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The in situ growth dynamics of colloidal silver–gold core–shell (Ag@Au CS) nanoparticles (NPs) are studied using time-dependent second harmonic generation (SHG) and extinction spectroscopy. Four sequential additions of chloroauric acid, sodium citrate, and hydroquinone are added to a silver nanoparticle solution to form a gold shell around a 45 nm silver core under different reaction conditions, resulting in final sizes ranging from 80 to 125 nm in diameter. In the first addition, a bumpy, urchin-like surface morphology is produced, while the second, third, and fourth additions provide additional nanoparticle growth with the surface morphology becoming more smooth and uniform, as shown using transmission electron microscopy measurements. The in situ extinction spectra increase in intensity for each addition, where blue-shifting and spectral narrowing are observed as the Ag@Au CS NPs grow in size. The extinction spectra are compared to Mie theory simulations, showing general agreement at later stages of the reactions for smooth CS surfaces. The in situ SHG signal is dominated by surface-enhanced plasmonic hotspots at the early stages of the shell growth, followed by gradual decreases in signal as the surface becomes more smooth. Two-photon fluorescence is also monitored during the CS growth, showing complementary information for comparisons to the extinction and SHG results. The holistic study of the synthesis and characterization of Ag@Au CS nanoparticles using in situ SHG spectroscopy, extinction spectroscopy, and Mie theory simulations allows for a comprehensive analysis of the complex growth dynamics occurring at the nanoscale for developing optimized plasmonic nanomaterial properties. [ABSTRACT FROM AUTHOR]

Nonpolar (100), polar (002), semipolar (101), and nonpolar (110) preferred oriented ZnO films were synthesized by regulated growth using the chemical bath deposition method. The crystallinity, surface morphology, and optical properties of ZnO films with different preferred orientations after annealing in different atmospheres were systematically investigated. The experimental results show an increase in crystallinity and a decrease in surface roughness of the films after annealing; in particular, the optical transmittance of semipolar (101) preferred oriented ZnO films was significantly higher than that of the other samples. XPS and PL spectra confirmed that annealing in argon effectively increased donor defects, whereas annealing in oxygen and ozone reduced donor defects in the films, and that ozone annealing was best suited to enhance acceptor defects in nonpolar (110) preferred oriented ZnO films. Argon annealing is the best for the enhancement of donor defects in polar (002) preferred oriented ZnO films. This work achieves modulation of optical properties and defects of ZnO films by annealing in different atmospheres, which provides new ideas for the application of ZnO materials. [ABSTRACT FROM AUTHOR]

In this study, Pb(Zr0.54Ti0.46)O3 films were prepared by the sol-gel method with Sm doping concentrations of 0, 0.5, 1, 1.5, 2, and 3 mol. %. Their surface morphology, density, crystal structure, piezoelectric, dielectric, and ferroelectric properties were characterized. The results indicated that, unlike Sm-doped lead zirconate titanate (PZT) ceramics, all Sm-PZT films exhibit a significant increase in the grain size compared to undoped PZT films. Moreover, Sm doping affected their crystal orientation and significantly enhanced their piezoelectric coefficient d33 and remnant polarization (Pr). Notably, the Sm-PZT film with a doping concentration of 1.5 mol. % exhibited optimal (100) orientation, achieving a high piezoelectric coefficient d33 of 279.87 pm/V, 4.55 times that of the non-doped PZT films. [ABSTRACT FROM AUTHOR]

We conduct molecular dynamics simulations of helium in tungsten to study the interaction of helium with grain boundaries. Model systems with grain boundary planes perpendicular to the surface and parallel to the surface are considered. The net attraction of mobile helium to the grain boundary results in a "depleted region" within approximately 3.5 nm of the grain boundary plane at low fluence, and once on the plane of the grain boundary, helium transport slows considerably. Helium retention is also strongly affected by the grain boundaries and their density: grain boundary planes approximately 6 nm beneath the plasma-facing surface and parallel to the surface tend to reduce the maximum bubble size due to the attraction of mobile clusters to the grain boundary plane, which lowers the concentration of helium near the surface (where it is being implanted); grain boundaries perpendicular to the surface tend to increase retention due to retention on the grain boundary plane. For grain boundaries parallel to the surface, the strong gettering effect of the grain boundaries on helium results in essentially no helium penetration through the grain boundary during the first 1.5 μs of plasma exposure at a flux of 1.6 × 10 25 m − 2 s − 1 , corresponding to fluences on the order of 10 20 m − 2 . Coarse-grained simulations capable of capturing the long-term dynamics of helium aggregation near grain boundaries would be required to determine whether these effects would have any measurable impact on phenomena, such as tungsten fuzz growth. [ABSTRACT FROM AUTHOR]

