Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE.

We report about metalorganic vapor phase epitaxy of smooth nitrogen-polar AlN templates on vicinal (0001) sapphire substrates. The influence of the V/III ratio, growth temperature, growth rate, as well as sapphire-nitridation time and temperature, were studied. With 4° offcut sapphire, step-flow growth was possible only with V/III ratios below 2. However, the optimal V/III ratio required precise adjustment, possibly dependent on reactor history and geometry. A rather narrow temperature window of less than 40 °C existed for smooth surface morphology. Reducing the temperature affected adatom mobility, eventually disrupting step-flow growth; increasing the temperature favored the formation of high-aspect-ratio defects on the epilayer. A low thermal-budget nitridation step with a short nitridation time of 15 s proved to be effective in controlling polarity without inducing excessive surface damage on the sapphire substrate. The growth rate also influenced surface morphology, with an increase in RMS roughness and step-bunching for faster growths until at growth rates above 1.4 μm/h step-flow growth could no longer occur. Finally, we developed a V/III ratio fine-tuning procedure, whereby the reactor-specific value that induces optimal growth is inferred by growth-rate variations. With this method, N-polar AlN templates with sub-nanometer RMS roughness were demonstrated for both 4° and 2° offcut sapphire substrates. [ABSTRACT FROM AUTHOR]