation is that PL and Raman results together are indicative of phase transformation of nanoparticulate hexagonal CdS film to bulklike cubic CdS film on annealing at 500 °C, unlike cubic to hexagonal structural phase transition observed in bulk CdS films. [ABSTRACT FROM AUTHOR]

Hematite (α-Fe2O3) nanowires have been synthesized on a large surface area by thermal oxidation of iron foil in an ozone-rich environment. The effects of annealing time, temperature, and oxidizing environment on the growth of nanowires have been systematically studied. The samples were characterized using scanning electron microscope (SEM), transmission electron microscope (TEM), x-ray diffraction (XRD), and x-ray photoelectron spectroscopy (XPS). It was found that annealing in ozone-rich environment for 2–4 h at 700 °C yielded the best results in terms of number density and diameter of nanowires. The average diameter of the nanowires was found to be 85 nm. It was found that nanowires are bicrystal in nature with a length around 4 μm, which grows uniquely along the [110] direction. [ABSTRACT FROM AUTHOR]

Nanotextured high density Mg-doped and undoped GaN were obtained using photoelectrochemical etching. Interesting features are observed in the temperature dependent photoluminescence (PL) studies of these nanotextured materials. First, the PL intensity of the excitonic emissions shows more than three orders of enhancement. At low temperature, the peak energy shows a blueshift with temperature. This phenomenon is attributed to the formation of excitonic band-tail states. Second, the excitonic emissions in the nanotextured samples are redshifted compared to the as-grown GaN suggesting strain relaxation. Third, the blue luminescence band (2.7–2.9 eV in Mg-doped GaN) shows a large redshift, which is not consistent with strain relaxation calculated from excitonic band. Furthermore, temperature dependence of the blue luminescence band energy shows an asymmetric S-shaped behavior in nanotextured GaN. All these observations are explained by invoking an increase in carrier localization due to an increase in potential fluctuation created by the nanotexturization process. [ABSTRACT FROM AUTHOR]

In the present work, the authors report on the role of a self-catalyst (indium) and a substrate surface in various growth mechanisms and the crystalline structure of InAs nucleating layers on Ge (111) using metal organic vapor phase epitaxy. This study opens up the possibility of direct integration of InAs with Ge (111) substrates for next generation optoelectronic and microelectronic device applications. Different nucleation modes like droplet-epitaxy (DE), Volmer-Weber (VW), and Frank-Van der Merwe (FM) modes are observed in various growth windows. DE and FM modes are the dominating nucleation modes at lower growth temperature (400-470 °C) with the assistance of indium catalysts, while the VW mode dominates at higher growth temperature (470-540 °C). Three dimensional faceted structures are formed with varying densities in the overall growth temperature range of 400-540 °C, which is attributed to various factors like surface strain of the indium adatom covered Ge (111) surface, indium surface diffusion, and twin defect formation. High resolution x-ray diffraction identifies the twin formation at low growth temperature. Raman mapping reveals that InAs nano-/microstructures grow with a zinc blende-wurtzite polytypic crystal structure at higher growth temperature and arsenic-rich conditions. A comparison is made on the growth modes, morphology, and polytypism in InAs nanostructures, which are grown on Ge (111) and Si (111) substrates under identical conditions. Low surface diffusivity of indium on the Ge substrate and InAs/Ge interface energy are proposed as the main factors for the inhibition of anisotropic axial growth of InAs on Ge via the vapor-liquid-solid mode, while they succeed on the Si substrate. [ABSTRACT FROM AUTHOR]

A novel and scalable method to fabricate tungsten Fresnel zone plate (FZP) structures with a high aspect ratio using the wet etching method is presented. FZPs with an outermost zone width of 370 nm and a height of 1.1 μm were fabricated in tungsten on a 35 lm polyimide film. They were designed for a focal length of 50 cm at 8 keV such that the radius is 100 μm for 142 zones, with an opaque center zone. The fabrication method presented is a simple single step resist process. The testing of FZP was carried out at the Indus-2 synchrotron source, where focusing was observed as per design parameters. The transmission characteristics of polyimide coupled with the phase shifting properties of tungsten make the FZP useful also at lower energies. An improvement in the zone plate structural parameters and hence its performance has also been discussed. [ABSTRACT FROM AUTHOR]

In this work three different growth methods have been used to grow β-Ga2O3 nanostructures. The nanostructures were characterized by Grazing Incident X-Ray Diffraction, Scanning Electron Microscopy, Transmission Electron Microscopy and Photoluminescence Spectroscopy. Photoluminescence spectra for all the samples of β-Ga2O3 nanostructures exhibit an UV and blue emission band. The relative intensity of UV and blue luminescence is strongly affected by the surface defects present on the nanostructures. Our study shows that Photoluminescence intensity of UV and blue luminescence can be reliably used to determine the quality of β-Ga2O3 nanostructures. Further the work opens up the possibility of using UV excitation and subsequent Photoluminescence analysis as a possible means for oxygen sensing. The Photoluminescence mechanism in β-Ga2O3 nanostructures is also discussed. [ABSTRACT FROM AUTHOR]

Gallium phosphide (GaP) epitaxial layer and nanostructures are grown on n-Ge(111) substrates using metal organic vapour phase epitaxy. It is confirmed by high resolution x-ray diffraction measurements that the layer is highly crystalline and oriented with the coexistence of two domains, i.e., GaP(111)A and GaP(111)B, with an angle of 60℃ between them due to the formation of a wurtzite monolayer at the interface. The valence band offset between GaP and Ge is 0.760.1 eV as determined from the valence band onsets and from Kraut's method. A band alignment diagram for GaP/Ge/GeOx is also constructed which can be used to design monolithic optoelectronic integrated circuits. [ABSTRACT FROM AUTHOR]

β-Ga2O3 nanostructures were synthesized via vapor transport method on gold coated Silicon substrate in N2 ambient. The as synthesized products were investigated by grazing incident X-ray diffraction, scanning electron microscopy and photoluminescence (PL) spectroscopy. It is shown that the intensity of photoluminescence from the ensemble of β-Ga2O3 nanostructures in oxygen gas ambience is correlated with the oxygen pressure through the Langmuir equation. This correlation is found to be reversible and reproducible. This phenomenon, which was not observed in the bulk β-Ga2O3 single crystal, is attributed to the oxygen related shallow trap surface states of the nanostructures with energies at about 4.2 eV above the valance band. Based on the changes in the PL intensity with the oxygen pressures, a possible mechanism for the observed photoluminescence is suggested. The present results provide a route for room-temperature response of oxygen in the gallium oxide nanostructures. [ABSTRACT FROM AUTHOR]

β-Ga2O3 nanostructures (nanowires, nanoribbons, and nanosheets) were synthesized via vapor transport method on gold coated silicon substrate in N2 ambient and these β-Ga2O3 nanostructures grown on silicon substrates were taken as the starting material to study the effect of annealing in the different environments (oxygen, water vapour, and ammonia solution) on the structural front and photoluminescence (PL) properties. The PL spectra of β-Ga2O3 nanostructures exhibit a UV-blue emission band whose intensity is strongly affected by the annealing in different environments. Annealing modifies the surface of the nanostructures by creating surface states which quench the PL by creating competitive nonradiative paths. This study also indicates the dominance of the formation of water induced surface states over ammonia induced surface states. The irreversible nature of these defects significantly affects the applicability of this system in moist high temperature environments. [ABSTRACT FROM AUTHOR]