We report about metalorganic vapor phase epitaxy of smooth nitrogen-polar AlN templates on vicinal (0001) sapphire substrates. The influence of the V/III ratio, growth temperature, growth rate, as well as sapphire-nitridation time and temperature, were studied. With 4° offcut sapphire, step-flow growth was possible only with V/III ratios below 2. However, the optimal V/III ratio required precise adjustment, possibly dependent on reactor history and geometry. A rather narrow temperature window of less than 40 °C existed for smooth surface morphology. Reducing the temperature affected adatom mobility, eventually disrupting step-flow growth; increasing the temperature favored the formation of high-aspect-ratio defects on the epilayer. A low thermal-budget nitridation step with a short nitridation time of 15 s proved to be effective in controlling polarity without inducing excessive surface damage on the sapphire substrate. The growth rate also influenced surface morphology, with an increase in RMS roughness and step-bunching for faster growths until at growth rates above 1.4 μm/h step-flow growth could no longer occur. Finally, we developed a V/III ratio fine-tuning procedure, whereby the reactor-specific value that induces optimal growth is inferred by growth-rate variations. With this method, N-polar AlN templates with sub-nanometer RMS roughness were demonstrated for both 4° and 2° offcut sapphire substrates. [ABSTRACT FROM AUTHOR]

Face-to-face annealed and sputter-deposited aluminum nitride (FFA Sp-AlN) has potential in deep-ultraviolet light-emitting devices. Herein, the effects of the substrate off-cut angle (θsub) from an r-plane sapphire toward the c-axis projection direction and sputtering temperature (Tsp) on the crystallinity and surface morphology of a-plane AlN films are investigated. Increasing θsub in the minus-off direction, which occurs when the substrate surface approaches the sapphire c-plane, and lowering Tsp suppress the mixing of anomalous non-a-direction oriented domains. This reduced mixing enhances the surface flatness and crystallinity of a-plane FFA Sp-AlN. Moreover, the c-axis direction of the a-plane AlN film is inverted depending on the substrate off-cut angle. Ab initio calculations indicate that the interface stability between the r-plane sapphire substrate and the a-plane AlN film can explain the dependence of the crystallinity and c-axis orientation of FFA Sp-AlN on the surface off-cut of the r-plane sapphire. [ABSTRACT FROM AUTHOR]

Identifying the oxidation structure of two-dimensional interfaces is crucial to improve surface chemistry and electronic properties. Beyond graphene with only phenyl rings, a novel carbon-nitrogen material, C3N, presents an intrinsic heterogeneous surface morphology where each phenyl ring is encircled by six nitrogen atoms, yet its atomistic oxidation structure remains unclear. Here, combining a series of density functional theory calculations and ab initio molecular dynamics simulations, we demonstrate that thermodynamically favorable oxidation loci are confined to the phenyl ring, and kinetic transformations of oxidation structures are feasible along the phenyl ring, whereas those toward nitrogen atoms are proven to be extremely difficult. These results are attributed to the lower barrier of oxygen atom migration along the phenyl ring, while the significantly high barriers toward nitrogen atoms are due to the heterogeneous potential energy surface for oxygen–C3N interaction. This work highlights the significance of surface morphology on the characteristics of oxidation structure, offering insights into tunable electronic properties via confined interfacial oxidation. [ABSTRACT FROM AUTHOR]

We experimentally demonstrate the in situ characterization of optical micro/nano fibers (MNFs). The MNF (test fiber, TF) is positioned on a microfiber (probe fiber, PF) and simulated for the scattering loss at various PF and TF diameters. The TF is fabricated using chemical etching technique. The PF is a conventional single-mode fiber with an outer diameter of 125 μ m. We measure the scattering loss along the TF axis at various positions i.e., diameters by mounting it on the PF. The diameter profile of the TF is inferred from the measured scattering loss and correlated with its surface morphology measurement. This work demonstrates an effective, low-cost, and non-destructive method for in situ characterization of fabricated MNFs. It can detect and determine the irregularities on the surface of OMNFs. It can also be used to quantify the local evanescent field. Detecting such local points can improve studies that are carried out using these fields in various sensing and related study domains. It is simple to implement and can be accessed by all domains of researchers. [ABSTRACT FROM AUTHOR]

In this work, we demonstrate an in situ etch technique for β-Ga2O3 inside a metalorganic chemical vapor deposition (MOCVD) reactor using triethylgallium (TEGa) as the etching agent. At sufficiently high substrate temperatures (Tsub), TEGa is introduced into the MOCVD reactor which undergoes pyrolysis, resulting in the deposition of Ga on the β-Ga2O3 surface. These Ga adatoms react with Ga2O3 to form gallium suboxide (Ga2O), which desorbs from the β-Ga2O3 surface resulting in the etching of the epilayer. MOCVD chamber parameters such as TEGa molar flow rate, substrate temperature, and chamber pressure were shown to be key in controlling the etch rate and surface morphology. A wide range of etch rates from ∼0.3 to 8.5 μm/h is demonstrated by varying the etch parameters. In addition, smooth surface morphology on (010) and (001) β-Ga2O3 substrates is also demonstrated. This new etch technique could enable damage free fabrication of 3D structures like fins and trenches, which are key components in many β-Ga2O3 device structures. [ABSTRACT FROM AUTHOR]

We investigated the chemical beam epitaxy of GaP 1 − x N x grown on nominally (001) -oriented Si substrates, as desired for the lattice-matched integration of optoelectronic devices with the standard Si technology. The growth mode and the chemical, morphological, and structural properties of samples prepared using different growth temperatures and N precursor fluxes were analyzed by several techniques. Our results show that, up to x ≈ 0.04 , it is possible to synthesize smooth and chemically homogeneous GaP 1 − x N x layers with a high structural quality. As the flux of the N precursor is increased at a given temperature to enhance N incorporation, the quality of the layers degrades upon exceeding a temperature-dependent threshold; above this threshold, the growing layer experiences a growth mode transition from 2D to 3D after reaching a critical thickness of a few nm. Following that transition, the morphology and the chemical composition become modulated along the [ 110 ] direction with a period of several tens of nm. The surface morphology is then characterized by the formation of { 113 } -faceted wires, while the N concentration is enhanced at the troughs formed in between adjacent (113) and (1 ¯ 1 ¯ 3). On the basis of this study, we conclude on the feasibility of fabricating homogeneous thick GaP 1 − x N x layers lattice matched to Si (x = 0.021) or even with N content up to x = 0.04. The possibility of exceeding a N mole fraction of 0.04 without inducing coupled morphological–compositional modulations has also been demonstrated when the layer thickness is kept below the critical value for the 2D–3D growth mode transition. [ABSTRACT FROM AUTHOR]

This work highlights the influence of surface properties, on the characteristics of InAlN/GaN based high electron mobility transistor (HEMT) structures grown on the SiC substrate by metalorganic vapor phase epitaxy. The growth parameters, i.e., reactor pressure and V/III ratio were tuned to improve the morphological and two-dimensional electron gas (2DEG) characteristics of the HEMT structure. It was found that V/III ratio plays a significant role in improving surface morphology and 2DEG properties without altering average indium composition. It was also found that 2DEG properties are highly sensitive to surface morphology and its features. The step flow smooth surface morphology with very low surface and interface roughness was observed in optimized lattice-matched InAlN/GaN HEMT structures. The sheet resistance of ∼170 Ω/sq with good 2DEG concentration (∼2.4 × 1013 cm−2) and 2DEG mobility (∼1500 cm2/V s) was achieved in the optimized lattice-matched InAlN/GaN HEMT structure. A comparison between different barrier-based HEMT structures, i.e., lattice-matched InAlN/GaN and strained AlGaN/GaN, was also discussed. Their structural, electrical, morphological, and interfacial characteristics were compared. [ABSTRACT FROM AUTHOR]

Surface morphology is a key factor that determines the quality of laser-based micromachining processes. However, the governing laws of surface morphology in the laser processing process are yet to be clarified, and optimization of processing parameters has to rely on trial and error. Specifically, under multiple-pulse irradiation, it has been difficult to quantify the evolution of the surface morphology because the surface morphology changes with each pulse irradiation, and the ablation process changes accordingly. In this study, we investigated the evolution of surface morphology under femtosecond laser irradiation. Copper and silicon were used as targets, whose surface morphology changes exhibited seemingly opposite behaviors with respect to fluence. Using thousands of datasets, we obtained an evolution equation for surface morphology in terms of surface area, which acts as a good probe of the residual surface energy after ablation. Our model successfully quantifies the cumulative effect of multiple-pulse irradiation on surface morphology changes. [ABSTRACT FROM AUTHOR]

Complex material surfaces can reduce secondary electron emission (SEE) and sputtering via geometric trapping. In this work, the SEE yields for a range of open-cell reticulated carbon foam geometries are characterized using scanning electron microscopy. The total reduction in the SEE yield from carbon foams with a 3% volume fill density and 10–100 pores per inch (PPI) is shown to be between 23.5% and 35.0%. Contributions of a foam backplate are assessed by experimentally and analytically defining the critical parameter, transparency. The transparency of a foam is quantified and is shown to affect the primary electron angular dependence on the SEE yield. For the same thickness of 6 mm, it is found that higher PPI decreases foam transparency from 32% to 0% and reduces the SEE yield. The SEE yield from carbon foams is also shown to have weaker dependence on the morphology of the surface compared with fuzzes and velvets and less variation across individual sample surfaces due to the rigidity of their ligament structures and isotropic geometries. [ABSTRACT FROM AUTHOR]

β-Ga2O3 is a promising ultra-wide bandgap semiconductor with melt-grown substrates that are scalable, particularly in the (001) orientation. In this study, we report on the heated-phosphoric acid etching of (001) β-Ga2O3. A wagon wheel pattern with spokes aligned to a range of specific crystallographic directions was fabricated on (001) β-Ga2O3. At 160 °C, the (001) etch rate was 1.47 μm/h, which is comparable to etch rates obtained via dry etch techniques. The etched (001) surface had a morphology that was smoother than an inductively coupled plasma etched surface. All spokes possessed relatively smooth sidewalls. Spokes oriented along the [100] direction exhibited minimal SiO2 mask undercut rates at lower etch temperatures and symmetric trapezoidal profiles with near vertical (010)-like sidewalls, which are ideal for device structures with a trench geometry. Spokes oriented along the [010] direction exhibited significant SiO2 mask undercut rates and asymmetric trapezoidal profiles with different sidewall angles. These spokes also possessed reduced sidewall angles, which is favorable for field management at device corners and edges. The etch process was used to realize a dense array of [100]-oriented trenches with a height of 1.5 μm, a base width of 2.0 μm, and a mask width of 0.8 μm. The work highlights the potential for ion damage-free, standalone heated-H3PO4 etching as a viable alternative to the dry etching of (001) β-Ga2O3 for high-performance device applications. [ABSTRACT FROM AUTHOR]

β-Ga2O3 is a promising ultra-wide bandgap semiconductor with melt-grown substrates that are scalable, particularly in the (001) orientation. In this study, we report on the heated-phosphoric acid etching of (001) β-Ga2O3. A wagon wheel pattern with spokes aligned to a range of specific crystallographic directions was fabricated on (001) β-Ga2O3. At 160 °C, the (001) etch rate was 1.47 μm/h, which is comparable to etch rates obtained via dry etch techniques. The etched (001) surface had a morphology that was smoother than an inductively coupled plasma etched surface. All spokes possessed relatively smooth sidewalls. Spokes oriented along the [100] direction exhibited minimal SiO2 mask undercut rates at lower etch temperatures and symmetric trapezoidal profiles with near vertical (010)-like sidewalls, which are ideal for device structures with a trench geometry. Spokes oriented along the [010] direction exhibited significant SiO2 mask undercut rates and asymmetric trapezoidal profiles with different sidewall angles. These spokes also possessed reduced sidewall angles, which is favorable for field management at device corners and edges. The etch process was used to realize a dense array of [100]-oriented trenches with a height of 1.5 μm, a base width of 2.0 μm, and a mask width of 0.8 μm. The work highlights the potential for ion damage-free, standalone heated-H3PO4 etching as a viable alternative to the dry etching of (001) β-Ga2O3 for high-performance device applications. [ABSTRACT FROM AUTHOR]

The development of high performance wide-bandgap AlGaN channel transistors with high current densities and reduced Ohmic losses necessitates extremely highly doped, high Al content AlGaN epilayers for regrown source/drain contact regions. In this work, we demonstrate the achievement of semi-metallic conductivity in silicon (Si) doped N-polar Al0.6Ga0.4N grown on C-face 4H-SiC substrates by molecular beam epitaxy. Under optimized conditions, the AlGaN epilayer shows smooth surface morphology and a narrow photoluminescence spectral linewidth, without the presence of any secondary peaks. A favorable growth window is identified wherein the free electron concentration reaches as high as ∼1.8 × 1020 cm−3 as obtained from Hall measurements, with a high mobility of 34 cm2/V·s, leading to a room temperature resistivity of only 1 mΩ·cm. Temperature-dependent Hall measurements show that the electron concentration, mobility, and sheet resistance do not depend on temperature, clearly indicating dopant Mott transition to a semi-metallic state, wherein the activation energy (Ea) falls to 0 meV at this high value of Si doping for the AlGaN films. This achievement of semi-metallic conductivity in Si doped N-polar high Al content AlGaN is instrumental for advancing ultrawide bandgap electronic and optoelectronic devices. [ABSTRACT FROM AUTHOR]

Influence of the barrier layer on the electrical properties of V/Al-based Ohmic contact is investigated by comparing the surface morphology and alloying results of V/Al/Ni/Au (with barrier Ni) and V/Al/Cr/Au (with barrier Cr) contacts on n-AlGaN (Al molar fraction>60%) after 850 °C annealing. Due to the clustering of Ni during annealing, a thin Al layer (AlOx) and a number of Al-Au alloy clusters are formed at the contact interface of n-AlGaN, which increases the contact resistance of the V/Al/Ni/Au Ohmic contacts. In contrast, the annealed V/Al/Cr/Au electrodes cover the surface uniformly, which not only contributes to the increased contact area, but also suppresses the formation of high resistance products. Thanks to the Cr barrier layer, the specific contact resistivity of V/Al-based Ohmic contact is reduced by 26%. [ABSTRACT FROM AUTHOR]

We find the spatially averaged sputter yield Y ¯ analytically for non-planar surfaces that have slowly varying surface heights h = h (x , y). To begin, nonlocal effects like redeposition of sputtered material and secondary sputtering are neglected. We show that the leading order corrections to Y ¯ are proportional to the spatial averages of (∂ h / ∂ x) 2 and (∂ h / ∂ y) 2. The constants of proportionality can be written in terms of the first and second derivatives of the sputter yield of a flat surface with respect to the ion incidence angle θ. For a range of θ values, Y ¯ is a decreasing function of the amplitude of the surface texture. We also determine how the contribution of redeposition to Y ¯ depends on the amplitude and characteristic lateral length scale of the surface morphology. As a test of our theory and to quantify the roles of redeposition and secondary sputtering, we performed Monte Carlo simulations of sputtering from Si targets with sinusoidal surfaces by 1 keV Ar + ions. The theory agrees remarkably well with our Monte Carlo simulations. Our simulations also lead to the notable result that atoms that are sputtered and then strike the surface can themselves cause significant sputtering. [ABSTRACT FROM AUTHOR]

We present the first report on the structural, magnetic, and transport properties of epitaxial thin films of equiatomic quaternary CoFeCrGa, grown on a single crystal MgO(001) substrate. From the structure and surface morphology analyses, we have shown that the films grown are ordered, epitaxial, and homogeneous. Magnetic measurements confirm the soft ferromagnetic nature of the film along the in-plane direction with a coercivity of 4.6 Oe. The resistivity measurements indicate semiconducting nature with a very low temperature coefficient of resistivity (TCR) value, suggesting an almost temperature independent resistivity, similar to other reported spin-gapless semiconductors (SGSs) among the Heusler alloys. A non-saturating, quantum linear magnetoresistance is observed even in high fields of up to 12 kOe, another prerequisite for gapless materials. Hall measurements are also performed, and a detailed analysis has been carried out to estimate the ordinary and anomalous Hall contributions. The conductivity value (σ x x ) at 300 K is found to be 4280 S cm − 1 , which is comparable with the other reported SGS materials. We have also studied the effect of L2 1 and B2 type disorder on the electronic properties based on the first principle calculations and found that the SGS nature in CoFeCrGa is quite robust against the Co–Fe swap disorder (L2 1 disorder); however, with swap disorder (≥ 25 %) between Cr and Ga sites, the system transits from SGS to half-metallic state. All these results indicate the possibility of spin-gapless semiconducting nature in the CoFeCrGa film, making it highly suitable for spin-based device applications. [ABSTRACT FROM AUTHOR]

Growth of wurtzite ScxAl1−xN (x < 0.23) by plasma-assisted molecular-beam epitaxy on c-plane GaN at high temperatures significantly alters the extracted lattice constants of the material due to defects likely associated with remnant phases. In contrast, ScAlN grown below a composition-dependent threshold temperature exhibits uniform alloy distribution, reduced defect density, and atomic-step surface morphology. The c-plane lattice constant of this low-temperature ScAlN varies with composition as expected from previous theoretical calculations and can be used to reliably estimate alloy composition. Moreover, lattice-matched Sc0.18Al0.82N/GaN multi-quantum wells grown under these conditions display strong and narrow near-infrared intersubband absorption lines that confirm advantageous optical and electronic properties. [ABSTRACT FROM AUTHOR]

The direct impact of structural quality on the ferroelectric properties of hexagonal Al1–xScxN with an Sc-content of x = 0.3 was investigated using dynamic hysteresis measurements, high-resolution x-ray diffraction (HRXRD), and atomic force microscopy. The films investigated were deposited on p-doped (001)-Si substrates by reactive pulsed DC magnetron sputtering under different gas mixtures to vary the structural quality and surface morphology between samples. Misoriented grains were identified as ferroelectrically inactive, as these grains resulted in an underestimation and distortion of the ferroelectric quantities. In fact, a high amount of misoriented volume was found to have a significant effect on the coercive electric field, as this is mainly determined by the crystal strain in the ferroelectric [0001]-oriented regions, independent of its origin. Furthermore, it was concluded that the crystal quality does not have a pronounced effect on the coercive field strength. Conversely, the polarization in the film is mainly determined by the crystal quality, as a difference of 1° in the HRXRD FWHM of the ω-scan resulted in a 60% loss of polarization. The amount of polarization was influenced to a lesser extent by the misoriented grains since the ferroelectric volume of the layers was only slightly overestimated. This reveals that optimizing reproducible and transferable properties, such as crystal quality and surface morphology, is more reasonable, as the film with the lowest misoriented volume and the highest degree of c-axis orientation showed the highest polarization. [ABSTRACT FROM AUTHOR]

A Michelson interferometer is commonly used for evaluating the morphology of a cell. However, the interference imaging with reference and object beams is easily affected by external vibrations and environmental disturbances, leading to unstable interference patterns. In this paper, the three-dimensional surface morphology of the biological cell is evaluated by a new quantitative phase imaging method, which couples Michelson-like lateral shear interferometric microscopy with self-referencing numerical phase calibration. The Michelson-like lateral shear interferometric microscopy is constructed by replacing the two plane mirrors of the traditional Michelson interferometer with two common right-angle prisms and generates interference fringe patterns. The lateral shear is created and freely adjustable by simply translating/or rotating one right-angle prism. To calculate the phase information of the biological cells quantitatively, the classical Fourier transform method is used to process the recorded interferogram, and then the self-referencing numerical phase calibration method is utilized for acquiring accurate phase information. Successfully achieving quantitative phase imaging of a cell verifies the feasibility and practicability of the proposed method. [ABSTRACT FROM AUTHOR]

The effects of substrate choice, substrate temperature, Se/In flux ratio, and cooling rate after deposition on the phase composition, surface morphology, and stoichiometry of indium selenide films synthesized via molecular beam epitaxy are presented. In2Se3 films were synthesized on sapphire, Si(111) and highly oriented, pyrolytic graphite (HOPG) substrates. The phase composition, stoichiometry, and surface morphology of the films were characterized via Raman spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscopy, respectively. Higher substrate temperature combined with higher Se/In ratio promoted formation of β-In2Se3 over γ and/or κ-In2Se3 on all substrates. Higher Se/In ratio also independently promoted β-In2Se3 over γ and/or κ-In2Se3 on all substrates at 673 K. The lateral dimensions of In2Se3 flakes increased as the substrate temperature increased on all substrates, and the largest lateral dimensions were observed for β-In2Se3 flakes on HOPG at 973 K. No evidence of α-In2Se3 was observed in the Raman spectra of any of the films at any of the synthesis conditions in this study. β-In2Se3 films on HOPG were cooled at 1200, 120, and 12 K/h and no evidence of a β to α-In2Se3 phase transition was observed. Some evidence of β to α-In2Se3 phase transition was observed in temperature-dependent XRD of In2Se3 powders, suggesting that another parameter besides cooling rate is locking the In2Se3 films into the β-phase. [ABSTRACT FROM AUTHOR]

We investigate the surface morphologies of two series of homoepitaxial GaSb(100) thin films grown on GaSb(100) substrates by molecular beam epitaxy in a Veeco GENxplor system. The first series was grown at temperatures ranging from 290 to 490 ° C and serves as a control. The second series was grown using the same growth parameters with bismuth used as a surfactant during growth. We compared the two series to examine the impacts of bismuth over the range of growth temperatures on the GaSb surface morphologies using atomic force microscopy and the film properties using Raman spectroscopy and scanning electron microscopy. High-resolution x-ray diffraction was performed to confirm that bismuth was not incorporated into the films. We found that the morphological evolution of the GaSb series grown without bismuth is consistent with the standard surface nucleation theory and identified the 2D-3D transition temperature as close to 290 ° C. In contrast, the presence of a Bi surfactant during growth was found to significantly alter the surface morphology and prevent undesired 3D islands at low temperatures. We also observed a preference for hillocks over step morphology at high growth temperatures, antistep bunching effects at intermediate temperatures, and the evolution from step-meandering to mound morphologies at low temperatures. This morphological divergence from the first series indicates that bismuth significantly increases in the 2D Erlich–Schwöebel potential barrier of the atomic terraces, inducing an uphill adatom flux that can smoothen the surface. Our findings demonstrate that bismuth surfactant can improve the surface morphology and film structure of low-temperature grown GaSb. Bismuth surfactant may also improve other homoepitaxial III-V systems grown in nonideal conditions. [ABSTRACT FROM AUTHOR]

Crystalline thin films of LiGa5O8 have recently been realized through epitaxial growth via mist-chemical vapor deposition. The single crystal, spinel cubic LiGa5O8 films show promising fundamental material properties and, therefore, make LiGa5O8 a potential enabling material for power electronics. In this work, chemical resistance and etch susceptibility were investigated for the first time on crystalline LiGa5O8 thin films with various wet chemistries. It was found that LiGa5O8 is very chemically resistive to acid solutions, with no apparent etching effects observed when placed in concentrated acid solutions of HCl, H2SO4, HF, or H3PO4 at room temperature. In contrast, orthorhombic (010) LiGaO2 shows effective etching in HCl solutions at varying dilution concentrations, with etch rates measured between 8.6 [1000:1 (DI water: HCl concentration)] and 6092 nm/min (37 wt. % HCl). The inductively coupled plasma reactive ion etching (ICP-RIE) of LiGa5O8 using BCl3/Ar and CF4/Ar/O2 gas chemistries was investigated. The etching rate and surface morphology of etched surfaces were examined as a function of RIE and ICP power. Using a CF4/Ar/O2 gas chemistry with an RIE power of 75 W and an ICP power of 300 W resulted in smooth etched planar surfaces while maintaining an etch rate of ∼24.6 nm/min. Similar dry etching studies were performed for LiGaO2. It was found that the BCl3/Ar gas chemistry was better suited for LiGaO2 etching, with similar surface morphology quality being obtained after etching as prior etching when a RIE power of 15 W and an ICP power of 400 W is utilized. [ABSTRACT FROM AUTHOR]

In this study, a three-dimensional compound droplet collision numerical model is established by using volume of fluid. The morphological evolution of compound hollow droplets affected by high-speed solid droplet was studied in detail. Parameterized analysis is conducted on the velocity VS, center distance ϕ , and diameter ζ of high-speed small droplets. Through the analysis of the compound droplets flow field, it is found that the broken mode of compound droplets is caused by the increase in Pn (dimensionless pressure) and θ (velocity angle). The results show that the surface Pn of compound droplets is positively correlated with the velocity VS of high-speed small droplets, while there is a more complex relationship with the dimensionless center distance ϕ and dimensionless diameter ζ. When the values of ϕ and ζ are appropriate, Pn can reach its maximum value. The broken mode of compound droplets can be divided into three categories: shear deformation, shear crushing, and violent crushing. [ABSTRACT FROM AUTHOR]

This study reports on the formation of self-organized silicon (Si) nanostructures by 75 eV helium (He) plasma irradiation at normal incidence without the presence of impurities. In contrast to the featureless surface after normal incidence argon (Ar) ion beam irradiation without the co-deposition of impurities, the Si surface exhibits the development of faceted nanostructures under 75 eV He plasma irradiation. The faceted structures are interspersed with valleys that extend in two orthogonal directions, imparting a mountain-like morphology to the surface. Our investigation verifies that the He bubbles align themselves along the direction perpendicular to the surface underneath these valleys. Furthermore, the presence of He bubbles induces distortion in the surface layer and leads to the formation of an amorphous Si layer. The underlying mechanism driving this surface evolution could be attributed to the instability induced by the presence of He bubbles. [ABSTRACT FROM AUTHOR]

Electrochemical processing, due to its unique material removal mechanism compared to mechanical processing, often results in significantly different micro-morphologies. It is widely used in areas such as aerospace component processing, surface finishing, passivation, micro-structure mold processing, etc. The complexity of alloy steel composition makes uniform etching difficult to achieve, and the post-etch micro-morphology is also complex, making it challenging to describe and analyze. Therefore, it is difficult to analyze the surface morphology of electrochemical etching under different parameters. In this study, a self-developed electrochemical etching device with adjustable DC voltage, pulse width voltage, and pulse width positive and negative voltage output was used. Different parameters of pulse voltage were used to etch the surface of 42CrMo alloy steel. Due to the strong relationship between surface roughness parameters and the chosen measurement scale, as well as the surface morphology and waviness errors introduced by specimen preparation and etching processes, a wavelet filtering method was used to remove the low frequency components in the surface morphology, and only the surface roughness part was retained for fractal parameter calculation and analysis. The research showed that fractal analysis can also be applied to analyze the surface morphology after electrochemical etching. Pulse voltages with characteristic voltages, characteristic pulse frequencies, and duty ratios can achieve better surface quality during positive pulse etching. Positive and negative pulse etching can obtain better surface morphology than positive pulse etching, but the etching amount is lower, making it suitable for precision finishing. [ABSTRACT FROM AUTHOR]

We experimentally investigate microliter-sized water droplet impact on solid and hollow square micropillared polydimethylsiloxane substrates. Micropillared substrates with different values of pitch (34, 47, and 62 μm) and hole sizes (0, 3, 6, and 10 μm) of pillars are fabricated using soft lithography following direct laser writer maskless photolithography. We observe that hollow micropillared substrates exhibit increased hydrophobicity as compared to the solid micropillared substrates. Interestingly, we find that hydrophobicity is further enhanced as the hole size is increased. To understand the impact dynamics, we perform high-speed visualization to acquire the transient evolution of the impacting droplets. Based on the impact velocity (0.22–0.62 m/s), pitch, and hole size, we identify various regimes, namely, non-bouncing, partial bouncing, and complete bouncing. At a given impact velocity and pitch value, non-bouncing and bouncing regimes are observed for solid and hollow micropillared substrates, respectively. We find that the hollow micropillared substrate exhibits higher values for capillary pressure, impalement pressure, and the energy barrier associated with the Cassie–Baxter to Wenzel transition toward the impacting droplets. This is due to a decrease in the solid fraction owing to the incorporation of circular holes in pillars. The analysis shows the energy loss due to viscous dissipation decreases with an increase in hole size, which enhances the bouncing fate possibility. The fundamental insights gained from this study can be effectively leveraged by modulating the surface morphology to realize the desired droplet impact characteristics for various potential applications such as self-cleaning and energy harvesting. [ABSTRACT FROM AUTHOR]

The degradation of fluoroelastomer, perfluoroelastomer (FFKM), and fluorosilicone materials were compared between three O2/Ar plasma conditions: full plasma (ions plus radicals), radical only, and ion only. These elastomer materials are used extensively in plasma processing equipment used to manufacture semiconductors, and understanding the plasma environments that enhance degradation will inform material choice and further material development. Langmuir probe measurements were made to quantify the electron temperature and plasma density; radical probe measurements were made to quantify the oxygen radical density. The results suggested that plasma radicals were required to drive significant mass loss rates, with ions speeding up the mass loss rate further in the full plasma case. Additionally, it was determined that plasma radicals were the main driver of surface changes of the elastomer, with similar surface roughening in plasma versus radical only conditions and less significant roughening in ion-only conditions. The O2/Ar plasma discharge had an electron temperature of 4.6 ± 0.1 eV and a plasma density of 2.9 ± 0.07 × 1016 m−3. It was observed that the fluorosilicone material had the lowest mass loss rate, the unfilled FFKM had the highest mass loss rate, and the silica-filled FFKM had the lowest mass loss rate among the FFKMs tested. The presence of oxygen radicals during exposure conditions significantly changed surface roughness. [ABSTRACT FROM AUTHOR]

Due to the lack of research on the microscopic evolution process and the formation of step growth patterns for SiC crystals, it is of great importance to deepen the understanding of the epitaxial growth of a SiC vicinal surface from a microscopic point of view. In this study, a three-dimensional lattice kinetic Monte Carlo algorithm was used to study the step flow growth characteristics of SiC crystals. The microscopic evolution of the step flow growth patterns for SiC vicinal surfaces was shown. C and Si were treated as the basic particles, and the net deposition and diffusion of atoms were considered in this model. The periodic boundary conditions were applied along the step edge and the helical boundary conditions were applied in the direction perpendicular to the step. The surface morphology evolution of SiC crystals grown on step substrates was simulated at different growth temperatures, partial deposition fluxes, and terrace widths. The results indicated that the growth patterns of the SiC vicinal surface could be transformed from a step flow growth to a nucleation growth pattern by decreasing the growth temperature, increasing the deposition flux, and increasing the terrace width. [ABSTRACT FROM AUTHOR]